半导体制程PPT

Outline1.Introduction2.IntegratedCircuitandItsApplication3.HowisICmade?–一种相移振荡器（1.3MHz)–Ge衬底，晶体管及电阻、电容全部由Ge制成(面积约11.1x1.6mm2)–扩散工艺形成晶体管–黑蜡掩蔽腐蚀形成Tr台面结构–用细导线互连证明半导体材料不仅可用于制造分立器件，而且可以制造整个电子电路1958.9.12J.Kilby研制成功第一个半导体集成电路---“SolidCircuit”J.Kilby的发明－“固体电路”Kilby和他1958,7,24的设计MigrationofElectronicsManufacturing•Frominception,electronicmanufacturinghasmigratedgeographicallyfromtheWesttotheEast:fromtheUSandEurope,overtoJapan,throughtheTaiwanarea,Korea,arrivingintheEast:ChinaandIndia.•Theshiftinwaferproductiontypicallylagsbehindtherestofthesupplychain,butChinaandIndiaarenowattheforefrontofICproduction!122000WWICMarketChina6%WWMarketOthers$57.80Japan$37.80U.S.A$57.90$9.8021%WWMarket2005WWICMarket$40.80Others$82.10U.S.A$36.50Japan$33.00China2006WWICMarket26%WWMarketOthers$87.44U.S.A$46.56$62.35Japan$57.05ChinaUS$billionSource:ICinsightsJanuary2007•In2005,China’sICconsumptionreachedUSD$40.8billion,overtakingthetopspotastheworld’slargestregionalICmarketforthefirsttime.•By2010,China’sICmarketisestimatedtoreachUSD$124billionintermsofoverallconsumption.ChinaBecomesWorld’sLargestICMarketALeadingFoundryInTheWorldSMICBeijingSMICShanghaiSMICTianjinTianjinBeijingShanghaiWuhanChengduShenzhenSMICAssembly&Testing(Chengdu)SMICBeijingWuhanXinxin*ChengduCension*提供0.35-0.09微米的制程技术ICIndustryBusinessUnitIDM(IntegratedDeviceManufacturer)Productdesign&sales,Fab&/orICassemblyFabliteProductdesign&Sales,HasFab,butmanufacturelessthan50%productFablessProduct&salesonly,noFab&assemblyhouseFoundryFabonlyNoproductAssemblyhouseICassemblyonlyNoproduct一条龙的集成代工服务DedicatedFullServiceProviderDesignServicesMaskMakingWaferManufacturingWaferProbingAssembly&FinalTestWaferBumpingSOPPLCCTSOPQFPBGAµBGAFlipChipCSP2008-IC技术现状Integrationof108–1010transistorsinachip.Clockfrequencyofmorethan3GHz.Cutofffrequencyof350GHzforSiGebipolar.Massproduction≧90nmAdvancedmanufacturing~65nmManufacturingdevelopment~45nmProcessanddeviceR&D≦32nm.Smallesttransistorrealized---5nmMOSFETOutline1.Introduction2.IntegratedCircuitandItsApplication3.HowisICmade?导体半导体绝缘体半导体材料特性:经掺杂后，可藉由电场(电压)、光、温度、压力、磁场等改变或控制其导电特性。最广为应用的集成电路芯片材料：硅(Silicon,Si)。纯硅导电特性差，可藉掺杂(Doping,将杂质加入硅片中)改变或控制其导电特性。如何掺杂及控制杂质在硅片中分布是半导体重要制程技术之一。半导体Semiconductor分离式电路DiscreteCircuitITANIUMMICROPROCESSOR(1.72BillionTransistors90nm595mm2)Tomakewafers,polycrystallinesiliconismelted.Themeltedsiliconisusedtogrowsiliconcrystals(oringots)thatareslicedintowafers.首先融化多晶硅，生成晶柱，然后切割成晶圆。