2N4401三极管

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDTO-92Plastic-EncapsulateTransistors2N4401TRANSISTOR(NPN)FEATURESPowerdissipationMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=100μA,IE=060VCollector-emitterbreakdownvoltageV(BR)CEOIC=1mA,IB=040VEmitter-basebreakdownvoltageV(BR)EBOIE=100μA,IC=06VCollectorcut-offcurrentICBOVCB=35V,IE=00.1μAEmittercut-offcurrentIEBOVEB=5V,IC=00.1μAhFE(1)VCE=1V,IC=0.1mA20hFE(2)VCE=1V,IC=1mA40hFE(3)VCE=1V,IC=10mA80hFE(4)VCE=1V,IC=150mA100300DCcurrentgainhFE(5)VCE=2V,IC=500mA40VCE(sat)1IC=150mA,IB=15mA0.4VCollector-emittersaturationvoltageVCE(sat)2IC=500mA,IB=50mA0.75VVBE(sat)1IC=150mA,IB=15mA0.95VBase-emittersaturationvoltageVBE(sat)2IC=500mA,IB=50mA1.2VTransitionfrequencyfTVCE=10V,IC=20mA,f=100MHz250MHzOutputCapacitanceCobVCB=10V,IE=0,f=100KHz6.5pFDelaytimetd15nSRisetimetrVCC=30V,VBE(OFF)=2VIC=150mA,IB1=15mA20nSStoragetimetS225nSFalltimetfVCC=30V,IC=150mAIB1=-IB2=15mA30nSSymbolParameterValueUnitVCBOCollector-BaseVoltage60VVCEOCollector-EmitterVoltage40VVEBOEmitter-BaseVoltage6VICCollectorCurrent-Continuous600mAPCCollectorPowerdissipation0.625WTJJunctionTemperature150℃TstgStorageTemperature-55~+150℃RӨJAThermalResistance,junctiontoAmbient357℃/mWTO-921.EMILTTER2.BASE3.COLLECTORB,Apr,2012【南京南山半导体有限公司—长电三极管选型资料】0.20.40.60.81.01101000.1110100101001000025507510012515001252503755006257501101000.40.60.81.00.111011010010010000123050100150200250110100101001000600VCB/VEBCob/Cib——VBEIC——IChFE——2N4401TypicalCharacteristicsTa=100℃Ta=25℃303COMMONEMITTERVCE=1VCOLLECTORCURRENTIC(mA)BASE-EMITTERVOLTAGEVBE(V)3StaticCharacteristic600Ta=100℃Ta=25℃COMMONEMITTERVCE=1V30030300.3DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)fT——PC——TaCOLLECTORPOWERDISSIPATIONPC(mW)AMBIENTTEMPERATURETa()℃Ta=100℃Ta=25℃β=10600303BASE-EMMITTERSATURATIONVOLTAGEVBEsat(V)COLLECTORCURRENTIC(mA)1f=1MHzIE=0/IC=0Ta=25℃CobCib0.3203CAPACITANCEC(pF)REVERSEBIASVOLTAGEV(V)1030010030COMMONEMITTERVCE=10VTa=25℃TRANSITIONFREQUENCYfT(MHz)COLLECTORCURRENTIC(mA)COMMONEMITTERTa=25℃1.0mA0.7mA0.9mA0.6mA0.5mA0.8mA0.4mA0.3mA0.2mAIB=0.1mACOLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)ICTa=25℃Ta=100℃β=10VBEsat——VCEsat——ICIC60030030303COLLECTOR-EMMITTERSATURATIONVOLTAGEVCEsat(mV)COLLECTORCURRENTIC(mA)B,Apr,2012【南京南山半导体有限公司—长电三极管选型资料】