CVD化学沉积-工艺详细讲解

&&99''Ꮉ㡎ҟ㒡Ꮉ㡎ҟ㒡&$2-,1*3/&$2-,1*3/COMENTCOMENT&9'&9'ٝྼؠ೭ٝྼؠ೭&9'&9'ٝྼࠚ౵ٝྼࠚ౵&9'&9'ٝྼඋ໿ϵ೴ࠚ౵ٝྼඋ໿ϵ೴ࠚ౵&9'&9'Шߎ࿓ШШߎ࿓Ш3DUWġ&9'ٝྼؠ೭&9'&9'Շ࿌Շ࿌&9'&9'ٝྼԅඋԤރֱ࿫ޔԅ༪႔ٝྼԅඋԤރֱ࿫ޔԅ༪႔&9'&9'ٝྼԅדफٝྼԅדफϢලफ໸Ϣලफ໸&9'&9'ٝྼඋ໿Αࠀٝྼඋ໿Αࠀ&9'&9'੧ಓЩڶё੧ಓЩڶё&9'&9'੧ၽ੧ၽ,&,&ᄯԅ࿫ဈᄯԅ࿫ဈ&9'&9'Ꮉ㡎Ꮉ㡎DefinitionChemicalVaporDeposition(࣪ᄺ⇨Ⳍ≝⿃˅canbedefinedasthedepositionofasolidonaheatedsurfacefromachemicalreactioninthevaporphase.䗮䖛࣪ᄺডᑨ៪ᰃ⛁ߚ㾷ѻ⫳࣪ᄺব࣪㝰Ё᠔᳝ⱘᴤ᭭⠽䋼䛑⑤Ѣ໪䚼ⱘ⑤࣪ᄺ⇨Ⳍ⎔⿃Ꮉ㡎Ёⱘডᑨ⠽ᖙ乏ҹ⇨ⳌᔶᓣখࡴডᑨEssenceItbelongstotheclassofvapor-transferprocesseswhichisatomisticinnature,thatisthedepositionspeciesareatomsormoleculesoracombinationofthese.⎔⿃䖛⿟ᰃॳᄤ៪ߚᄤП䯈ⱘডᑨ&9'&9'Ꮉ㡎ⱘ⡍⚍ঞডᑨࠖⱘ䗝ᢽᎹ㡎ⱘ⡍⚍ঞডᑨࠖⱘ䗝ᢽϔǃ&9'Ꮉ㡎ⱘ⡍⚍˖˄˅&9'៤㝰⏽ᑺ䖰ԢѢԧᴤ᭭ⱘ❨⚍ˈޣ䕏㹀ᑩⱘ⛁ᔶবˈޣᇥ⦋∵ˈᡥࠊ㔎䱋⫳៤ˈޣ䕏ᴖ䋼ݡߚᏗˈ䗖Ѣ⌙㒧Ꮉ㡎DŽ䆒໛ㅔऩǃ䞡໡ᗻདDŽ˄˅&9'㝰ⱘ៤ߚৃ㊒⹂᥻ࠊˈ䜡↨㣗ೈ䕗໻DŽ˄˅⎔⿃䗳⥛ᖿˈѻ㛑ᔎDŽ˄˅&9'㝰㒧ᵘ㟈ᆚǃᅠᭈˈϢ㹀ᑩ咣䰘ᗻདˈৄ䰊㽚Ⲫᗻ㛑དDŽѠǃ䗝ᢽ&9'ডᑨࠖⱘޚ߭˖˄˅ডᑨࠖⱘ㒃ᑺঞ㪌≑य़ᖙ乏䎇໳催DŽ˄˅ডᑨࡃѻ⠽ᖙ乏ᰃ催᣹থᗻⱘˈϡܕ䆌⇨ᗕࡃѻ⠽䖯ܹ⎔⿃㭘㝰Ё˄˅⎔⿃⠽ᖙ乏ᰃ〇ᅮⱘ࣪ড়⠽ǃ೎⒊ԧ៪᣹থᗻᵕԢⱘ⠽䋼ˈᖙ乏݋᳝䎇໳Ԣⱘ㪌≑य़ҹֱ䆕ᭈϾ⎔⿃䖛⿟Ё㭘㝰㛑໳ྟ㒜⬭೼㹀ᑩ㸼䴶Ϟ˄˅䳔㗗㰥&9'ডᑨⱘ⛁࡯ᄺǃࡼ࡯ᄺǃ㭘㝰ⱘ㒧᱊ᄺㄝ⡍ᗻҹঞ⫳ѻⱘᅝܼᗻDŽCVDCVDᎹ㡎ⱘߚ㉏Ꮉ㡎ⱘߚ㉏ϔǃᣝᎹ㡎ᴵӊЏ㽕ߚЎ˖˄˅$3&9'˄ᐌय़&9'˅˄˅/3&9'˄Ԣय़&9'˅˄˅3(&9'˄ㄝ⾏ᄤ๲ᔎ&9'˅˄˅3&9'˄ܝ&9'˅˄˅ĂĂѠǃᣝ⫳៤㝰ⱘᗻ䋼ৃߚЎ˖˄˅䞥ሲ&9'˄˅ञᇐԧ&9'˄˅ҟ䋼&9'⾡㉏㭘㝰⑤ᴤ᭭Si(໮᱊)SiH4(⸙⛋)ञᇐԧSiCl2H2(Ѡ∃⸙⛋˗DCS)Si(ऩ᱊)SiCl3H(ϝ∃⸙⛋˗TCS)SiCl4(ಯ∃⸙⛋˗Siltet)LPCVDSiH4,O2SiO2(⦏⩗)PECVDSiH4,N2Oҟ⬉䋼PECVDSi(OC2H5)4(ಯЭ⇻෎⸙⛋ˈTEOS),O2LPCVDTEOSAPCVD&SACVDTMTEOS,O3(ozone)OxynitrideSiH4,N2O,N2,NH3PECVDSiH4,N2,NH3Si3N4LPCVDSiH4,N2,NH3LPCVDC8H22N2Si(BTBAS)W(䩼)WF6(݁⇳࣪䩼),SiH4,H2WSi2WF6(݁⇳࣪䩼),SiH4,H2ᇐԧTiNTi[N(CH3)2]4(TDMAT)TiTiCl4Cu೼IC⫳ѻࠊ䗴䖛⿟ЁˈCVDᎹ㡎ৃ⫳䭓ҟ䋼㝰ǃञᇐԧ㝰ǃᇐԧ㝰ҹঞ䍙ᇐ㝰DŽЏ㽕䖤⫼CVDᎹ㡎⫳䭓ҟ䋼㝰˄SiO2ǃSiN˅ǃञᇐԧ㝰˄Polyˈetc˅ǃᇐԧ㝰˄WǃWsiˈetc˅DŽϡৠ㉏ൟⱘϡৠ㉏ൟⱘ&9'&9'ঞ݊⡍ᗻঞ݊⡍ᗻᎹ㡎Ӭ⚍㔎⚍ᑨ⫼$3&9'˄ᐌय़&9'˅ডᑨㅔऩˈ⎔⿃䗳ᑺᖿˈԢ⏽ৄ䰊㽚Ⲫ㛑࡯Ꮒˈ᳝乫㉦∵ᶧˈԢѻߎ⥛Ԣ⏽6L2˄ᦎᴖ៪ϡᦎᴖ˅/3&9'˄Ԣय़&9'˅催㒃ᑺ੠ഛࣔᗻˈϔ㟈ⱘৄ䰊㽚Ⲫ㛑࡯ˈ໻ⱘ⸙⠛ᆍ䞣催⏽ˈԢⱘ⎔⿃䗳⥛ˈ䳔㽕᳈໮ⱘ㓈ᡸˈ㽕∖ⳳぎ㋏㒳ᬃᣕ催⏽6L2˄ᦎᴖ៪ϡᦎᴖ˅ǃ6L1ǃ໮᱊⸙ǃ:ǃ:6Lㄝ⾏ᄤԧ䕙ࡽ&9'ㄝ⾏ᄤԧ๲ᔎ&9'3(&9'催ᆚᑺㄝ⾏ᄤԧ&9'+'3&9'Ԣ⏽ˈᖿ䗳⎔⿃ˈདⱘৄ䰊㽚Ⲫ㛑࡯ˈདⱘ䯈䱭฿ܙ㛑࡯㽕∖5)㋏㒳ˈ催៤ᴀˈय़࡯䖰໻Ѣᓴ࡯ˈ࣪ᄺ⠽䋼˄བ+੠乫㉦⊒∵催ⱘ⏅ᑺ↨䯈䱭ⱘ฿ܙˈ䞥ሲϞⱘԢ⏽6L2,/',/'Ўњঠ䭊ጠ㒧ᵘⱘ䪰㉑᱊ሖˈ䩱࣪6L1CVDCVDᓂس叿㧄࿓ᓂس叿㧄࿓ᄭޗறࠩ㧃དྷ䨟।૿ᄭޗறڇ।૿ฝ㣅ᄭޗறڇ।૿֘䬗ګு܂شΚ䫑㦮ढݮګ䫑㦮ढګ叿䫑㦮ढګ叿Δ䊎ኲ૿䨞䫑㦮ढٽڢ劖但ᜳᓂ•ᩥ᫿ࢨਢᩥઌᄭޗற֧劓֘䬗ᕴ㡕�ᄭޗற䮃ཋઠ㧄㤈੺䪾ڢ൷⡣ഗׂ।