HUF75645S3ST中文资料

©2001FairchildSemiconductorCorporationHUF75645P3,HUF75645S3SRev.BHUF75645P3,HUF75645S3S75A,100V,0.014Ohm,N-Channel,UltraFET®PowerMOSFETsPackagingSymbolFeatures•UltraLowOn-Resistance-rDS(ON)=0.014Ω,VGS=10VSimulationModels-TemperatureCompensatedPSPICE®andSABER™ElectricalModels-SpiceandSaberThermalImpedanceModels-PeakCurrentvsPulseWidthCurveUISRatingCurveOrderingInformationAbsoluteMaximumRatingsTC=25oC,UnlessOtherwiseSpecifiedProductreliabilityinformationcanbefoundat(FLANGE)DRAINSOURCEGATEHUF75645P3GATESOURCEDRAIN(FLANGE)HUF75645S3SDGSPARTNUMBERPACKAGEBRANDHUF75645P3TO-220AB75645PHUF75645S3STO-263AB75645SNOTE:Whenordering,usetheentirepartnumber.AddthesuffixTtoobtainthevariantintapeandreel,e.g.,HUF75645S3ST.HUF75645P3,HUF75645S3SUNITSDraintoSourceVoltage(Note1)...............................................VDSS100VDraintoGateVoltage(RGS=20kΩ)(Note1).....................................VDGR100VGatetoSourceVoltage.......................................................VGS±20VDrainCurrentContinuous(TC=25oC,VGS=10V)(Figure2)...................................IDContinuous(TC=100oC,VGS=10V)(Figure2)..................................IDPulsedDrainCurrent........................................................IDM7565Figure4AAPulsedAvalancheRating......................................................UISFigures6,14,15PowerDissipation............................................................PDDerateAbove25oC............................................................3102.07WW/oCOperatingandStorageTemperature.........................................TJ,TSTG-55to175oCMaximumTemperatureforSolderingLeadsat0.063in(1.6mm)fromCasefor10s.......................................TLPackageBodyfor10s,SeeTechbriefTB334.....................................Tpkg300260oCoCNOTES:1.TJ=25oCto150oC.CAUTION:Stressesabovethoselistedin“Absol24uteMaximumRatings”maycausepermanentdamagetothedevice.Thisisastressonlyratingandoperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.DataSheetDecember2001©2001FairchildSemiconductorCorporationHUF75645P3,HUF75645S3SRev.BElectricalSpecificationsTC=25oC,UnlessOtherwiseSpecifiedPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITSOFFSTATESPECIFICATIONSDraintoSourceBreakdownVoltageBVDSSID=250µA,VGS=0V(Figure11)100--VZeroGateVoltageDrainCurrentIDSSVDS=95V,VGS=0V--1µAVDS=90V,VGS=0V,TC=150oC--250µAGatetoSourceLeakageCurrentIGSSVGS=±20V--±100nAONSTATESPECIFICATIONSGatetoSourceThresholdVoltageVGS(TH)VGS=VDS,ID=250µA(Figure10)2-4VDraintoSourceOnResistancerDS(ON)ID=75A,VGS=10V(Figure9)-0.01150.014ΩTHERMALSPECIFICATIONSThermalResistanceJunctiontoCaseRθJCTO-220andTO-263--0.48oC/WThermalResistanceJunctiontoAmbientRθJA--62oC/WSWITCHINGSPECIFICATIONS(VGS=10V)Turn-OnTimetONVDD=50V,ID=75AVGS=10V,RGS=2.5Ω(Figures18,19)--197nsTurn-OnDelayTimetd(ON)-14-nsRiseTimetr-117-nsTurn-OffDelayTimetd(OFF)-41-nsFallTimetf-97-nsTurn-OffTimetOFF--207nsGATECHARGESPECIFICATIONSTotalGateChargeQg(TOT)VGS=0Vto20VVDD=50V,ID=75A,Ig(REF)=1.0mA(Figures13,16,17)-198238nCGateChargeat10VQg(10)VGS=0Vto10V-106127nCThresholdGateChargeQg(TH)VGS=0Vto2V-6.88.2nCGatetoSourceGateChargeQgs-14-nCGatetoDrain“Miller”ChargeQgd-41-nCCAPACITANCESPECIFICATIONSInputCapacitanceCISSVDS=25V,VGS=0V,f=1MHz(Figure12)-3790-pFOutputCapacitanceCOSS-810-pFReverseTransferCapacitanceCRSS-230-pFSourcetoDrainDiodeSpecificationsPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITSSourcetoDrainDiodeVoltageVSDISD=75A--1.25VISD=35A--1.00VReverseRecoveryTimetrrISD=75A,dISD/dt=100A/µs--145nsReverseRecoveredChargeQRRISD=75A,dISD/dt=100A/µs--360nCHUF75645P3,HUF75645S3S©2001FairchildSemiconductorCorporationHUF75645P3,HUF75645S3SRev.BTypicalPerformanceCurvesFIGURE1.NORMALIZEDPOWERDISSIPATIONvsCASETEMPERATUREFIGURE2.MAXIMUMCONTINUOUSDRAINCURRENTvsCASETEMPERATUREFIGURE3.NORMALIZEDMAXIMUMTRANSIENTTHERMALIMPEDANCEFIGURE4.PEAKCURRENTCAPABILITYTC,CASETEMPERATURE(oC)POWERDISSIPATIONMULTIPLIER002550751001750.20.40.60.81.01.2125150204060805075100125150025ID,DRAINCURRENT(A)TC,CASETEMPERATURE(oC)VGS=10V1750.11210-410-310-210-11001010.0110-5t,RECTANGULARPULSEDURATION(s)ZθJC,NORMALIZEDTHERMALIMPEDANCESINGLEPULSENOTES:DUTYFACTOR:D=t1/t2PEAKTJ=PDMxZθJCxRθJC+TCPDMt1t2DUTYCYCLE-DESCENDINGORDER0.50.20.10.050.010.0210020005010-410-310-210-110010110-5IDM,PEAKCURRENT(A)t,PULSEWIDTH(s)TRANSCONDUCTANCEMAYLIMITCURRENTINTHISREGIONTC=25oCI=I25175-TC150FORTEMPERATURESABOVE25oCDERATEPEAKCURRENTASFOLLOWS:1000VGS=10VHUF75645P3,HUF75645S3S©2001FairchildSemiconductorCorporationHUF75645P3,HUF75645S3SRev.BFIGURE5.FORWARDBIASSAFEOPERATINGAREANOTE:RefertoFairchildApplicationNotesAN9321andAN9322.FIGURE6.UNCLAMPEDINDUCTIVESWITCHINGCAPABILITYFIGURE7.TRANSFERCHARACTERISTICSFIGURE8.SATURATIONCHARACTERISTIC