片上电感介绍

1射频集成电路片上无源电感的设计作者：信息科学与工程学院微电子学系杨康指导教师：信息科学与工程学院微电子学系闫娜摘要：高性能射频集成电路是新一代移动通信技术的核心技术，片上无源电感又是射频集成电路中极其重要的无源器件。近年来，片上无源电感的设计、优化及建模成为射频集成电路设计领域的热门课题。但sub-nH数量级的片上电感的分析与设计还缺乏全面性的系统研究。本文的主要目的就是针对电感值为sub-nH范围的片上无源电感进行研究，通过计算机仿真及流片测试深入研究片上螺旋电感，并总结了无源电感的仿真、设计、测试流程。本文采用0.13μmCMOS工艺对设计结果进了流片验证，并提出了片上无源电感的设计准则。本文创新性地提出了一种基于电感物理特性的集总参数模型。仿真表明，该模型精度高，可在50MHz~40GHz的宽带范围内实现快速拟合，该模型可应用于射频集成电路的设计和优化。关键字：电感，sub-nH,射频集成电路，在片测试，模型，电磁场Abstract:High-performanceradiofrequencyintegratedcircuit(RFIC)iscoretechnologyfornewgenerationmobiletelecommunication,andon-chippassiveinductorisoneofthemostimportantpassivedevicesinRFICdesign.Thedesign,optimizationandmodelingofon-chippassiveinductorshavebeentheattractiveresearchtopicsinRFICdesignrecently.Thisthesisfocusesonsub-nHon-chipinductorsandproposesadetailedprocesstosimulate,designandtesttheon-chipinductors.Somesub-nHinductorsaretapedoutin0.13μmCMOSprocess.Thisthesisalsoproposesanewphysical-basedlumped-parametermodelforon-chipinductors.SimulationresultsindicatethattheproposedmodeldemonstratesagoodagreementwithS-parameterfromelectromagneticfieldsimulatorwithin50MHz~40GHz.ItisnotablethatthisnewmodelcanbewelladoptedinRFICdesigns.Keywords:inductor,sub-nH,radiofrequencyintegratedcircuit(RFIC),on-chiptesting,model,electromagneticfield2目录第一章引言....................................................................................................................................31.1研究背景...........................................................................................................................31.2片上电感的作用...............................................................................................................31.3国内外研究进展...............................................................................................................31.4本文的贡献.......................................................................................................................4第二章片上电感的特性分析.........................................................................................................42.1片上电感的工艺参数........................................................................................................42.2片上电感的几何参数........................................................................................................52.3电感值的计算...................................................................................................................62.3.1修正的Wheeler表达式.........................................................................................62.3.2.基于均匀电流薄层近似的表达式........................................................................72.4直流感值计算结果............................................................................................................72.4.1外直径dout与电感值的关系.................................................................................72.4.2线圈的圈数n与电感值的关系..............................................................................82.4.3金属的线宽度w与电感值的关系.........................................................................82.4.4相临金属的间距s与电感值的关系......................................................................92.4.5直流感值计算小结.................................................................................................9第三章片上电感的设计...............................................................................................................103.1片上螺旋电感的电磁场仿真..........................................................................................103.2片上电感的设计流程......................................................................................................113.3本文的设计结果.............................................................................................................143.4仿真结果.........................................................................................................................163.4.1电感内半径R对片上电感的影响......................................................................163.4.2电感线圈圈数n对片上电感的影响...................................................................173.4.3电感金属的线宽度w对片上电感的影响..........................................................193.4.4电感相临金属的间距s改变对片上电感的影响...............................................203.5仿真结果总结.................................................................................................................22第四章测试..................................................................................................................................224.1在片测试.........................................................................................................................224.2测试平台.........................................................................................................................244.3测试结果.........................................................................................................................254.3.1开路结构和短路结构测试结果............................................................................254.3.2片上电感测试结果...............................................................................................254.3.3不同几何