RawMaterialforWafersAsliceofsemiconductormaterial,processedtohavespecifiedelectricalcharacteristics,especiallybeforeitisdevelopedintoanelectroniccomponentorintegratedcircuit.晶圆上的小颗粒，经过处理后具有特殊电性用途。SemiconductorGlossary半导体术语表Die晶粒Assembledsemiconductorelectroniccomponent.切割封装好的半导体电子元件。Chip晶片、芯片Asmall,thin,circularsliceofasemiconductormaterial,suchasSilicon,onwhichrepeatedintegratedcircuitscanbeformed.半导体物质(如纯硅)小薄圆片，在上面可以形成一个个完整电路Wafer晶圆SiliconTechnology矽(硅)技术6吋(15.24cm)8吋(20.32cm)12吋(30.48cm)1.78倍2.25倍(A)ProductionCapability(生产能力)(B)DesignCapability(设计能力)元件縮小0.18um(微米)0.13um(微米)1um(微米)=百万分之一米（m)=头发的分之一头发的分之一千万芯片分类及应用TypesofICs&Applications应用领域Applications应用领域应用领域SometypesofICs芯片分类DRAM动态随机存储器MPUs微处理器Computer电脑ASIC特定用途集成电路DSPs数字信号处理器Consumer消费Flash闪存存储器EEPROMs电可擦除只读存储器Communi-cation通讯ElectronicPackageFirstlevelpackage(Single-chipmodule)Firstlevelpackage(Multi-chipmodule)Secondlevelpackage(PCBorcard)Thirdlevelpackage(Motherboard)Outline1.Introduction2.IntegratedCircuitandItsApplication3.HowisICmade?BuildinganICChip•Tape-out(usedtobealotofinformation—putontape)•LikeablueprintforwaferproductionHierarchyofICChipMultilevelMetallizationM1ContactVia1M2Via2M3Via3M4IMD3ILDIMD1IMD2BackendprocessFrontendActiveAreaDiffusionBarrier/AdhesionPromoterPlug电晶体(晶体管)MOSFET:Metal-Oxide-SemiconductorField-EffectTransistor连接线晶圆芯片制作概述WaferManufacturingOverview晶柱SiliconIngot芯片Wafer光罩制作/光刻离子植入切割、封装电镀(Die,晶粒)(Chip,晶芯)蚀刻MaskMaking/PhotolithographyIonImplantationAssembly&TestingElectroplatingEtching沉积DepositionPHOTO(黃光)ModuleProcessProcedures(制程步骤):(a)PR_coating(上光阻)光阻见白光即反应用黄光(b)Photo_mask&exposure(上光罩及曝光)(c)CDmeasurement(曝光后量测)简称ADI_CD(d)AfterDevelopInspection(曝光后检查)简称ADIPR:PhotoResist(光阻)(化学物品)CD:CriticalDimension(重要尺寸)Mask(光罩)特殊光线曝光区光阻光阻光阻(1)大小或宽度是否OK?(ADI_CD)(2)光阻是否曝开?(ADI)PHOTO(黄光)Module光阻区(PR)ADI_CDADI_CD光阻区(PR)ETCH(蚀刻)ModuleProcessProcedures(制程步骤):(a)DryEtching(气相蚀刻)化学反应后成气体去除(b)WET_PR_stripping(光阻去除,硫酸槽)(c)CDmeasurement(蚀刻后量測)简称AEI_CD(d)AfterEtchInspection(蚀刻后检查)简称AEI光阻光阻Etchinggas(蚀刻气体)光阻去除(WET)大小或宽度是否OK???(AEI_CD)光阻同时会被吃掉一些Thin-Film(薄膜)ModuleProcessProcedures(制程步骤):(a)Thinfilmdeposition(薄膜沉积,单片)(b)Thicknessmeasurement(沉积厚度量測)(c)Filmtypes(薄膜种类):(i)非导体:oxide(氧化物),nitride(氮化硅)(ii)导体:metal(金属:W,Ti,TiN,Al)Si3N4(氮化硅)SiH4(气)+NH3((气)Si3N4(固)TiCl4(气)+NH3((气)TiN(固)厚度符合要求??CMP(化学机械研磨)ModuleProcessProcedures(制程步骤):(a)ChemicalMechanicalPolishing(化学机械研磨)简称CMP(b)单片研磨(c)主要目的:表面平坦化(d)Thicknessmeasurement(研磨后厚度量測)FilmCMP平坦化厚度符合要求??Diffusion(扩散)ModuleProcessProcedures(制程步骤):(a)Filmdeposition(炉管薄膜沉积,150片)(b)Thicknessmeasurement(沉积厚度量測)(c)Filmtypes(薄膜种类):(i)非导体:oxid