Microsemi功率半导 体产品线资料XXXX

   “COOLMOS”compriseanewfamilyoftransistorsdevelopedbyInfineonTechnologiesAG.“COOLMOS”isatrademarkofInfineonTechnologiesAG”ASPM®,PowerMOSV®,PowerMOS7®&T-MAX®areregisteredtrademarksofMicrosemiCorporationAboutMicrosemiMicrosemiPowerProductsGroupwascreatedin2006withtheacquisitionofAdvancedPowerTechnology,Inc.,acompanyattheforefrontofpowersemiconductortechnologysinceitsfoundingin1984.Ourfocusisonhighvoltage,highpowerandhighperformanceapplications.OurcommitmentistomaintainandenhancethispositionasatechnologicalleaderinMOScontrolleddevicesandDiodesandtodeliverproductswhichcontributetoourcustomers’successindeliveringhigherperformancepowersystems.Service…Outstandingtechnologyisonlypartofthestory.Aglobalnetworkofstockingdistributors,representatives,applicationsengineers,andwebtoolsareinplacetosupportallphasesofyourproductdesign,evaluationandprocurementactivities.Inaworldwhichdemandssuperiorexecution,we’vewonnumerousawardsasaserviceleader.Quality…Ourcommitmentistoexcellenceinallthingswedo.Whetheryouareevaluatingthequalityofourproducts,ourtechnicalassistance,ourcustomerserviceorthequalityofourinternalcommunicationssystems,excellenceisourstandard.Continuousimprovementisfundamentaltoourbusiness!CONTENTSHIGHVOLTAGESMPSTRANSISTORSPageNo.IGBTs(InsulatedGateBipolarTransistors)......................................................................3-5PowerMOS8TMMOSFETs/FREDFETs............................................................................6-8UltraLowGateChargeMOSFETs......................................................................................9COOLMOSTMMOSFETs.....................................................................................................10HighVoltageLinearMOSFETs.........................................................................................10DIODESUltraFastRecoveryDiodes........................................................................................11-13HIGHVOLTAGERFMOSFETS........................................................................................14DRIVERSANDDRIVER-RFMOSFETHYBRIDS...............................................................14HIGHFREQUENCYRFMOSFETS..................................................................................15REFERENCEDESIGNKIT..............................................................................................15POWERMODULES.................................................................................................16-17IGBTs(InsulatedGateBipolarTransistors)................................................................18-22MOSFETs....................................................................................................................23-27RenewableEnergyPowerModules.................................................................................27PowerModuleswithSiCSchottkyDiodes...................................................................28-29Diodes.......................................................................................................................30-33DualIGBTIsolatedDriver................................................................................................34PACKAGEOUTLINEDRAWINGS..............................................................................35-393InsulatedGateBipolarTransistors(IGBTs)102030405060708090100110120IGBTSwitchingFrequencyRanges(kHz,hardswitched)600V1200V900VThunderbolt®NPTThunderbolt®NPTThunderbolt®HighSpeed(HS)NPTFastNPTStandardSeriesVoltageRatings(V)TechnologyEasytoParallelShortCircuitSOACommentThunderbolt®600,1200NPTXXGeneralpurpose,highspeedThundebolt®HighSpeed600NPTXXHighestspeedFAST1200NPTXXGeneralpurpose,mediumspeedMOS8™600,900PTHighestefficiencyFieldStopTrenchGate600,1200FieldStopXXLowestconductionlossPowerMOS8TMPTPowerMOS8TMPTFieldStopFieldStopIGBTsfromMicrosemiPowerProductsGroup(PPG)IGBTproductsfromMicrosemiPPGprovidehighqualitysolutionsforawiderangeofhighvoltage,highpowerapplications.TheswitchingfrequencyrangespansfromDCforminimalconductionlosstoover100kHzforveryhighpowerdensitySMPSapplications.Thefrequencyrangeforeachproducttypeisshowninthegraphbelow.EachIGBTproductrepresentsthelatestinIGBTtechnology,providingthebestpossibleperformance/costcombinationforthetargetedapplication.TherearefiveproductseriesthatutilizethreedifferentIGBTtechnologies:Non-Punch-Through(NPT),Punch-Through(PT)andFieldStop.ProductOptionsAllstandardIGBTproductsareavailableasasingleIGBTorasaCombiproductpackagedwithananti-parallelDQseriesdiode.Pack-ageoptionsincludeTO-220,TO-247,T-Max®,TO-264,andSOT-227.Customizedproductsareavailable;contactthefactoryfordetails.ResonantModeCombiNewin2008areResonantModeCombiproducts,whicharehighspeedIGBTspackagedwithalowVFanti-parallelDLseriesdiode.TheseCombisareintendedforuseinresonantmodecircuits,suchasthephaseshiftedbridge,wherefastturn-offoftheIGBTisneededbuttherecoveryspeedoftheanti-paralleldiodeislessimportantthanitsforwardvoltage.Resonant