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--0.18umLogicProcessFlow0.180.18umLogicProcessFlowumLogicProcessFlowProcessCross-SectionContent:1.STI/TrenchIsolation2.WellDefinition/VtAdjust3.DualGateFormation4.N/PMOSFormation5.SalicideFormation6.DeviceSchemeSummary7.ILDLayer/ContactWplug8.Metal/VIA9.TopMetal/PassivationDate:Jan14Date:Jan14--20032003--?Waferstart:1.Ptype8~12ohm-cm2.Startoxide350A3.55degreemarkshielding4.Lasermark/scrubber?Padoxide:1.StartoxremovePurpose:2.AAPreClean(H2SO4/HF/APM/HPM)1.Increaseadhesion3.Padoxide110A2.ReleaseSiNstresss?SiNDeposition:1.SiN1625AFOX:Bird’sbeakSTI:AAphwindow?AAPhoto:1.SiON320AO2oxidation,preventfooting2.Mask1203.ODADI/CD(0.22umTCD;0.23+-0.02um)?AASiEtch:1.SiN/Ox;Sietch(3500A,80degree)2.AEI/Polymerdip(100:1HF30sec)3.PRstripping(H2SO4+H2O2)4.Hardbake/AEICD(TCD;0.25+-0.02um)?LiningOxide:1.PreClean(H2SO4/HF/APM/HPM)Cornerrounding2.Liningoxide200A(1000oCdryO2)Recoverdamagebyetch3.Hightempanneal(1100C120M)?TrenchOxide:1.HDPoxide5800A2.STDclean2.HDPOXRTA(1000C,20sec,N2)DensifyOXPadoxidePSubstrate1.STI/TrenchIsolation1.1.1.STI/TrenchIsolationSTI/TrenchIsolationSTI/TrenchIsolationODSiN--0.44/0.280.22/0.28(TL)0.18/0.28(TK)--?ARPhoto:1.Mask121ReduceSTICMPloading2.ADI/overlap(V21_20)(AR/AA=+-0.1um)ImprovedishingonSTI•ARetch:1.Oxideetch(SiNloss200A)2.PRstripping/AEI3.MeasureTHKpre-CMP(6000+-300A)•Trench-CMP:1.OxideCMP2.DIW-HFclean3.MeasureTHKpost-CMP(3400+-400A)1.STI/TrenchIsolation1.1.1.STI/TrenchIsolationSTI/TrenchIsolationSTI/TrenchIsolation-Continue...PadoxidePSubstrateODSiNHDPCVDAfterARetch:--?SiNremove:1.Si3N4remove(50:1HF60sec+175oCH3PO460min)2.Measureoxide(Oxide120A)3.Padoxideremove(50:1HF2.5min;E/R=55A/min)?SACoxide:1.Preclean(H2SO4/HF/APM/HPM)Improveimpchanneleffect2.SACoxide(Dry110A,920oCO2)IncreaseGOXquality1.STI/TrenchIsolation1.1.1.STI/TrenchIsolationSTI/TrenchIsolationSTI/TrenchIsolation-Continue...PSubstratePostSACoxideremove--?PwellPhoto:1.Mask1912.Overlay(V91_20)(PW/ODoverlay+-0.1um)?PwellImplant:1.PwellB11(B160K15E3T00)Preventnoise/latchup?NAPTImplant:1.NAPTB11(B025K55E2T00)PreventS/Ddepletionpunchthroughforshortchanneldevice?VTNImplant:1.VTIMPIn113(D170K70E2T00)AdjustVt,impBoron?Vtup2.PRstrippingimpPhorourus?Vtdown?NWellPhoto:1.Mask1922.Overlay(V92_20)(NW/ODoverlay+-0.1um)?NwellImplant:1.NwellP31(P440K15E3T00)?NAPTImplant:1.PAPTP31(P140K50E2T00)?VTPImplant:1.VTPA75(A130K11E3T00)2.PRstripping?DamageAnneal:1.STDclean(APM/HPM)Activateimpuritytomove2.ImpDamageAnneal(1000oC,10sec,N2)RecoverSiatomtooriginalpositionPSubstrate2.WellFormation