IRF7726中文资料

HEXFET®PowerMOSFET12/21/00IRF7726AbsoluteMaximumRatings@TA=25°CContinuousDrainCurrent,VGS@-10V-7.0ID@TA=70°CContinuousDrainCurrent,VGS@-10V-5.7AIDMPulsedDrainCurrent
-28PD@TA=25°CMaximumPowerDissipation1.79WPD@TA=70°CMaximumPowerDissipation1.14WLinearDeratingFactor0.01W/°CVGSGate-to-SourceVoltage±20VTJ,TSTGJunctionandStorageTemperatureRange-55to+150°CPD-94064VDSSRDS(on)maxID-30V0.026@VGS=-10V-7.0A0.040@VGS=-4.5V-6.0AParameterMax.UnitsRθJAMaximumJunction-to-Ambient70°C/WMICRO-8DescriptionUltraLowOn-ResistanceP-ChannelMOSFETVerySmallSOICPackageLowProfile(1.2mm)AvailableinTape&ReelHEXFET®PowerMOSFETsfromInternationalRecti-fierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextremelyefficientandreliabledeviceforbatteryandloadmanagement.ThenewMicro8package,withhalfthefootprintareaofthestandardSO-8,providesthesmallestfootprintavailableinanSOICoutline.ThismakestheMicro8anidealdeviceforapplicationswhereprintedcircuitboardspaceisatapremium.Thelowprofile(1.2mm)oftheMicro8willallowittofiteasilyintoextremelythinapplicationenvironmentssuchasportableelectronicsandPCMCIAcards.TopView81234567DDDGSADSSIRF77262(BodyDiode)showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)
p-njunctiondiode.VSDDiodeForwardVoltage––––––-1.2VTJ=25°C,IS=-1.8A,VGS=0VtrrReverseRecoveryTime–––3553nsTJ=25°C,IF=-1.8AQrrReverseRecoveryCharge–––3248µCdi/dt=-100A/µsSource-DrainRatingsandCharacteristics––––––––––––-28-1.8AParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage-30––––––VVGS=0V,ID=-250µA∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––0.016–––V/°CReferenceto25°C,ID=-1mA––––––0.026VGS=-10V,ID=-7.0A––––––0.040VGS=-4.5V,ID=-6.0AVGS(th)GateThresholdVoltage-1.0–––-2.5VVDS=VGS,ID=-250µAgfsForwardTransconductance10––––––SVDS=-10V,ID=-7.0A––––––-15VDS=-24V,VGS=0V––––––-25VDS=-24V,VGS=0V,TJ=70°CGate-to-SourceForwardLeakage––––––-100VGS=-20VGate-to-SourceReverseLeakage––––––100VGS=20VQgTotalGateCharge–––4669ID=-7.0AQgsGate-to-SourceCharge–––8.0–––nCVDS=-15VQgdGate-to-Drain(Miller)Charge–––8.1–––VGS=-10Vtd(on)Turn-OnDelayTime–––1523VDD=-15V,VGS=-10VtrRiseTime–––2538ID=-1.0Atd(off)Turn-OffDelayTime–––227341RG=6.0ΩtfFallTime–––107161RD=15ΩCissInputCapacitance–––2204–––VGS=0VCossOutputCapacitance–––341–––pFVDS=-25VCrssReverseTransferCapacitance–––220–––ƒ=1.0MHzElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)IGSSµAΩRDS(on)StaticDrain-to-SourceOn-ResistanceIDSSDrain-to-SourceLeakageCurrentnAnsNotes:
Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.Pulsewidth≤400µs;dutycycle≤2%.SDGWhenmountedon1inchsquarecopperboard,t10sec.IRF7726(V)0.010.1110100-ID,Drain-to-SourceCurrent(A)-2.5V20µsPULSEWIDTHTj=25°CVGSTOP-10.0V-4.5V-3.7V-3.5V-3.3V-3.0V-2.7VBOTTOM-2.5V0.1110100-VDS,Drain-to-SourceVoltage(V)0.1110100-ID,Drain-to-SourceCurrent(A)-2.5V20µsPULSEWIDTHTj=150°CVGSTOP-10.0V-4.5V-3.7V-3.5V-3.3V-3.0V-2.7VBOTTOM-2.5V-60-40-200204060801001201401600.00.51.01.52.0T,JunctionTemperature(C)R,Drain-to-SourceOnResistance(Normalized)JDS(on)°

V=I=GSD-10V-7.0A0.11101002.03.04.05.06.0
V=-15V20µsPULSEWIDTHDS-V,Gate-to-SourceVoltage(V)-I,Drain-to-SourceCurrent(A)GSD
T=150CJ°
T=25CJ°IRF77264(nC)-V,Gate-to-SourceVoltage(V)GGS
I=D-7.0A
V=-15VDSV=-24VDS0.11101000.01.53.04.56.0-V,Source-to-DrainVoltage(V)-I,ReverseDrainCurrent(A)SDSD
V=0VGS
T=150CJ°
T=25CJ°1101000.1110100
OPERATIONINTHISAREALIMITEDBYRDS(on)
SinglePulseTT=150C=25C°°JC-V,Drain-to-SourceVoltage(V)-I,DrainCurrent(A)I,DrainCurrent(A)DSD
100us
1ms
10ms1101000400800120016002000240028003200-V,Drain-to-SourceVoltage(V)C,Capacitance(pF)DS
VCCC====0V,CCCf=1MHz+C+CCSHORTEDGSissgsgd,dsrssgdossdsgd
Ciss
Coss
CrssIRF7726(C)-I,DrainCurrent(A)°CD0.11101000.00010.0010.010.11101001000
Notes:1.DutyfactorD=t/t2.PeakT=PxZ+T12JDMthJAA
PttDM12t,RectangularPulseDuration(sec)ThermalResponse(Z)1thJA0.010.020.050.100.20D=0.50
SINGLEPULSE(THERMALRESPONSE)VDSVGSPulseWidth≤1µsDutyFactor≤0.1%RDVGSVDDRGD.U.T.+-VDS90%10%VGStd(on)trtd(off)tfFig10b.SwitchingTimeWaveformsFig10a.SwitchingTimeTestCircuitIRF77266