IRF9530NL中文资料

IRF9530NS/LHEXFET®PowerMOSFETPD-91523AlAdvancedProcessTechnologylSurfaceMount(IRF9530NS)lLow-profilethrough-hole(IRF9530NL)l175°COperatingTemperaturelFastSwitchinglP-ChannellFullyAvalancheRated5/13/98SDGParameterTyp.Max.UnitsRθJCJunction-to-Case–––1.9RθJAJunction-to-Ambient(PCBMounted,steady-state)**–––40ThermalResistance°C/WParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@-10V…-14ID@TC=100°CContinuousDrainCurrent,VGS@-10V…-10AIDMPulsedDrainCurrent…-56PD@TA=25°CPowerDissipation3.8WPD@TC=25°CPowerDissipation79WLinearDeratingFactor0.53W/°CVGSGate-to-SourceVoltage±20VEASSinglePulseAvalancheEnergy‚…250mJIARAvalancheCurrent-8.4AEARRepetitiveAvalancheEnergy7.9mJdv/dtPeakDiodeRecoverydv/dtƒ…-5.0V/nsTJOperatingJunctionand-55to+175TSTGStorageTemperatureRangeSolderingTemperature,for10seconds300(1.6mmfromcase)°CAbsoluteMaximumRatingsFifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications.TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinternalconnectionresistanceandcandissipateupto2.0Winatypicalsurfacemountapplication.Thethrough-holeversion(IRF9530NL)isavailableforlow-profileapplications.DescriptionVDSS=-100VRDS(on)=0.20ΩID=-14A2DPakTO-262IRF9530NS/L‚StartingTJ=25°C,L=7.0mHRG=25Ω,IAS=-8.4A.(SeeFigure12)Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.(Seefig.11)Notes:**Whenmountedon1squarePCB(FR-4orG-10Material).Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994.ƒISD≤-8.4A,di/dt≤-490A/μs,VDD≤V(BR)DSS,TJ≤175°C„Pulsewidth≤300μs;dutycycle≤2%.…UsesIRF9530NdataandtestconditionsParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrentMOSFETsymbol(BodyDiode)––––––showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)…––––––p-njunctiondiode.VSDDiodeForwardVoltage––––––-1.6VTJ=25°C,IS=-8.4A,VGS=0V„trrReverseRecoveryTime–––130190nsTJ=25°C,IF=-8.4AQrrReverseRecoveryCharge–––650970nCdi/dt=-100A/μs„…tonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)Source-DrainRatingsandCharacteristicsASDGParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage-100––––––VVGS=0V,ID=-250μAΔV(BR)DSS/ΔTJBreakdownVoltageTemp.Coefficient–––-0.11–––V/°CReferenceto25°C,ID=-1mA…RDS(on)StaticDrain-to-SourceOn-Resistance––––––0.20ΩVGS=-10V,ID=-8.4A„VGS(th)GateThresholdVoltage-2.0–––-4.0VVDS=VGS,ID=-250μAgfsForwardTransconductance3.2––––––SVDS=-50V,ID=-8.4A…––––––-25μAVDS=-100V,VGS=0V––––––-250VDS=-80V,VGS=0V,TJ=150°CGate-to-SourceForwardLeakage––––––100VGS=20VGate-to-SourceReverseLeakage––––––-100nAVGS=-20VQgTotalGateCharge––––––58ID=-8.4AQgsGate-to-SourceCharge––––––8.3nCVDS=-80VQgdGate-to-Drain(Miller)Charge––––––32VGS=-10V,SeeFig.6and13„…td(on)Turn-OnDelayTime–––15–––VDD=-50VtrRiseTime–––58–––ID=-8.4Atd(off)Turn-OffDelayTime–––45–––RG=9.1ΩtfFallTime–––46–––RD=6.2Ω,SeeFig.10„Betweenlead,––––––andcenterofdiecontactCissInputCapacitance–––760–––VGS=0VCossOutputCapacitance–––260–––pFVDS=-25VCrssReverseTransferCapacitance–––170–––ƒ=1.0MHz,SeeFig.5…ElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)IGSSnsIDSSDrain-to-SourceLeakageCurrentnH7.5LSInternalSourceInductance-14-56IRF9530NS/LFig4.NormalizedOn-ResistanceVs.TemperatureFig2.TypicalOutputCharacteristicsFig1.TypicalOutputCharacteristicsFig3.TypicalTransferCharacteristics0.11101000.1110100DDS20μsPULSEWIDTHT=25°CcA-I,Drain-to-SourceCurrent(A)-V,Drain-to-SourceVoltage(V)VGSTOP-15V-10V-8.0V-7.0V-6.0V-5.5V-5.0VBOTTOM-4.5V-4.5V0.11101000.1110100DDSA-I,Drain-to-SourceCurrent(A)-V,Drain-to-SourceVoltage(V)VGSTOP-15V-10V-8.0V-7.0V-6.0V-5.5V-5.0VBOTTOM-4.5V-4.5V20μsPULSEWIDTHT=175°CC0.111010045678910T=25°CJGSDA-I,Drain-to-SourceCurrent(A)-V,Gate-to-SourceVoltage(V)V=-50V20μsPULSEWIDTHT=175°CDSJTJ=25°CTJ=175°C-60-40-200204060801001201401601800.00.51.01.52.02.5T,JunctionTemperature(C)R,Drain-to-SourceOnResistance(Normalized)JDS(on)°V=I=GSD-10V-14AIRF9530NS/LFig8.MaximumSafeOperatingAreaFig6.TypicalGateChargeVs.Gate-to-SourceVoltageFig5.TypicalCapacitanceVs.Drain-to-SourceVoltageFig7.TypicalSource-DrainDiodeForwardVoltage0400800120016002000110100C,Capacitance(pF)ADS-V,Drain-to-SourceVoltage(V)V=0V,f=1MHzC=C+C,CSHORTEDC=CC=C+CGSissgsgddsrssgdossdsgdCissCossCrss0.11101000.40.60.81.01.21.41.6T=25°CT=150°CJJV=0VGSSDSDA-I,ReverseDrainCurrent(A)-V,Source-to-DrainVoltage(V)010203040506005101520Q,TotalGateCharge(nC)-V,Gate-to-SourceVoltage(V)GGSFORTESTCIRCUITSEEFIGUREI=D13-8.4AV=-20VDSV=-50VDSV=-80VDS11010010001101001000OPERATIONINTHISAREALIMITEDBYRDS(on)SinglePulseTT=175C=25C°°JC-V,Drain-to-SourceVoltage(V)-I,DrainCurrent(A)I,DrainCurrent(A)DSD10us100us1ms10msIR