Power-MOS-Process-Flow-Etch

P.1PowerMOSprocessflow(Etchrelated)P.2ProcessstagerelativetoEtchbyproducttypeSTAGEIDTITLEEQPTYPEDRAMLayerGRETCHdescumACPHOTODESCUMEAACKRR,M0BAACETCHdescumACPHOTODESCUMEAACKRR,M1BATRMOETCHTRMOETCHEDMDTMOTRSIETCHTRSiETCHEDPD14DTEtchGCETCH_PGCETCHEPMPolyHMCTETCH_PCTOXETCHEBOCSEtchCTETCH_PTRCTSiETCHEAAAAMOCTWEBCTWETCHBACKEZZD14DTEtchM1ETCH_PM1ETCHEM2M2EtchTVETCH_PTVETCHETVC2EtchACETCH_PACPRPLASMASTRIPEOATRMOETCHTRMOPRSTRIPEOAGCETCH_PGCPRSTRIPEOACTETCH_PCTPRSTRIPEOACTWEBCTPOSTETCHBAKEEOMTVETCH_PTVPRSTRIPEOMFront-endPRstripBack-endPRstripSTAGEIDS2AS2CS2DS2FS2GS2IPatternTypeSquareSquareSquareStripSquareStripGRdescumXXXXXVACdescumVVVVVVTRMOETCHVVVVVVTRSIETCHVVVVVVGCETCH_PVVVVVVCTETCH_PVVVVVVCTETCH_PVVVVVVCTWEBVVVVVXM1ETCH_PVVVVVVTVETCH_PVVVVVXGRPRStripXXXXXVACPRStripVVVVVVTRMOETCHVVVVVVGCETCH_PVVVVVXCTETCH_PVVVVVVCTWEBVVVVVXTVETCH_PVVVVVXP.31P1MPOWERNMOSFETEPI(N-/Phosphorusdopant/0.13,0.17&0.2ohm-cm)WaferStart*LASERMARKING*INITIALOXPRE-CLN(HAB)Substrate(N+TYPE/Asdopant/2.2E19cm3)4.0~4.5um52.886um784.681umP.41P1MPOWERNMOSFETInitialOX*INITIALOXIDATION(6KA,followPromosrecipe,1000C)*POSTINITIALOXPLY*INITIALOXTHKMEAS.oxideP.51P1MPOWERNMOSFETACPhoto&ACWETEtchoxide*ACPHOTO(I-Line,CD1.2~3um,monitorCDbarforreference)*ACPHOTODESCUM*INITIALOXWETETCH(BHF)(scribelineox20A)-ACPRPLASMASTRIP-ACETCHPOSTCLN(SPM/HA)PRP.61P1MPOWERNMOSFETTrenchHMDepoxide*TRENCHTEOSHMDEP.(5KA)*TRENCHTEOSHMANNEAL(ref:850C,15min)(MVIref:LPTEOShardmaskox4~6K)TEOSP.71P1MPOWERNMOSFETTrenchPhoto&HMEtch*TRPHOTOBARLCOATING*TRPHOTO(definestheTrenchareas,DUV,CD200+-20nm)*TRMOETCHoxideTEOSPRP.8PatterntypeofTRSquaretypeStriptypeNotchNotchP.9TopviewofTRMOwithtiltingangleTRMOCross-sectionTRMOoxideEtchwithSquarepatternP.101P1MPOWERNMOSFETTrenchSiEtch*TRMOPRSTRIP*TRMOETCHPOSTCLN(SPM/HA)*TRSiETCH(1.0~2.4um,SiDepth)*TRETCHPOSTCLN(SPM/HA)(MVIref:SPM+1%HF2min,thenSPM+APM)oxideTEOSSourcePADGatePADP.11SquaretypeStriptypePatterntypeofTRNotchNotchP.12173nm89o152nm170nm152nm89o161nm89o152nmTRsiliconEtchwithSquarepattern(Target=1.4um)P.13TRsiliconEtchwithStrippattern(Target=1.5um)288nm243nm283nm263nm1,543nm258nm89o273nm238nm268nm243nm1,601nm253nm268nm228nm268nm253nm1,622nm248nm89o89oP.141P1MPOWERNMOSFETSACOX&HMRemove*SACOXPRE-CLN(HA/DHF/HAB)*SACOXIDATION(forcornerrounding:followMVIrecipe)1150C/1250A/DryOX*SACOXANDHMOXREMOVE(BHF)*REMAINNATIVEOXTHKMEAS.(scribeline20A)*REMAININITIALOXTHKMEAS.(etchpad3200A)oxideP.151P1MPOWERNMOSFETGateOxidationoxide*GATEOXPRE-CLN(HA/DHF/HAB)*GATEOXIDATION200~700A(dependonapplication)(followMVIrecipe,1000Cdry)P.161P1MPOWERNMOSFETDopedPolyDepoxide*DOPEDPOLYDEP.