૿�ᄭޗறܮॵڇഗׂ।૿Ղ�ܮॵऱ଺ޗற٦ഗׂ।૿Ղฝ㣅�ڇഗׂ।૿Ղ䬞ࡨ֏䝤֘䬗�ࡐ䬾೫䣈ढڇഗׂ।૿Ղݮګདྷு�དྷுس叿ګ䫑㦮ढ�䫑㦮ढٽڢګ劖但ऱᜳᓂ�ࠡ،ᩥ᫿೫䣈঴㡘ഗׂ।૿Ղ㷯ॵ勋נ�ᩥ᫿೫䣈঴䮃ཋ㧄㤈੺䪾�ᩥ᫿೫䣈঴ੌנ֘䬗ᕴ.CVDCVD㝰೼㝰೼ICICЁⱘᑨ⫼Ёⱘᑨ⫼ǃ⌙≳ῑ㒱㓬67,ǃջຕぎ䯈ሖ˄VSDFHUˈ䖭ᰃᔶ៤Ԣᦎᴖⓣᵕ/''੠ᠽᬷ㓧ކሖ᠔䳔㽕ⱘǃ໮ሖ䞥ሲѦ䖲Ёᔧخ⬉఼䱨⾏ⱘҟ⬉䋼ሖ䞥ሲ⎔⿃ࠡⱘҟ⬉䋼ሖ30'䗮ᐌՓ⫼ᦎᴖ⇻࣪⠽36*៪%36*⏽ᑺফ⛁⿃ᄬ䰤ࠊ䞥ሲሖ䯈ҟ⬉䋼ሖ,0'Փ⫼86*៪)6*䗮ᐌ೼⏽ᑺ&⎔⿃ǃᡫডᇘሖ䬔㝰$5&6L21ǃ䩱ֱ࣪ᡸҟ⬉䋼ሖ3'௜֏⊕(SiO2)ེ֏⊕(Si3N4)೏տ䶣㺞৫,1x107V/cm೏տ䶣㺞৫,1x107V/cm܅տ䶣ൄ䀀,=3.9೏տ䶣ൄ䀀,=7.0࿫؆优ױઠຘེ֏ढ࿫؆优㡰ऄઠຘױא๯PࢨB㵩䰎㢑ֽᩥᩓױฝ㣅⊞՗ऱॴ㬢ࢤլࠋ(Na+)㢑ֽᩥᩓױฝ㣅⊞՗ऱॴ㬢ࢤࠋ(Na+)3DUWġ&9'ٝྼࠚ౵ԉशᆐ႙ஜԉशᆐ႙ஜ&9'&9'ďď3(&9'3(&9'Đٝྼࠚ౵Đٝྼࠚ౵%37(26%37(263(7(263(7(263(6,13(6,1&03&03ٝྼࠚ౵ٝྼࠚ౵62*62*ٝྼࠚ౵ٝྼࠚ౵6$&9'6$&9'ٝྼࠚ౵ٝྼࠚ౵:&9':&9'ٝྼࠚ౵ٝྼࠚ౵ԉशᆐ႙ஜԉशᆐ႙ஜ&9'&9'ďď3(&9'3(&9'ĐĐPECVDPECVDThermalCVDreliesonthermalenergytoactivatethereaction,anddepositiontemperatureareusuallyhigh.InPlasam-EnhancedCVD˄ㄝ⾏ᄤԧ๲ᔎCVD˅,thereactionisactivatedbyaplasamandthedepositiontemperatureissubstaintiallylower.Փ⫼ㄝ⾏ᄤԧ㛑䞣ᴹѻ⫳ᑊ㓈ᣕ&9'ডᑨ⾏ᄤ᳝䕗䭓ⱘᑇഛ㞾⬅䏃ᕘˈӮᦤ催⎔⿃䗳⥛3ODVPDⱘ⾏ᄤ䕄ߏ㛑໳এ䰸㸼䴶ᴖ䋼ˈ๲ᔎ咣䰘ᗻᇘ乥5)ৃҹ᥻ࠊ⎔⿃㭘㝰ⱘᑨ࡯ডᑨᅸৃ⫼3ODVPD⏙⋫PlasamCVDwasfirstdevelopedinthe1960sforsemiconductorapplication,notablyforthesiliconnitride.