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0.35umTrenchDMOSprocessintroduction•DMOSintroductionandapplication•TrenchDMOSdevicestructure•Processflowintroduction•MainimportantstepandissuediscussionOUTLINE•DMOSintroductionandapplication•TrenchDMOSdevicestructure•Processflowintroduction•MainimportantstepandissuediscussionDMOS---DoubleDiffusedMOS器件类型特点应用DMOS高压大电流驱动（器件结构决定漏端能承受高压，高集成度可在小面积内做超大W/L）模拟电路和驱动，尤其是高压功率部分，不适合做逻辑处理。CMOS集成度高，功耗低适合做逻辑处理，一些输入，也可做输出驱动Bipolar两种载流子都参加导电，驱动能力强，工作频率高，集成度低模拟电路对性能要求较高部分(高速、强驱动、高精度）DMOSintroductionandapplicationＤＭＯＳＬＤＭＯＳＶＤＭＯＳＴＲＥＮＣＨＤＭＯＳＴＲＥＮＣＨIGBT•LDMOSLaterallydiffusedMOS•VDMOSVerticaldiffusedMOSDMOSintroductionandapplicationUNITCELLSEMTOP-VIEWWIREBONDTrenchDMOSintroductionGatepadSourcepadSOURCEcurrentGATEEPISUBDRAIN•DMOSintroductionandapplication•TrenchDMOSdevicestructure•Processflowintroduction•MainimportantstepandissuediscussionSGN+N-DUGSLwhenUGSUTthechannelchangeasNtypeInversionlayerUGS0UDS0IDUDSIDP+TrenchDMOSdevicestructureN+P-wellgatedrainsource•DMOSintroductionandapplication•TrenchDMOSfunction•Processflowintroduction•MainimportantstepandissuediscussionMaskintroductionZeromask:definethealignmentmarkareaTOmask:definetheguardring(GR)andcellareaTRmask:definethetrenchareaGTmask:definethepolylinkareaSNmask:defineP+implantareaW1mask:definecontactareaA1mask:definebondareaPTmask:defineP-wellimplantareaBackside:definethedrainpad0.35umTrenchDMOSprocessintroductionEPI-N,0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+SUB:CZN1000.001-0.003ohm.cmN-EPI:N0.21-0.25ohm.cmEPISUB编批平边打标EPI-N0.207-0.253OHM.CM擦片10#清洗B-CLEAN0.35umTrenchDMOSprocess-waferstartEPI-N,0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N-Initialoxide:350+/-50AEPISUB吸杂氧化R0007测产品片300-350-400A0.35umTrenchDMOSprocess-ZeromarkN-N+EPISUBPRZeromarkphotoPRalignmentmarkareaZERO光刻S3#//CUNCN01ZERO显检0.35umTrenchDMOSprocess-ZeromarkN-N+EPISUB1500APRZeromarketch:SIloss1500APRalignmentmarkareaZERO层腐蚀Siloss1200A检查EPI-N,0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N-0.35umTrenchDMOSprocess-ZeromarkPhotostripalignmentmarkareaEPISUB干法去胶BC湿法去胶PWSA01Si深度测量1500+/-200A检查N-N+EPISUBoxideremove:wetetch350A0.35umTrenchDMOSprocess-padoxideremovealignmentmarkarea湿法ZEROETCHBOE60秒(浸润)检查N-N+EPISUBOXIDE:6500AWetoxide6500A0.35umTrenchDMOSprocess-GRoxideCircuitarea清洗B-CLEAN场氧化R0217测产品片5600-6500-7400A[1]OXIEDE:6500A0.35umTrenchDMOSprocess-TOphoto3.0umPRTOphoto:ADI3.0+/-0.3umGRareaCellareaCELL3.0umGRN-N+EPISUB清洗S/P5*1SDG光刻32#//CUNC01.TO测条宽2.7-3-3.3UMLCF显检GRWETETCH:AEI2.3+/-0.3um0.35umTrenchDMOSprocess-GRetchN-N+EPISUB3.0umPR2.