(8000A,Pinsitufollow0.17DRAMCBpolyrecipe)PolyP.171P1MPOWERNMOSFETGCPhoto&EtchoxidePoly*GCPHOTO(2um,monitorCDbarforreference)*GCETCH(RSC1500A)*GCPRSTRIP*GCETCHPOST-CLN(SPM/DHF)(CHANGECASSETTE)(MVIref:SPM+1%HF,timebaseonGoxthk)*POSTGCETCHREMAINGOXTHKMEAS.(200A)P.18PolySiliconGCEtchPolyrecessintrenchPolyThickness~8Kor12KPolyGatePadGatePadGatePadP.19PolyGatePad91nmGCEtchwithSquarepattern(Polyfreeinwafersurface)CutNotchP.201P1MPOWERNMOSFETP-BodyblanketImpoxidePoly*P-BODYIMPLANT(B)(followMVIrecipe)*P-BODYIMPPOSTCLN(SPM/HA)*P-BODYIMPANNEAL(1150C,followMVIrecipe)*ANNEALTHKMEAS.(T/W)(100,700A)*ANNEALOXREMOVE(DHF200:1followPromosrecipe)*REMAINOXTHKMEAS.(200A)P.211P1MPOWERNMOSFETXNPhoto&ImpoxidePoly*XNPHOTO(CD2um)*XNIMPLANT(As)(As/60K/8e15)-XNPRPLASMASTRIP-XNIMPPOSTCLN(SPM/HA)-XNIMPANNEAL(followMVIrecipe,950C110min~30min)-ANNEALTHKMEASURE(T/W)(40Aor500Abyrecipe)PRP.221P1MPOWERNMOSFETILDDepoxidePoly*BARRIERPESiODEP(2kASi-RichOX)*BPSGDEP.(MVIref:11K)*BPSGFLOW(MVIref:900C,N215min)*BPSGETCHBACK(removeBPSG5.7kAbywetsink)*AFTERETCHBSGTHKMEASURE(7300A:2kASi-rich+5.3KABPSG)Si-richoxBPSGP.231P1MPOWERNMOSFETCTPhoto&Etch*CTPHOTO*CTOXETCH*TRCTSiETCH(SiLoss0.3~0.4um)*CTPRSTRIP*CTETCHPOSTCLN(SPM/HA)*CTETCHCDMEAS.oxidePolySi-richoxBPSGvP.24PolySiliconContactEtchContactEtchOxideEtchinsiliconareaOxideP-siliconP-bodyimplantPolyGatePadPolyGatePadBPSGGatePadSquareTypeStripTypeGatePadP.25CTOxideEtchinEBO520nm524nm480nm421nm560nm187nm314nmCTsiliconEtchinEAACTcontactEtch–OxideandsiliconEtchwithsquarepatternBPSGGatePadCutNotchCellCOCD0.4umP.26BPSGGatePadCTsiliconEtchinEAANotchCutCTcontactEtch–OxideandsiliconEtchwithStrippatternP.271P1MPOWERNMOSFETCTImp&Anneal*CTIMPLANT(BF2)(followMVIrecipe)*CTIMPPOSTCLN(SPM/HA)*CTIMPANNEAL(MVIref:RTA1000C,15sec)oxidePolySi-richoxBPSGP.281P1MPOWERNMOSFETCTWPlug&Etchback*TILINERSPUTTERDIP(BHF)*TILINERSPUTTER*TILINERANNEAL*WPLUGDEP.(6KA?)*CHANGEMETALCASSETTE&POD*CTWETCHBACK(dryetch,makesurew/oWresidue)*CTPOSTETCHBAKE(150C,1min)*POSTWETCHBACKSCR-JETCLN(DIW)oxidePolySi-richoxBPSGWEPD,retrofitAMTHARTP.29TungstenEtchCTTungstenEtchBackBPSGGatePadTungsten/Ti/TiNTi/TiNGatePadTi/TiNGatePadBPSGGatePadTungsten/Ti/TiNSquareTypeStripTypeP.30TungstenEtchback–WetchrecessTi/TiNGatePadBPSGGatePadTungsten/Ti/TiNCutNotchWEtchP.311P1MPOWERNMOSFETM1Dep&Photo&Etch*M1METALSPUTTER(Al/Cu30~40KA)*M1PHOTO(CD5um,Space4um)*M1ETCH*M1ETCHPOSTCLN(ACT)oxidePolySi-richoxBPSGWAl/CuGatePadSourcePADP.32Ti/TiNGatePadMetal(Al/Cuor