ডᑨ⏽ᑺ䖰䖰ԢѢ/3&9'ⱘডᑨ⏽ᑺPlasmaPlasmaҟ㒡ҟ㒡⠽䋼ⱘ㄀ಯᗕ⠽䋼ߚᄤ⛁䖤ࡼࡴ࠻ˈⳌѦ䯈ⱘ⺄ᩲህӮՓ⇨ԧߚᄤѻ⫳⬉⾏ˈ䖭ḋ⠽䋼ህব៤⬅㞾⬅䖤ࡼᑊⳌѦ԰⫼ⱘℷ⾏ᄤ੠⬉ᄤ㒘៤ⱘ⏋ড়⠽㳵⚯ⱘ☿✄ህ໘Ѣ䖭⾡⢊ᗕˈेㄝ⾏ᄤԧSODVPDDŽᅗᰃ䰸೎ǃ⎆ǃ⇨໪ˈ⠽䋼ᄬ೼ⱘ㄀ಯᗕDŽޚ⬉Ёᗻ⬉⾏䖛⿟Ёℷ⾏ᄤ੠⬉ᄤᘏᰃ៤ᇍߎ⦄ˈ᠔ҹㄝ⾏ᄤԧЁℷ⾏ᄤ੠⬉ᄤⱘᘏ᭄໻㟈ⳌㄝˈᘏԧᴹⳟЎޚ⬉ЁᗻDŽড䖛ᴹˈ៥Ӏৃҹᡞㄝ⾏ᄤԧᅮНЎ˖ℷ⾏ᄤ੠⬉ᄤⱘᆚᑺ໻㟈Ⳍㄝⱘ⬉⾏⇨ԧDŽeeeeeeeeHowToAchieveAPlasmaHowToAchieveAPlasmaIonizationtemperaturesareusuallyextremelyhigh(5000K),soalargeamountofthermalenergyisrequired.Amoreconvenientwaytoachieveaplasmaiswithelectricalenergy,suchasalow-frequencydischarge.Byincreasingtheelectricalenergyinafixedamountofgas,allmoleculesareeventuallydissociatedandcompleteionizationisachieved.energygasplasmaeeeeRFRF˄˄13.56HZ13.56HZ˅˅ދຕডᑨދຕডᑨPECVDᰃ݌ൟⱘދຕㄝ⾏ᄤԧডᑨˈ㒓Ϟ⫼ⱘЎP5000䆒໛DŽދຕডᑨᅮН˖⸙⠛ঞ⸙⠛ᬃᩥ⠽㹿ࡴ⛁ࠄ䕗催⏽ᑺ㗠݊ᅗ䚼ߚ᳾㹿ࡴ⛁DŽᎹ㡎೚⠛䗮䖛ODPSࡴ⛁䖒ࠄᎹ㡎⏽ᑺˈ㜨ԧⲪᄤ੠ಯຕ᳝ދै∈Փֱ݊ᣕ䕗Ԣⱘ⏽ᑺˈՓডᑨথ⫳೼೚⠛㸼䴶੠᥹䖥㸼䴶ⱘऎඳDŽP5000P5000PECVDPECVDЁ㝰ⱘᔶ៤Ё㝰ⱘᔶ៤⇨ԧ⌕ࡼࠄ⸙⠛㸼䴶⇨ԧ⌕ࡼࠄ⸙⠛㸼䴶⇨Ⳍডᑨᇐ㟈㝰ܜ偅⠽ᔶ៤⇨Ⳍডᑨᇐ㟈㝰ܜ偅⠽ᔶ៤㝰ܜ偅⠽㉬䰘೼⸙⠛㸼䴶㝰ܜ偅⠽㉬䰘೼⸙⠛㸼䴶㝰ܜ偅⠽৥⸙⠛㸼䴶ᠽᬷ㝰ܜ偅⠽৥⸙⠛㸼䴶ᠽᬷ㝰⎔⿃੠ࡃѻ⠽ᕫᔶ៤㝰⎔⿃੠ࡃѻ⠽ᕫᔶ៤ࡃѻ⠽Ң㸼䴶⿏䰸ࡃѻ⠽Ң㸼䴶⿏䰸ࡃѻ⠽Ңডᑨ㜨⿏