搜索
1998-11-10;1999-01-11204Vol.20No.419998SemiconductorOptoelectronicsAug.1999:1001-5868(1999)04-0241-04CTLM/,,,,,(,730000):(CTLM)/Al/SiCAl/Si2.410-5cm2:/:TN304.07:AMeasurementofspecificcontactresistanceofmetal/semiconductorusingCTLMSUNYan-jie,HEShan-hu,ZHENCong-mian,GONGHeng-xiang,YANGYing-hu,WANGYin-yue(Dept.ofPhysics,LanzhouUniversity,Lanzhou730000,China)Abstract:Themethodusingcirculartransmissionlinemodel(CTLM)tomeasurethespecificcontactresistance(C)betweenmetalsandsemiconductorsispresentedinthispaper.Thespecificcontactresistanceofvarioussampleswithdifferentdopingconcentrationhasbeenmeasuredbeforeandafterannealing.ThelowestCreaches2.410-5cm2.Keywords:circulartransmissionlinemodel,metal/semiconductorcontact,specificcontactresis2tance1/,(),[1],,-,,C/C,(TLM)[2]C,TLM(CTLM)[3],,CTLM,[4],()CTLM,Al/Si,Al/Si,/Al/Si©1994-2007ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a),r0,r1r1,r2r2,1(b)RA,RBRA,RBRA=Rsh2lnr1r0(1a)RB=Rsh2lnr2r1(1b)R1,R2,R1R2()R1=RA+RC0+RC1(2)R2=RB+RC1+RC2(3)RA,RBRshCTLM,RC0,RC1,RC1,RC21(c)CTLM,Rsh,Rsk1(c),Rskdx/2x,2xdx/C,xdx,dVdx=i(x)Rsk2x(4a)didx=V(x)2xC(4b)i(x)x,V(x)x(4a)i(x),V(x):d2Vdx2+1xdVdx-2V=0(5)=Rsk/C()(5),:V(x)=aI0(x)+bK0(x),,Reeves[3],RC0:(b)(c)(a);(b);(c)1(a)Basicmodel;(b)Cross-sectiendiagram;(c)PrinciplediagramFig.1Parametersforcircularcontactmodelandcirculartrans2missionlinemodelRC0=RskI0(r0)2r0I1(r0)=Z0E(r0)(6)RC1:RC1=Rsk2r1I1(r1)K0(r1)+I0(r1)K1(r1)I1(r1)K1(r1)-I1(r1)K1(r1)=Z1B(r1,r1)C(r1,r1)(7)RC1:24219998©1994-2007ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.=Rsk2r1I1(r1)K0(r1)+I0(r1)K1(r1)I1(r1)K1(r1)-I1(r1)K1(r1)=Z1B(r1,r1)C(r1,r1)(8)RC2:RC2=Rsk2r2I1(r2)K0(r2)+I0(r2)K1(r2)I1(r2)K1(r2)-I1(r2)K1(r2)=Z2B(r2,r2)C(r2,r2)(9)Re,Re=V(r1)i(r1)i(r1)=0Re=V(r1)i(r1)i(r1)=0:Re=Rsk2A(r1,r1)B(r1,r1)C(r1,r1)+D(r1,r1)(10)Re,R1R2,-r0,,C=lnr2r1R1-lnr1r0R2/Re=lnr2r1E(r0)r0+1r1A(r1,r1)C(r1,r1)-lnr1r01r1B(r1,r1)C(r1,r1)+1r2A(r2,r2)C(r2,r2)/A(r1,r1)B(r1,r1)C(r1,r1)+D(r1,r1)(11)=2(r0)2/A(r1,r1)B(r1,r1)C(r1,r1)+D(r1,r1)(12)C=lnr2r1R1-lnr1r0R2(r0)2(13)3B10cmp-SiP(11019cm-3)B(11021cm-3),p-Si,n+p-Sip+p-Si,AlAl/p-Si,Al/n+p-SiAl/p+p-Si,Al/p-Si,Al/n+p-SiAl/p+p-Si44.1Al/p-Si2Al/p-Si-2,,6005minI-V,,,CTLM,C8.3810-2cm26.5110-1cm2,600C6.0310-3cm2AlAl/p-Si,AlSiSi,Al/p-Si,,Al/SiSiAl-Si,Al/p+p-Si,[5],2Al/p-SiI-VFig.2ThemeasuredI-VcurvesofAl/p-Sisamplesend-resistance4.2Al/p+p-SiAl/n+p-Si3Al/n+p-SiAl/p+p-SiI/V3,,I-V,Al/n+p-Si,C1.3210-3cm253010min9.0110-5cm2,Al/p+p-Si,Al/p+p-SiC6.1410-4cm2342204:CTLM/©1994-2007ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a)(b)(a)Al/n+p-Si;(b)Al/p+p-Si3Al/n+p-SiAl/p+p-SiI-V(a)Al/n+p-Si;(b)Al/p+p-SiFig.3ThemeasuredI-VcurvesofAl/n+p-SiandAl/p+p-Sisamplesend-resistancebeforeandafteran2nealingp-SiP,Bn+p-Sip+p-Si,AlAl/n+p-SiAl/p+p-Si[5],B(11021cm-3),P(11019cm-3),Al/p+p-SiAl/p+p-Si,C2.410-5cm25CTLM/,Al/Si2.410-5cm2[1]MorKocH,StriteS,GaoGBetal.Large-band-gapSiC,-nitride,and-ZnSe-basedsemicon2ductordevicetechnologies[J].J.Appl.Phys.,1994,76(3):1363.[2]BergerHH.Modelsforcontactstoplanardevices[J].SolidStateElectronics,1972,15:145.[3]ReevesGK.Specificcontactresistanceusingacirculartransmissionlinemodel[J].SolidStateElectronics,1980,23:487.[4]McMullinPG,SpitznagalJA,SzedonJRetal.Contactresistantofhigh-temperatureSiCmetallization[J].Springerproceedingsinphysics,1992,56:275.[5].[M].:,1990:293.,19731996,,,,44219998©1994-2007ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.