嵌入式闪存适用的新型低压高效率电荷泵电路-王雪强

ISSN1000-0054CN11-2223/N()JTsinghuaUniv(Sci&Tech),20115132011,Vol.51,No.311/28340-344嵌入式闪存适用的新型低压高效率电荷泵电路王雪强,伍冬,谯凤英,潘立阳,张志刚,周润德(,100084):2010-06-04:(60876076):(1985)),(),,:,,E-mail:[e-mail]:随着片上系统(SoC)电源电压的降低,嵌入式快闪存储器内部电荷泵电路的电压增益不断下降为提高低电源电压下电荷泵电路的效率,提出了一个基于两路互补结构的高效率电荷泵电路,并设计了栅压提高电路与衬底调节电路,二者的共同作用可以有效地减少传输电压的损失,提高电荷泵电路的电压增益模拟结果表明:当电源电压为1.5V时,相比于传统的电路结构,所提出的电荷泵电路电压增益有很大的提高该电路特别适用于低电源电压下工作的嵌入式快闪存储器:电荷泵电路设计;低电压;高效率;嵌入式闪存:TN402:A:1000-0054(2011)03-0340-05Low-voltage,high-efficiencychargepumpcircuitforembeddedflashmemoryWANGXueqiang,WUDong,QIAOFengying,PANLiyang,ZHANGZhigang,ZHOURunde(InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,China)Abstract:Reductionofthepowersupplyvoltageforsystemonchip(SoC)designshasreducedthevoltagegainofthechargepumpcircuitinembeddedflashmemory(eFlash).Theefficiencyofthechargepumpcircuitforlowsupplyvoltagesisimprovedbyachargepumpcircuitbasedonthedua-lpathcircuitstructure.Thecircuitusesafeedbackinvertertoenhancethegatevoltageofthechargetransferswitch(CTS),withabody-controlledcircuittoeliminatetheCTSbodyeffect,thusreducingthethresholdvoltageloss.Testsshowthatthechargepumpcircuitoutputvoltageismorethantwicethatofaconventionalcircuit,sothischargepumpcircuitisveryusefulforlow-voltageembeddedflashmemory.Keywords:chargepumpcircuit;low-voltage;high-efficiency;embeddedflashmemory,,(SoC)SoC,SoC[1-3]SoC,,90nmSoC,1.2V,(10V),Fowler-Nordheim(FN),[4]SoC,,,,,,[2],,;,,,1低压下传统电荷泵电路面临的挑战Dickson[5],NDickson1C1)CN,CLOADM0)MN,,,:341,1,,,[5],,,,1DICKSON[5]Vout=6Ni=1(Vd-Vt(i))+Vd.(1):N,Vd-Vt(i)i,Vt(i)N--(N-meta-loxide-semiconductor,NMOS),,Vt(i)Vd,2HHNEC130nmeFlashNMOS2Vsb1.2V1.5V,VtVd;(1),,0,,2NMOS,,[6-10]NMOS,,,[6-8],WuChang[6],3,,,,,CLK1CLK2,3,CLK1=0,CLK2=0,N1,N2,N3Vd,2Vd,3Vd,MN2MP2N3N1,Ir,3,Vd,,3Wu-Chang342()2011,51(3)[8-10],,,,,2新型低压高效率电荷泵电路,,;,NMOSPN[11]NMOS4aNMOSN,NMOSB,NPNNMOSPN,NMOS[12],4b,NMOS,NMOS4NMOS4bNMOS,,,,,55(MD1)MD2N),54bNMOS,B,,,,N1CLKB,N2CLK,,5,,,P--(P-meta-loxide-semiconductor,NMOS),;,PMOS,,,,,[6-8],5,:343,6,CLK=0,CLKB=1,CLKBC1,CLKBC3,N1,N3,N1N3N4,M1,M2,N4M2MD3,MD3,N1N3CLK=1,CLKB=0,,MD4,N2N4,CLKCLKB,CLK=0,CLKB=0,N4N3,M2,M4,3,6(MD1)MD2N),,,7NMOS,,N1,N2B1,B1NMOS,CLKB=1,CLK=0,N1N2,MB1,MB2,N2B1;CLKB=0,CLK=1,N2N1,MB1,MB2,N1B1,,B1NMOS,,,7N1N2,,,B1,73HSPICE仿真与结果比较HHNECeFlash130nmHSPICE,15MHz,4pfWu-Chang8,(N1N2,N3N4),(N1N3,N2N4),,,NMOS,B1,,OUT8344()2011,51(3)91.5V,,3,,Wu-Chang,3V,,9N10N=4,,3,,,112V,,104结论,SoCSoC,,,,,,,,,(References)[1]SeoMK,SimSH,OhMH,etal.A130-nm0.9-V66-MHz8-Mb(256K@32)localSONOSembeddedflashEEPROM[J].IEEEJSolid-StateCircuits,2005,40(4):877-883.[2]WeiH,ChengY.Achargepumpcircuitdesignbasedona0135LmBCDtechnologyforhighvoltagedriverapplications[C]//Proc9thIEEESolid-StateandIntegratedCircuitTechnology.Piscataway,NJ,USA:IEEEPress,2008:2035-2038.[3]CombeM,PapaixC,GuichaouaJ,etal.Designofhigh-speed128-bitembeddedflashmemoriesallowinginplaceexecutionofthecode[J].Solid-StateElectronics,2005,49(11):1867-1874.[4]TaoG,ChauveauH,NathS,etal.Aquantitativestudyofendurancecharacteristicsanditstemperaturedependenceofembeddedflashmemorieswith2T-FNFNNORdevicearchitecture[J].IEEETDeviceandMaterialsReliability,2007,7(2):304-309.[5]DicksonJF.On-chiphigh-voltagegenerationinMNOSintegratedcircuitsusinganimprovedvoltagemultipliertechnique[J].IEEEJSolid-StateCircuits,1976,11(3):374-378.[6]WuJT,ChangKL.MOSchargepumpforlow-voltageoperation[J].IEEEJSolid-StateCircuits,1998,33(4):592-597.[7]KerMD,ChenSL,TsaiCS.Designofchargepumpcircuitwithconsiderationofgate-oxidereliabilityinlow-voltageCMOSprocesses[J].IEEEJSolid-StateCircuits,2006,41(5):1100-1107.[8]PanF,SamaddarT.ChargePumpCircuitDesign[M].TwoPennPlaza,NY,USA:McGraw-HillProfessional,2006.[9]UmezawaA,AtsumiS,KuriyamaM,etal.A5V-onlyoperation0.6LmflashEEPROMwithrowdecoderschemeintriple-welltechnology[J].IEEEJSolid-StateCircuits,1992,27(11):1540-1546.[10]YanN,MinH.High-efficiencyal-lPMOSchargepumpforlowvoltageoperations[J].IEEEElectronicsLetters,2006,42(5):277-279.[11]TsiatouhasY.Astress-relaxednegativevoltage-levelconverter[J].IEEETCircuitsandSystemsII,2007,54(3):282-286.[12]YamazoeT,IshidaH,NihongiY.Achargepumpthatgeneratespositiveandnegativehighvoltageswithlowpower-supplyvoltageandlowpowerconsumptionfornon-volatilememories[C]//ProcIEEEInternationalSymposiumonCircuitandSystems.Piscataway,NJ,USA:IEEEPress,2009:988-991.