/VtAdjust2.2.2.WellFormation/WellFormation/WellFormation/VtVtVtAdjustAdjustAdjustPwell191maskPwellNAPTVTNB11Pwell/NAPT/VTNImplantNwell192maskP31Nwell/P_APT/VTPImplantNwellPAPTVTP--?Oxideremove:1.OxideDip(50:1HF2.5min;E/R=55A/min)2.Measureoxide(3250+-400A)?Gateoxide-1:1.Preclean(H2SO4/HF/APM/HPM)2.Gateoxide50A(800oC,Wet,O2;50+-4A)?Dual_gatePhoto:1.Mask1322.Gateoxideremove(50:1HF75sec;E/R=55A/min)3.Caro’sstrip(H2SO4+H2O2)4.Trenchoxidemeasure(3150+-400A)?Gateoxide-2:1.Preclean(H2SO4/APM/HPM)2.Gateoxide32A(750oC,WetO2;32+-2.5A)3.Polydeposition(620oC2000A,Undopedpoly)PSubstrate3.DualGateFormation3.3.3.DualGateFormationDualGateFormationDualGateFormationPwellNAPTVTNNwellNfieldPAPTMask132HFWetdipandGrowGateoxide-2AfterPolydeposition--?PolyGatePhoto:1.SiON(BARC,320A)2.Mask1303.ADI/CD/overlap(0.18umTCD0.185+-0.01um;Po/OD:+-0.06um)?PolyGateEtch:1.HardbakeProfile2.PolyetchNopolyresidue3.AEINopitting4.PRstrip/Hardbake6.AEI/CD(0.18umTCD0.185+-0.012um)6.Oxidemeasure(40+-5A)7.SiONmaskremove(50:1HF5sec+H3PO47min.)?Polyoxidation:1.STDclean(APM5m/HPM3m)Cornerrounding&2.PolyOxidation(1015oC,RTO15A)strengthenGOXatpolyedge?NLDDPhoto:1.Mask114?NPocketimp:1.N-pocketimpIn115(D130K25E3T30R445)PreventleakageunderSi?NLDDimp:1.NLDDimpAs75(A003K70E4T00)Good:ImproveHCI2.PRstripBad:ChannelRSupIdsatdown?PLDDPhoto:1.Mask113?P-pocketimp:1.PocketA75(A130K35E3T30R445)2.PLDDimpBF2(F005K27E4T00)3.PRstrip3.DualGateFormation3.3.3.DualGateFormationDualGateFormationDualGateFormation-Continue...PolyNLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyNLDDimplantNLDD114maskPLDD113maskN-pocket/NLDDimplantPLDDimplant--?PLDD-2Photo:1.Mask115?PLDD-2imp:1.PLDDBF2(F040K40E3T00)2.PRstrip?LDD-Drive:1.LDDRTA(950C,10sec)?NLDD-2Pho:1.Mask116?NLDD-2imp:1.NLDD2impP31(P030K50E3T00)2.PRstrip?Spacerdep:1.STDclean(APM5m/HPM3m)2.LiningTEOS(680oC,150+-20A)3.SiNSpacer(650oC,300+-30A)4.CompositeSpacer(680oC,1000+-100A)?SpacerEtch:1.Si3N4Spaceretch2.Caro’/Oxidemeasure(Trenchox=3200+-450A;175+-40A)3.Oxidestrip(HF100:1,1min.)4.N/PMOSFormation4.4.4.N/PMOSFormationN/PMOSFormationN/PMOSFormationPolyPLDDPLDDNLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD197mask(3.3V&1.8V)P-pocket/PLDDimpNLDD116mask(3.3V)NLDD2-1As/NLDD2-2P31imp--•ProcessfeaturesC018spacerC025spacer150ALiningTEOS680C70Aanneal850C300ASiN650C1500ASiN780C1000ALPTEOS680C•Advantage?Lowthermalbudget?LowIoff?Reduceshortchanneleffect•Drawback?ComplicateprocessCompositeSpacerReviewCompositeSpacerReviewCompositeSpacerReviewCompositeSpacerReview--?N+S/DPhoto:1.Mask1982.Overlay(V98-20)(N+/OD=+-0