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PL2300GD1PRODUCTSUMMARYVDSSIDRDS(on)(m-ohm)Max20V5.430@VGS=4.5V4.346@VGS=2.5VParameterSymbolLimitUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±12VDrainCurrent-Continuousa@TA=25°CbID5.4AIDM21.5AaDrain-SourceDiodeForwardCurrentIS1.7AMaximumPowerDissipationaTA=25°CPD1.25WTA=75°C0.75OperatingJunctionandStorageTemperatureRangeTJ,TSTG-55to150°CPULANTECHNOLOGYCO.,LTDN-ChannelHighDensityTrenchMOSFETFEATURES●SuperhighdensecelltrenchdesignforlowRDS(on).●Ruggedandreliable.●SurfaceMountpackage.DSOT23-3GSABSOLUTEMAXIMUMRATINGS(TA=25°Cunlessotherwisenoted)-PulseTHERMALCHARACTERISTICSaThermalResistance,Junction-to-AmbientRthJA100°C/WNotea.SurfaceMountedonFR4Board,t≤10sec.b.Pulsewidthlimitedbymaximumjunctiontemperature.DGSDDSG2ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)ParameterSymbolConditionMinTypcMaxUnitOFFCHARACTERISTICSDrain-SourceBreakdownVoltageBVDSSVGS=0V,ID=250uA20VZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V1uAGate-BodyLeakageIGSSVGS=12V,VDS=0V100nAbONCHARACTERISTICSGateThresholdVoltageVGS(th)VDS=VGS,ID=250uA0.60.831.5VDrain-SourceOn-StateResistanceRDS(on)VGS=4.5V,ID=5.4A2530m-ohmVGS=2.5V,ID=4.3A3446bDRAIN-SOURCEDIODECHARACTERISTICSDiodeForwardVoltageVSDVGS=0V,IS=1.7A1.2VcDYNAMICCHARACTERISTICSInputCapacitanceCISSVDS=8V,VGS=0Vf=1.0MHz512pFOutputCapacitanceCOSS130pFReverseTransferCapacitanceCRSS105pFcSWITCHINGCHARACTERISTICSTurn-OnDelayTimetD(ON)VDD=10V,ID=3AVGEN=4.5VRL=3.3ohmRGEN=6ohm9.8nsRiseTimetr3.8nsTurn-OffDelayTimetD(OFF)21nsFallTimetf5.2nsTotalGateChargeQgVDS=10V,ID=3AVGS=4.5V5.7nCGate-SourceChargeQgs1.6nCGate-DrainChargeQgd1.3nCNoteb.PulseTestPulsewidth≤300us,DutyCycle≤2%.c.Guaranteedbydesign,notsubjecttoproductiontesting.PL2300GD3VGS=4~10VVGS=3VVGS=2VID=250uAVGS=4.5VID=5.4AVth,NormalizedGate-SourceThresholdVoltageBVDSS,NormalizedGate-SourceBreakdownVoltageID,DrainCurrent(A)VGS,GatetoSourceVoltage(V)RDS(on),NormalizedOn-ResistanceID,DrainCurrent(A)2520201615121085400012345600.511.52.02.53.0VDS,Drain-to-SourceVoltage(V)Figure1.OutputCharacteristicsVGS,Gate-to-SourceVoltage(V)Figure2.TransferCharacteristics1.121.0751.751.051.51.0251.25110.9750.750.950.50.925-50-250255075100125Tj,JunctionTemperature(°C)Figure3.BreakdownVoltageVariationwithTemperature0.25-50-250255075100125Tj,JunctionTemperature(°C)Figure4.On-ResistanceVariationwithTemperature1.31.21.110.90.80.710ID=250uAVDS=10VID=3A86420.6-50-2502550751001250024681012Tj,JunctionTemperature(°C)Qg,TotalGateCharge(nC)Figure5.GateThresholdVariationwithTemperatureFigure6.GateChargePL2300GD4r(t),NormalizedEffectiveTransientThermalImpedanceID,DrainCurrent(A)IS,Source-DrainCurrent(A)4020.00201010.000.001S10.01S0.10.04VGS=4.5VSinglePulseTA=25C0.1SDC1.000.111020500.700.800.890.971.041.11VDS,Drain-SourceVoltage(V)Figure7.MaximumSafeOperatingAreaVSD,BodyDiodeForwardVoltage(V)Figure8.BodyDiodeForwardVoltageVariationwithSourceCurrentVDDRLDVoutVDS90%VGSVinRGENGS10%VGStd(on)trtd(off)tfFigure9.SwitchingTestCircuitandSwitchingWaveforms21DutyCycle=0.50.20.10.10.05PDMt1t20.010.02SinglePulse1.RthJA(t)=r(t)*RthJA2.RthJA=SeeDatasheet3.TJM-TA=PDM*RthJA(t)4.DutyCycle,D=t1/t210-410-310-210-111030SquareWavePulseDuration(sec)Figure10.NormalizedThermalTransientImpedanceCurvePL2300GD