适合低功耗工作的MOS电荷泵

:1999-05-31,　:1999-08-1130220004MicroelectronicsVol.30,№2Apr.2000:1004-3365(2000)02-0136-05MOS徐志伟,肖　斌,闵　昊,郑增钰(　,　200433)　　:　提出了两种适合在低功耗条件下工作的电荷泵电路,预充电电荷泵采用预充电机制提高了电荷泵的工作效率;而Domino电荷泵则采用内部电路控制电荷泵充电电容的充放电,不仅降低了功耗,同时均化了瞬态功耗。这解决了电荷泵在充电期间功耗过大的问题,使它们不仅能适用于有较强电源的电路,也可以在无源或低功耗的环境下工作。:　MOSIC;高压产生器;电荷泵;预充电式电荷泵;Domino电荷泵:　TN432:　B　MOSChargePumpsforLowPowerDissipationOperationXUZhi-wei,XIAOBin,MINGHao,ZHENGZeng-yu(StateKeyLabofASIC&Systems,FudanUniversity,Shanghai200433)Abstract:　TwotypesofnovelMOSchargepumpsforlowpowerapplicationsarepresented.Thepre-chargingMOSchargepumpusespre-chargingmechanismtoachievehighefficiency,whileDominochargepumpemploysacomparisoncircuittocontrolthechargingprocessofthechargingcapacitor,whichnotonlylowersthepowerdissipationofthecircuit,butalsoaveragesitstransientpowerdissipation.Thesetwochargepumpsaresuitableforcircuitswithlargepowersupply,andtheycanalsooperateinpassiveandlowpowersystems.Keywords:　MOSIC;Chargepump;High-voltagegenerator;Pre-chargingchargepump;DominochargepumpEEACC:　2570D,2570F1　引　言,,[1],。,,3V,。,IC,,,,[2]。,EEPROM,,,。2　电荷泵电路原理与结构MOSDickson1976[3],MOSDickson,。CK1CK2,。,,;MOS[3,4],iVcc-Vth,i;。C(Vcc-Vth),VhhTclkRload;,。,:Vhh=min[VBreakDown,RloadCloadTClk(Vcc-VthMax),NVcc-∑Ni=1Vth,i](1),　2:MOS137　,;,,,。,MOS、,。,,,,。1,Dickson、。1　　　,。2,C1Q1,C2Q2,Vcc+Q1/C1-VthQ2/C2,,CK1,CK2,C1C2,C2[2Q1+Q2+C1Vcc-C1Vth]-C1Q2C1+C2(2)2　　　,,,;。、MOS。,,,,,。,。(3):　　Z=×100%(3)Dickson,,,。,,RC:　　RMOSCTClk2(4),RMOSMOS,C,TClk;,,。。3　　　3,RC,RCRbufRinv。RC(Rbuf+Rinv+Rall)Call,,Call=∑Ni=1Ci,RallMOS。:(Rbuf+Rinv)CallRallCall=2RMOSC(5)Rbuf+Rinv2RMOSN(6),N。RbufRinv,Rbuf=Rinv,:Rbuf=RinvRMOSN(7);,,。(8):PClockGenerator=PDynamic+PStatic+PLeak(8)CMOS,PstaticPLeak,　138:MOS2000　PDynamic:PDynamic=PShortThrough+PChargingDischarging(9),CMOS,PChargingDischarging,PShortThrough;[5],4。4　CMOS　　。EEPROM,[6],,。,,,。,。,Dickson,,,。3　预充电式电荷泵,,。,,5。5　,,Q=C×(Vcc-Vth)。,,,。6。;,。,,,,,,,。6　　　7,。,,C(Vcc-Vth),。7　　　,,;,。,NMOS　2:MOS139　,Vcc,。PMOS,Q=CVcc。,,PMOSVhh,,Vcc,。8,Vhh,Vcc,;Enable,M2AVhh,M3,,Vout0V,PMOS;Enable=1,M1A,M3,A,Vout=Vhh,PMOS。8　　　PMOS,;PMOS,PMOSNMOS,,,。4　Domino电荷泵,,,[2]。,,RC,,,,。9　Domino　　9Domino,,,,。,iVhh,i,i+1,。,12MOS,。,,,。10　Domino　　10Domino。,50%,;,。,,。,。iVhh,i,M=Vhh,iVcc。CMCInvInput,iMM+1C1M+1C,,11。,。11　　140:MOS2000　NMOSPMOS;。5　电荷泵电路的电平稳定器,。,;,。,,。6　结　论,,。,,;,,。Domino,,,,,、。[][1]KawaharaT,KobayashiY,JyounoS,etal.Bitlineclampedsensingmultiplexandaccuratehighvoltagegeneratorforquarter-micronflashmemories[J].IEEEJSolStaCirc.1996;31:1590～1600.[2]MasuiS,IshiiE,IwawakiT,etal.A13.56MHzCMOSRFidentificationtransponderintegratedcircuitwithadedicatedCPU[A].ISSCCDigestofTechnicalPapers[C],1999.162～163.[3]DicksonJF.On-chiphigh-voltagegenerationinNMOSintegratedcircuitsusinganimprovedvoltagemultipliertechnique[J].IEEEJSolStaCirc,1976;11:374～378.[4]WuJT,ChangKL.MOSchargepumpsforlow-voltageoperation[J].IEEEJSolStaCirc,1998;33:592～597.[5]YeapG.PracticallowpowerdigitalVLSIdesign[M].KluwerAcademicPublishers,1998.[6]OtoDH,DhamV,GudgerKH,etal.High-voltageregulationandprocessconsiderationsforhigh-density5V-onlyEEPROM′s[J].IEEEJSolStaCirc,1983;18:532～537.:　(1975～　),男,汉族,江苏人,1997年7月于复旦大学电子工程系获理学学士学位,1997年9月起在复旦大学专用集成电路与系统国家重点实验室攻读硕士学位,主要研究方向为数模混合电路、A/D转换器和无线通讯电路。(上接第129页)[][1],.(IC)[M].:,1996.221.[2].[M].:,1996.[3]KaiserU,SteinhagenW.Alow-powertransponderICforhigh-performanceidentificationsystems[J].IEEEJSolStaCirc,30(3):306～310.[4]AdamC.AmagneticpowerandcommunicationinterfaceforaCMOSdie[A].ISSCCDigestofTechnicalPapers[C],1988:264～265.[5]VittozE.MOStransistorsoperatedinthelateralbipolarmodeandtheirapplicationinCMOStechnology[J].IEEEJSolStaCirc,1992;18:273～279.　:　　(1975.10～　),　女,汉族,山东菏泽人,1997年毕业于复旦大学电子工程系微电子专业,1997年至今在中科院上海冶金研究所IC设计中心攻读硕士学位,主要从事MCU及RF模拟电路的设计。