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1MotorolaOptoelectronicsDeviceData The4N35,4N36and4N37devicesconsistofagalliumarsenideinfraredemittingdiodeopticallycoupledtoamonolithicsiliconphototransistordetector.•CurrentTransferRatio—100%Minimum@SpecifiedConditions•GuaranteedSwitchingSpeeds•MeetsorExceedsallJEDECRegisteredSpecifications•ToorderdevicesthataretestedandmarkedperVDE0884requirements,thesuffix”V”mustbeincludedatendofpartnumber.VDE0884isatestoption.Applications•GeneralPurposeSwitchingCircuits•Interfacingandcouplingsystemsofdifferentpotentialsandimpedances•RegulationFeedbackCircuits•Monitor&DetectionCircuits•SolidStateRelaysMAXIMUMRATINGS(TA=25°Cunlessotherwisenoted)RatingSymbolValueUnitINPUTLEDReverseVoltageVR6VoltsForwardCurrent—ContinuousIF60mALEDPowerDissipation@TA=25°CwithNegligiblePowerinOutputDetectorDerateabove25°CPD1201.41mWmW/°COUTPUTTRANSISTORCollector–EmitterVoltageVCEO30VoltsEmitter–BaseVoltageVEBO7VoltsCollector–BaseVoltageVCBO70VoltsCollectorCurrent—ContinuousIC150mADetectorPowerDissipation@TA=25°CwithNegligiblePowerinInputLEDDerateabove25°CPD1501.76mWmW/°CTOTALDEVICEIsolationSourceVoltage(1)(PeakacVoltage,60Hz,1secDuration)VISO7500Vac(pk)TotalDevicePowerDissipation@TA=25°CDerateabove25°CPD2502.94mWmW/°CAmbientOperatingTemperatureRange(2)TA–55to+100°CStorageTemperatureRange(2)Tstg–55to+150°CSolderingTemperature(10sec,1/16″fromcase)TL260°C1.Isolationsurgevoltageisaninternaldevicedielectricbreakdownrating.1.Forthistest,Pins1and2arecommon,andPins4,5and6arecommon.2.RefertoQualityandReliabilitySectioninOptoDataBookforinformationontestconditions.PreferreddevicesareMotorolarecommendedchoicesforfutureuseandbestoverallvalue.GlobalOptoisolatorisatrademarkofMotorola,Inc.Orderthisdocumentby4N35/D SEMICONDUCTORTECHNICALDATAGlobalOptoisolatorMotorola,Inc.1995 *MotorolaPreferredDevice SCHEMATICPIN1.LEDANODE2.LEDCATHODE3.N.C.4.EMITTER5.COLLECTOR6.BASE[CTR=100%Min]STANDARDTHRUHOLECASE730A–04STYLE1PLASTIC12365461REV2 2MotorolaOptoelectronicsDeviceDataELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)(1)CharacteristicSymbolMinTyp(1)MaxUnitINPUTLEDForwardVoltage(IF=10mA)TA=25°CTA=–55°CTA=100°CVF0.80.90.71.151.31.051.51.71.4VReverseLeakageCurrent(VR=6V)IR——10μACapacitance(V=0V,f=1MHz)CJ—18—pFOUTPUTTRANSISTORCollector–EmitterDarkCurrent(VCE=10V,TA=25°C)Collector–EmitterDarkCurrent(VCE=30V,TA=100°C)ICEO——1—50500nAμACollector–BaseDarkCurrent(VCB=10V)TA=25°CTA=100°CICBO—0.210020—nACollector–EmitterBreakdownVoltage(IC=1mA)V(BR)