3um闪氧DESCUM湿法腐蚀540秒(浸润)检查残氧测量0-20A[2]0.35umTrenchDMOSprocess-GRPRstripN-N+EPISUBGRoxideCELL2.3umGRPRstrip干法去胶BC湿法去胶PR-L/R检查测条宽2-2.3-2.6UMLCF底部0.35umTrenchDMOSprocess-HardMaskLPTEOS6500AN-N+EPISUBLPTEOS:6500ALPTEOSGRoxide清洗B-CLEANLPTEOSR0811测控制片5900-6500-7100A增密R06520.35umTrenchDMOSprocess-HardMaskphotoHardmaskphoto:ADI0.35+/-0.03umN-N+EPISUBPRTRENCH光刻54#//CUNC01.TR套刻测量±0.15UM测条宽0.32-0.35-0.38UM显检0.35umTrenchDMOSprocess-HardMasketchHardmaskdryetchN-N+EPISUBOE500APRTEOS腐蚀HME6500检查残氧测量0-50A[2]PRstripN-N+EPISUB0.35umTrenchDMOSprocess-HardMaskPRstrip干法去胶BC湿法去胶PR-L/R清洗B-CLEAN0.35umTrenchDMOSprocess-TrenchetchTrenchetch:AEI0.48+/-0.05umN-N+SUBTrench腐蚀NEW-BYD13K检查湿法去胶PR-L/RSOG湿法腐蚀20:1BOE2MIN清洗B-CLEAN清洗D-CLEAN测条宽0.43-0.48-0.53UMTENC监测0.35umTrenchDMOSprocess-N-IMPN-N+SUB00-P/100KEV/1E12N-N-IMP注P+00-P/100KEV/1E12清洗D-CLEANSACoxide1200A0.35umTrenchDMOSprocess-SACoxideN-N+N-牺牲氧化R0038测控制片1080-1200-1320A0.35umTrenchDMOSprocess-SACoxideremoveN-N+HardmaskandSACoxideremoveGRoxideRemain5000AN-湿法腐蚀WE56残氧测量0-20A[2]残氧测量4500-5000-5500A[1]清洗B-CLEAN0.35umTrenchDMOSprocess-GateoxideGateoxide500+/50AN-N+GRoxideN-栅氧R0344测产品片450-500-550A[2]0.35umTrenchDMOSprocess-DOPEPOLYN-N+polyDopePoly7k:10-14-18Ω/□GRoxideN-原位掺杂R0445测控制片(膜厚)6300-7000-7700A测控制片(电阻)10-14-18Ω/□0.35umTrenchDMOSprocess-POLYphotoN-N+polyPOLYphoto:ADI1.0+/-0.1umN-PRPOLY1光刻32#//CUNC01.GT套刻测量±0.15UM测条宽0.9-1-1.1UM显检0.35umTrenchDMOSprocess-POLYetchN-N+Polyetch:AEI1.0+/-0.1umN-PRPOLY腐蚀POLY7000检查残氧测量480-530-580A[3]漂洗WE990.35umTrenchDMOSprocess-POLYPRstripN-N+PRstripN-干法去胶BC湿法去胶PWSA01检查残氧测量430-480-530A[3]残氧测量4250-4750-5250[1]湿法腐蚀WE-N36残氧测量100-200-300A[3]测条宽0.9-1-1.1UMKLA监测0.35umTrenchDMOSprocess-PWELLIMP00-B/50KEV/2E13N-N+PWELLIMPN-清洗S/P5*1P阱曝光32#//CUNC01.PT套刻测量±0.15UM测条宽0.9-1-1.1UM显检注B+00-B/50KEV/2E130.35umTrenchDMOSprocess-PWELLdriveinN+P-Drivein:1150C,30minN-N-干法去胶BC湿法去胶PWSA01检查清洗S/P5*1推阱R0937测控制片120-150-180A0.35umTrenchDMOSprocessprofile-NSDphotoN+P-NSDphotoPRN-N-NSD曝光32#//CUNC01.SN套刻测量±0.12UM测条宽0.8-0.9-1UM显检前烘W0.35umTrenchDMOSprocessprofile-NSDIMPN-N+P-00-As/80KEV/1E16NSDIMPPRN-N-注As+00-AS/80KEV/1E160.35umTrenchDMOSprocessprofile-NSDPRstripN-N+P-PRstripN-N-干法去胶DE湿法去胶PWSA01检查清洗S/P5*10.35umTrenchDMOSprocessprofile-NSDannealN+P-NSDanneal:950C,60minN-N+N-退火R07290.35umTrenchDMOSprocessprofile-ILDN-N+P-BP7500+TEOS13KN-N+Total20.5KN-USG1500DEPUSG1500USG1500测产品片TF\$FILE\D1UBPSG6000DEPBPSG6000测产品片6525-7500-8475A[3]回流R0675清洗PR-L/R检查TEOS淀积TEOS13KDEP测产品片-SI19525-20500-21475A[3]-SI擦片12#N-N+P-N-N+OxideCMP0.35umTrenchDMOSprocessprofile-OxideCMPILD18.5KN-CMPD1OCMPTO18500A检查显微镜检查测产品片-SITENC