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FEATURESTrenchFETPowerMOSFET:1.8VRatedRoHSCOMPLIANTSi1305DLVishaySiliconixDocumentNumber:71076S-51075—Rev.D,13-Jun-05(G-S)MOSFETPRODUCTSUMMARYVDS(V)rDS(on)()ID(A)0.280@VGS=−4.5V−0.92−80.380@VGS=−2.5V−0.790.530@VGS=−1.8V−0.67MarkingCodeLBXXLotTraceabilityandDateCodePart#CodeYYOrderingInformation:Si1305DL--T1Si1305DL--T1—E3(Lead(Pb)-Free)SOT-323SC-70(3-LEADS)123TopViewGSDABSOLUTEMAXIMUMRATINGS(TA=25CUNLESSOTHERWISENOTED)ParameterSymbol5secsSteadyStateUnitDrain-SourceVoltageVDS−8VGate-SourceVoltageVGS8VContinuousDrainCurrent(TJ=150C)aTA=25CID−0.92−0.86ContinuousDrainCurrent(TJ=150C)aTA=70CID−0.74−0.69APulsedDrainCurrentIDM−3AContinuousDiodeCurrent(DiodeConduction)aIS−0.28−0.24MaximumPowerDissipationaTA=25CPD0.340.29WMaximumPowerDissipationaTA=70CPD0.220.19WOperatingJunctionandStorageTemperatureRangeTJ,Tstg−55to150CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMiJtitAbitat5secR315375MaximumJunction-to-AmbientaSteadyStateRthJA360430C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF285340C/WNotesa.SurfaceMountedon1”x1”FR4Board.Si1305DLVishaySiliconix—Rev.D,13-Jun-05SPECIFICATIONS(TJ=25CUNLESSOTHERWISENOTED)ParameterSymbolTestConditionMinTypMaxUnitStaticGateThresholdVoltageVGS(th)VDS=VGS,ID=−250A−0.45VGate-BodyLeakageIGSSVDS=0V,VGS=8V100nAZeroGateVoltageDrainCurrentIDSSVDS=−8V,VGS=0V−1AZeroGateVoltageDrainCurrentIDSSVDS=−8V,VGS=0V,TJ=70C−5AOn-StateDrainCurrentaID(on)VDS=−5V,VGS=−4.5V−3AVGS=−4.5V,ID=−1A0.2300.280Drain-SourceOn-StateResistancearDS(on)VGS=−2.5V,ID=−0.5A0.3150.380DS(on)VGS=−1.8V,ID=−0.3A0.4400.530ForwardTransconductanceagfsVDS=−5V,ID=−1A3.5SDiodeForwardVoltageaVSDIS=−0.3A,VGS=0V−1.2VDynamicbTotalGateChargeQg2.64Gate-SourceChargeQgsVDS=−4V,VGS=−4.5V,ID=−1A0.6nCGate-DrainChargeQgd0.5Turn-OnDelayTimetd(on)815RiseTimetrVDD=−4V,RL=45580Turn-OffDelayTimetd(off)VDD=−4V,RL=4ID−1A,VGEN=−4.5V,Rg=61725nsFallTimetf1220Source-DrainReverseRecoveryTimetrrIF=−1A,di/dt=100A/s2745Notesa.Pulsetest;pulsewidth300s,dutycycle2%.b.Guaranteedbydesign,notsubjecttoproductiontesting.Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.TYPICALCHARACTERISTICS(25CUNLESSNOTED)01234560.00.51.01.52.02.53.03.54.0024680.00.51.01.52.02.53.0VGS=4.5VTC=−55C125C2V25COutputCharacteristicsTransferCharacteristicsVDS−Drain-to-SourceVoltage(V)−DrainCurrent(A)IDVGS−Gate-to-SourceVoltage(V)−DrainCurrent(A)ID1V2.5V3V3.5V4V1.5VSi1305DLVishaySiliconixDocumentNumber:71076S-51075—Rev.D,13-Jun-05(25CUNLESSNOTED)0.00.20.40.60.81.01.2−On-Resistance(rDS(on))050100150200250300350024680.00.40.81.21.6−50−25025507510012515002468012340.00.20.40.60.81.01.21.401234567VDS−Drain-to-SourceVoltage(V)CrssCossCissVDS=4VID=1AID−DrainCurrent(A)VGS=4.5VID=1AVGS=1.8VVGS=2.5VGateChargeOn-Resistancevs.DrainCurrent−Gate-to-SourceVoltage(V)Qg−TotalGateCharge(nC)C−Capacitance(pF)VGSCapacitanceOn-Resistancevs.JunctionTemperatureTJ−JunctionTemperature(C)0.00.20.40.60.81.00.00.51.01.52.02.53.03.54.04.5ID=1A1010.001Source-DrainDiodeForwardVoltageOn-Resistancevs.Gate-to-SourceVoltage−On-Resistance(rDS(on))VSD−Source-to-DrainVoltage(V)VGS−Gate-to-SourceVoltage(V)−SourceCurrent(A)ISVGS=4.5V0.10.01TJ=150CTJ=25CrDS(on)−On-Resiistance(Normalized)Si1305DLVishaySiliconix—Rev.D,13-Jun-05TYPICALCHARACTERISTICS(25CUNLESSNOTED)0122048Power(W)SinglePulsePowerTime(sec)1610−310−211060010−110−4100−0.2−0.10.00.10.20.30.4−50−250255075100125150ID=250A210.10.010.20.10.050.02SinglePulseDutyCycle=0.5ThresholdVoltageVariance(V)VGS(th)TJ−Temperature(C)NormalizedThermalTransientImpedance,Junction-to-AmbientSquareWavePulseDuration(sec)NormalizedEffectiveTransientThermalImpedance1.DutyCycle,D=2.PerUnitBase=RthJA=360C/W3.TJM−TA=PDMZthJA(t)t1t2t1t2Notes:4.SurfaceMountedPDM10−310−211010−110−4210.10.010.20.10.050.02SinglePulseDutyCycle=0.5NormalizedThermalTransientImpedance,Junction-to-FootSquareWavePulseDuration(sec)NormalizedEffectiveTransientThermalImpedance11006001010−110−210−3TA=25CVishaySiliconixmaintainsworldwidemanufacturingcapability.Productsmaybemanufacturedatoneofseveralqualifiedlocations.ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,see:91000(collectively,“Vishay”),disclaimanyandallliabilityforanyerrors,inaccuraciesorinco