䰸ࡃѻ⠽Ңডᑨ㜨⿏䰸㝰ܜ偅⠽䖤䕧ࠄ⸙⠛㸼䴶㝰ܜ偅⠽䖤䕧ࠄ⸙⠛㸼䴶ࠫ࿓֘䬗৛ࠫ࿓֘䬗৛೫֘䬗ढ๯pumpࢼߨף䴴ࣨདྷ䨟ㄝ⾏ᄤԧRFפ෷䣈سᕴ3(&9'ॳ⧚˖ᴤ᭭⑤ҹ⇨ԧᔶᓣ䖯ܹᎹ㡎㜨ԧݙˈ೼5)ࡴࡳ⥛ⱘᚙމϟˈᴤ᭭⑤˄ডᑨ⇨ԧ˅Ң䕝ܝᬒ⬉˄3ODVPD˖ㄝ⾏ᄤഎ˅Ё㦋ᕫ▔⌏㛑ˈ▔⌏ᑊ๲ᔎ࣪ᄺডᑨˈҢ㗠ᅲ⦄࣪ᄺ⇨䈵⎔⿃DŽ3ⱘ⏙⋫˖&)˄&)ǃ&)˅6L2˄6L1˅SODVPDǃKHDW6L)˄YRODWLOH˅&2˄YRODWLOHRWKHUVYRODWLOHV&)&)))6,26,)2)6,16,)1PECVDPECVDডᑨᅸⱘ⏙⋫ডᑨᅸⱘ⏙⋫噝೼ҟ⬉䋼&9'ࠊ⿟Ёˈҟ⬉䋼㭘㝰ᇚ⎔⿃೼ডᑨᅸݙⱘӏԩഄᮍϡҙҙ೼ZDIHUⱘ㸼䴶⏙⋫䖛⿟ᇚҟ⬉䋼㭘㝰Ңࠊ⿟䆒໛䳊ӊҹঞডᑨᅸݙຕ⿏䰸噝Ўњ䙓ܡ乫㉦∵ᶧⱘ䯂乬䞛⫼ϔ⠛ϔ⏙⋫⏙⋫ॳ⧚Փ⫼⇳⺇࣪ড়⠽ڣᰃ&)&)੠&)ᔧ԰⇳ⱘ⑤ᴤ᭭⇨ԧˈ೼SODVPD԰⫼ϟ⇳⺇࣪ড়⠽Ӯ㹿ߚ㾷䞞ᬒߎ⇳㞾⬅෎)ৃ⿏䰸⇻࣪⸙ҹঞ∂࣪⸙DŽㄝ⾏ᄤԧㄝ⾏ᄤԧㄝ⾏ᄤԧࡴ⛁ࡴ⛁PECVDPECVDҟ⬉䋼㝰ߚ㉏ঞডᑨॳ⧚ҟ⬉䋼㝰ߚ㉏ঞডᑨॳ⧚ϔˊϔˊ%37(26%37(26˖˖USG+PSG/BPSG˄Pᦎᴖⱘ⸙⦏⩗ঞBǃPᦎᴖⱘ⸙⦏⩗˅1ǃᎹ㡎ᴤ᭭˖TEOS˄ℷ⸙䝌Э䝃˅ǃO2ǃTMBǃTMPǃNH32ǃডᑨॳ⧚˖TEOS+TMB+TMP+O2-----plasmaǃheat----SiO2˄B2O3ǃP2O5˅+volatilesϝˊϝˊ3(6,13(6,1˖˖1ǃᎹ㡎ᴤ᭭˖SIH4ǃN2ǃNH32ǃড᯴ॳ⧚˖SiH4+N2˄N2ǃNH3˅------plasmaǃheat---------SiNxHy+volatilesѠˊѠˊ3(7(263(7(26˖˖᳾᧔ᴖⱘ6,⦏⩗1ǃᎹ㡎ᴤ᭭˖TEOSǃO22ǃডᑨॳ⧚˖TEOS+O2-----------plasmaǃheat--------SiO2˄H˅+volatiles3(&9'ॳ⧚˖ᴤ᭭⑤ҹ⇨ԧᔶᓣ䖯ܹᎹ㡎㜨ԧݙˈ೼5)ࡴࡳ⥛ⱘᚙމϟˈᴤ᭭⑤˄ডᑨ⇨ԧ˅Ң䕝ܝᬒ⬉˄3ODVPD˖ㄝ⾏ᄤഎ˅Ё㦋ᕫ▔⌏㛑ˈ▔⌏ᑊ๲ᔎ࣪ᄺডᑨˈҢ㗠ᅲ⦄࣪ᄺ⇨䈵⎔⿃DŽ3(&9'3(&9'Џ㽕Ꮉ㡎˖Џ㽕Ꮉ㡎˖%37(26%37(26ǃǃ3(7(263(7(