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集成电路器件与工艺CAD第四讲（面授版）北京大学深圳研究生院林信南本讲目的•通过教程学习SilvacoTCAD模拟方法–掌握如何登录并运行Silvaco–了解SilvacoTCAD教程学习方法–根据教程掌握基本模拟skill教程1•ProcesssimulationofaMOStransistorinATHENA•Processparameterextraction(eg.oxidethicknesses)•AutointerfacebetweenATHENAandATLAS•SimpleId/VgscurvegenerationwithVds=0.1V•ParameterextractionforVt,lineargain(beta)andmobilityrolloff(theta)教程2•Id/VdscurvegenerationwithVgs=1.1,2.2and3.3V•IVCurveparameterextractionforIdmaxandsaturationslope教程3•simpleId/VgscurvegenerationwithVds=0.1V•parameterextractionforSub-ThresholdSlope教程4•simpleId/VgscurvegenerationwithVds=0.1V•rampofdrainvoltage•simpleId/VgscurvegenerationwithVds=3.0V•parameterextractionfortheDIBLparameter教程5•simpleId/VgscurvegenerationwithVbs=0.0V•rampofdrainvoltage•simpleId/VgscurvegenerationwithVbs=-1.0V•parameterextractionforbodyeffect教程6•autointerfacebetweenATHENAandDEVEDIT•remeshingusingDEVEDIT•autointerfacebetweenDEVEDITandATLAS•solutionforaVgsrampwithVds=3.3V•parameterextractionformaximumgateandsubstratecurrents•extractthepeakvalueandpositionofthesubstrateandgatecurrents.教程7•solutionforaVdsrampwithVgs=0.0Vtogetbreakdown•Extractsyntaxusedtomeasurethebreakdownvoltageisofthecurrentsearchtype•Thisispreferredoverthesimplemax(v.drain)syntaxthatcouldbeusedasitgivesmoreconsistentresults教程15•NMOSScaling:NMOStransistorslengthisdefinedwithasetstatementaroundthepolyetchstageinthesimulation.•Thesetstatementdefinesavariableusedinasubsequentstretchstatementtodefinethehalflengthofthetransistor.•Importantlythevariable$cdisalsousedtoplacethenameofthedrainelectrodeinthesubsequentelectrodestatement.Thusauserdoesnothavetoomuchdifficultyindefiningthedrains'position.MOS2教程1•createanNMOSstructureusingATLASsyntax•calculatetheinitialDCstateincircuitmode•simulatetheDCtransfercurveoftheinverters•simulatethetransientswitchingcurveoftheinverters.MOS2教程2•formationofPMOStransistorusingATLASsyntax•Id/Vgstest•highvoltagestressfor1000seconds•Id/Vgstestsofdevicesatvariousstresstimes.MOS2教程3•formationofaMOSstructureinATHENA•interfacefromATHENAtoATLAS•specificationofexternalRCelementstomakeanNMOSinverter•transientsimulationofgateturn-onMOS2教程4•processsimulationoffieldoxidebird'sbeakinATHENA•interfaceofthe2DstructurefromATHENAtoDEVEDIT3D•structureeditingtocreate3DMOSFET•fromDEVEDIT3DtoATLAS•simulationoftheId/Vgscharacteristic•extractionofVtandsub-thresholdleakageparametersMOS2教程4•modifyexistingregionextentinZdirection(eg.polysilicon)•addnewaluminumregionsforsourceanddraincontacts•Specifytheseaselectroderegions.•AddN+arsenicdopingforsourceanddrain.BesuretheZextentofthedopingincludesa0.1micronspacerawayfromthegateedge.Specifyy-rolloff(junctiondepth)andxandzrolloffs(lateralspread).MOS2教程4•definebaselevelmesh(0.2x0.2microns)andmeshthestructureinXandY.•useREFINEtoaddmeshpointsinthechannelregion•usethez.planestatementtocontrolthemeshintheZdirection.TheZdirectionmeshismadeupofplanesXYmeshleadingtoprismaticmeshelements.MOS2教程5•creationofashortchannelMOSFETinAthena•regriddinginDEVEDIT•isothermalId/VdsanalysisinATLAS•non-isothermalId/VdsanalysisinATLASMOS2教程6•forms a MOS device in ATHENA using a salicide process •uses assigned variables to parameterize the structure•simulates Id/Vgs‐Vbs curves in Atlas•simulates Id/Vds‐Vgs curves in Atlas•interfaces to UTMOST for extraction of a BSIM3 parameter set.MOS2教程7•CreationofaN-channelMOSFETinAthena•remeshbyDEVEDIT•theATLAScurvetracingalgorithmisusedtotraceMOSsnapback.MOS2教程8•AshortchannelMOSFETiscreatedinAthena•regriddinginDEVEDIT•selectionofthecoupledsolutionofenergybalanceandlatticeheatingequations•electricalanalysisusingthecurvetraceralgorithmtotracetheIVcurveMOS2教程9•constructionofanLDDMOSFETinATHENA•regridofthestructureinDEVEDIT•gate/drainoverlapcapacitanceextractionusingACanalysisMOS2教程10•runSSUPREM3simulationofNMOSsource/draindoping•runSSUPREM3simulationofNMOSchannel•combinetwoSSUPREM3dopingfilesintoa2DstructureinATLAS•regridthestructurebasedonnetdopinglevelMOS2教程11•PMOSprocesssimulationusingATHENA•specificationofGemolefractioninATHENA•useofELITEdepositionandetchingforcontacttopography•definitionofSiGedopants•interfacetoATLAS•savingandplottingofthebandstructurefortheSiGe/Siheterojunction.••Id/VgscharacteristicusingATLASMOS2教程12•specificationofPMOSstructureusingATLASsyntax•specificationofabruptSiGeheterojunctions•selectionoftheenergybalancemodel,latticeheatflowsolutionandcoupledsolver•simulationofId/VdscharacteristicforVgs=-1.0VMOS2教程13•defineoptimumMOSmeshusingavariableforsurfacemeshspacing•selectinturnoneofthreeMOSMobilityModels•runaId/VgssimulationatlowVds•overlayofId/VgscurvesandmobilityinTonyplot