CEO3045—VCollector–BaseBreakdownVoltage(IC=100μA)V(BR)CBO70100—VEmitter–BaseBreakdownVoltage(IE=100μA)V(BR)EBO77.8—VDCCurrentGain(IC=2mA,VCE=5V)hFE—400——Collector–EmitterCapacitance(f=1MHz,VCE=0)CCE—7—pFCollector–BaseCapacitance(f=1MHz,VCB=0)CCB—19—pFEmitter–BaseCapacitance(f=1MHz,VEB=0)CEB—9—pFCOUPLEDOutputCollectorCurrentTA=25°C(IF=10mA,VCE=10V)TA=–55°CTA=100°CIC(CTR)(2)10(100)4(40)4(40)30(300)—————mA(%)Collector–EmitterSaturationVoltage(IC=0.5mA,IF=10mA)VCE(sat)—0.140.3VTurn–OnTime(IC=2mA,VCC=10V,RL=100Ω)(3)ton—7.510μsTurn–OffTime(IC=2mA,VCC=10V,RL=100Ω)(3)toff—5.710RiseTime(IC=2mA,VCC=10V,RL=100Ω)(3)tr—3.2—FallTimetf—4.7—IsolationVoltage(f=60Hz,t=1sec)VISO7500——Vac(pk)IsolationCurrent(4)(VI–O=3550Vpk)4N35IsolationCurrent(VI–O=2500Vpk)4N36IsolationCurrent(VI–O=1500Vpk)4N37IISO—————8100100100μAIsolationResistance(V=500V)(4)RISO1011——ΩIsolationCapacitance(V=0V,f=1MHz)(4)CISO—0.22pF1.Alwaysdesigntothespecifiedminimum/maximumelectricallimits(whereapplicable).2.CurrentTransferRatio(CTR)=IC/IFx100%.3.Fortestcircuitsetupandwaveforms,refertoFigure11.4.Forthistest,Pins1and2arecommon,andPins4,5and6arecommon. 3MotorolaOptoelectronicsDeviceDataIC,OUTPUTCOLLECTORCURRENT(NORMALIZED)TYPICALCHARACTERISTICSFigure1.LEDForwardVoltageversusForwardCurrent21.81.61.41.2111010010001010.10.010.51IF,LEDFORWARDCURRENT(mA)25102050IF,LEDINPUTCURRENT(mA)VF,FORWARDVOLTAGE(VOLTS)25°C100°CTA=–55°CNORMALIZEDTO:IF=10mAFigure2.OutputCurrentversusInputCurrentPULSEONLYPULSEORDC1075210.70.50.20.1–60–40–20020406080100TA,AMBIENTTEMPERATURE(°C)1101000.1020406080100TA,AMBIENTTEMPERATURE(°C)t,TIME(s)I1005020105210.10.20.5125102050100IF,LEDINPUTCURRENT(mA)CEO,COLLECTOR–EMITTERDARKCURRENT(NORMALIZED)μNORMALIZEDTO:VCE=10VTA=25°CVCE=30V10VtftrtrtfIF=10mA0VCE,COLLECTOR–EMITTERVOLTAGE(VOLTS)IC,COLLECTORCURRENT(mA)4812162024285mA2mA1mA012345678910Figure3.CollectorCurrentversusCollector–EmitterVoltageFigure4.OutputCurrentversusAmbientTemperatureFigure5.DarkCurrentversusAmbientTemperatureFigure6.RiseandFallTimes(TypicalValues)RL=100{RL=1000{NORMALIZEDTOTA=25°CVCC=10VIC,OUTPUTCOLLECTORCURRENT(NORMALIZED) 4MotorolaOptoelectronicsDeviceData1007050201075210.10.20.50.7125710205070100IF,LEDINPUTCURRENT(mA)RL=1000100101007050201075210.10.20.50.7125710205070100IF,LEDINPUTCURRENT(mA)RL=1000100Figure7.Turn–OnSwitchingTimesFigure8.Turn–OffSwitchingTimes10VCC=10VVCC=10V,TURN–OFFTIME(s)toffμ,TURN–ONTIME(s)tonμC,CAPACITANCE(pF)Figure9.DCCurrentGain(DetectorOnly)Figure10.CapacitancesversusVoltage2018161