RENA presentation Advanced front grid metallisatio

AdvancedFrontGridMetallisationByMeansOfLaserChemicalProcessingAndPlatingDr.HartmutNussbaumer,ErnstHartmannsgruber,Dr.DanielKrayShanghai8.5.2010ConfidentialOutline•Limitationsofcurrenttechnology•Resolvingthelimitations•RENASelectDopLCPandRENAInCellPlate•Results•Outlook•ConclusionShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesLimitationsofcurrenttechnologyp-base~120µmScreen-printedcontactsHomogenous~55Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~17.5%*η~17.5%**mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesLimitationsofcurrenttechnologyp-base~120µmScreen-printedcontactsHomogenous~55Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~17.5%*η~17.5%*•Lowblueresponse
lowJsc•Highrecombination
lowVoc•Lowblueresponse
lowJsc•Highrecombination
lowVoc*mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesLimitationsofcurrenttechnologyp-base~120µmScreen-printedcontactsHomogenous~55Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~17.5%*η~17.5%*•Highshading
lowJsc•Lowconductivity
lowFF•Highshading
lowJsc•Lowconductivity
lowFF*mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesLimitationsofcurrenttechnologyp-base~120µmScreen-printedcontactsHomogenous~55Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~17.5%*η~17.5%*•Lowreflectivity
lowJsc•Highrecombination
lowVoc•Lowreflectivity
lowJsc•Highrecombination
lowVoc*mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialOutline•Limitationsofcurrenttechnology•Resolvingthelimitations•RENASelectDopLCPandRENAInCellPlate•Results•Outlook•ConclusionShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesResolvingthelimitationsin2stepsp-base~120µmScreen-printedcontactsHomogenous~55Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~17.5%*η~17.5%**mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesResolvingthelimitationsin2stepsStep1:Selectiveemitterp-base~120µmScreen-printedcontacts~120Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~18%*η~18%*~20Ohm/sqemitter•Higherblueresponse
higherJsc•Lowerfrontrecombination
higherVoc•Higherblueresponse
higherJsc•Lowerfrontrecombination
higherVoc*mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialRoadmaptohigherefficienciesResolvingthelimitationsin2stepsStep2:Selectiveemitter+platedcontactsp-basePlatedcontacts~120Ohm/sqemitterFull-arearearcontactandBSF~180-200µmη~19%*η~19%*~20Ohm/sqemitter•Lowershading
higherJsc•Lowergridresistance
higherFF•Lowershading
higherJsc•Lowergridresistance
higherFF~40µm~40µm*mayvaryby~±0.5%absaccordingtocustomeroptimizationstatusShanghai8.5.2010ConfidentialEff.Increaseestimation:Comparisonofselectiveemitterconcepts•Others:emitteretchback,doublediffusion,…200µm•RENALCP&Plating40µm@55Ohm/sqr@80Ohm/sqr~+0,4%~+0,2%100µm50µmn+n+n++n++~+1,0%~+0,8%Shanghai8.5.2010ConfidentialOutline•Limitationsofcurrenttechnology•Resolvingthelimitations•RENASelectDopLCPandRENAInCellPlate•Results•Outlook•ConclusionShanghai8.5.2010ConfidentialProcessSequenceSelectiveEmitter+PlatingdilutedH3PO4Step2:SelfadjustedmetallisationandselectiveemitterSnCuNin++n++n+SiNStep1:SelectDopLCPSiNablationandn++dopingSelectDopLCPSelectDopLCPInCellPlateInCellPlateNi/AgNi/Cu/SnSelfalignedcontactformation!NoriskofshuntingShanghai8.5.2010ConfidentialHighEfficiencyMetallizationSelectiveEmitterFormingLaserChemicalP-DopingbySelectDopLCPn+n+n+n++n+LiquidGuidedLaserBeamSiNxAblation+LocalP-DopingSiNxCoating(1)LaserablatesSiNxandmeltsSi(2)H3PO4isdecomposedlocallyandfastliquidphasediffusionoccurs(3)Liquidjetcarriesawayanydebris(4)SiresolidifieshighlyPdopedShanghai8.5.2010ConfidentialHighEfficiencyMetallizationSelectiveEmitter+PlatedMetallizationStep2:PlatingonLCPstructuresNoFrontPrint–SelfaligningPlatingTechnologySavesonesetofprintingequipmentinthelinen+LocalhighDiffusionBacksidePrint+FiringSiSelectiveEmittern+n++n+Nin+n++n+Ni/AgPlatingAgShanghai8.5.2010ConfidentialRENASolutionsSelectiveEmitter+Ni/AgPlatingRENAprocessesforselectiveemitter+platingonSi1.step:StructuringSiNx~20-40µmandselectiven++dopingbySelectDopLCP2.step:PlatingaNi/Ag2layerstackbyInCellPlate1.Nibarrierlayer:PlatingNickellayerhomogeneouslyanddense2.Agconductivelayer:PlatingAglayerwithhighspeedandlowstressTotal~8-10min3.step:ContactFormingbyRTA⇒HighCustomerBenefit/CoONiAgSin+n++n+SelectiveEmitterShanghai8.5.2010ConfidentialProcessSequenceSelectiveEmitterbyLCP+Ni/AgPlating3.JunctionIsolation+PSGremoval4.SiNdeposition5.PrintAgrearbusbars6.PrintAlrear7.PrintAgfront8.Firing1.Texturing2.n++Diffiusion3.JunctionisolationandPSGremoval4.SiNdeposition5.PrintAgrearbusbars6.PrintAlrear8.LCP9.Plating1.Texturing2.n+Diffusion~17.5%efficiencyCZStandardProcessAdvancedProcessSE&Plating~19%efficiencyCZ7.FiringOnlyoneadditionalstepHighestperformanceduetoselfalignedn++andmetallizationtechnologyShanghai8.5.2010ConfidentialProduct