HN0501DescriptionTheHN0501usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.GeneralFeatures●VDS=100V,ID=5ARDS(ON)145Ω@VGSΩ)●HighdensitycelldesignforultralowRdson●Fullycharacterizedavalanchevoltageandcurrent●ExcellentpackageforgoodheatdissipationApplication●Powerswitchingapplication●Hardswitchedandhighfrequencycircuits●LEDSOT23-3LviewAbsoluteMaximumRatings(TA=25℃℃℃℃unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS100VGate-SourceVoltageVGS±20VDrainCurrent-ContinuousID5ADrainCurrent-Pulsed(Note1)IDM20AMaximumPowerDissipationPD2.5WOperatingJunctionandStorageTemperatureRangeTJ,TSTG-55To150℃ThermalCharacteristicThermalResistance,Junction-to-Ambient(Note2)RθJA50/W℃ElectricalCharacteristics(TA=25℃unlessotherwisenoted)ParameterSymbolConditionMinTypMaxUnitOffCharacteristicsDrain-SourceBreakdownVoltageBVDSSVGS=0VID=250μA100110-VZeroGateVoltageDrainCurrentIDSSVDS=100V,VGS=0V--1μA:Page1DGSSchematicdiagram=10V(Typ:135mmGate-BodyLeakageCurrentIGSSVGS=±20V,VDS=0V--±100nAOnCharacteristics(Note3)GateThresholdVoltageVGS(th)VDS=VGS,ID=250μA1.21.82.5VDrain-SourceOn-StateResistanceRDS(ON)VGS=10V,ID=5A-135145mΩForwardTransconductancegFSVDS=5V,ID=2.9A-8-SDynamicCharacteristics(Note4)InputCapacitanceClss-690-PFOutputCapacitanceCoss-120-PFReverseTransferCapacitanceCrssVDS=25V,VGS=0V,F=1.0MHz-90-PFSwitchingCharacteristics(Note4)Turn-onDelayTimetd(on)-11-nSTurn-onRiseTimetr-7.4-nSTurn-OffDelayTimetd(off)-35-nSTurn-OffFallTimetfVDD=30V,ID=2A,RL=15ΩVGS=10V,RG=2.5Ω-9.1-nSTotalGateChargeQg-15.5nCGate-SourceChargeQgs-3.2-nCGate-DrainChargeQgdVDS=30V,ID=3A,VGS=10V-4.7-nCDrain-SourceDiodeCharacteristicsDiodeForwardVoltage(Note3)VSDVGS=0V,IS=6A--1.2VDiodeForwardCurrent(Note2)IS--6ANotes:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature.2.SurfaceMountedonFR4Board,t≤10sec.3.PulseTest:PulseWidth≤300μs,DutyCycle≤2%.4.Guaranteedbydesign,notsubjecttoproductionPage2HN0501TestCircuit1))))EAStestcircuit2))))Gatechargetestcircuit3))))SwitchTimeTestCircuitPage3HN0501TypicalElectricalandThermalCharacteristics(curves)Figure1.Source-DrainDiodeForwardVoltageFigure2.SafeoperatingareaFigure3.OutputcharacteristicsFigure4.TransfercharacteristicsFigure5.Staticdrain-sourceonresistanceFigure6.RDS(ON)vsJunctionTemperaturePage4HN0501Figure7.BVDSSvsJunctionTemperatureFigure8.VGS(th)vsJunctionTemperatureFigure9.GatechargewaveformsFigure10.CapacitanceFigure11.NormalizedMaximumTransientThermalImpedancePage5HN0501