0-18-mMOSFET器件的总剂量辐照效应

ActaPhys．Sin．Vol．60No．1120111161032011ChinesePhysicalSocietyhttp//wulixb．iphy．ac．cn116103-10.18μmMOSFET*121211121121120005021000392010121320112150.18μmmetal-oxide-semiconductorfield-effect-transistorMOSFETγ、、、、．．．MOSFETPACS61.80.Ed77.84.Bw85.30.Tv*．[e-mail]1.、．．1．．．MOSFETmetal-oxide-semiconductorfield-effect-transistor．、23．．nm45．MOSFET．60.25μmMOSFET70.18μmMOSFET．0.18μmMOSFET、、、．．2.0.18μmMOSFETW/L=10μm/0.18μm3nm390nm1.8V．ON1.8V、．0.9V0V．0.05V．．60Coγ200radSi/s．100200300400500kradSi1rad=ActaPhys．Sin．Vol．60No．112011116103116103-210－2Gy．3.3.1.1MOSFET．．100kradSi100kradSi100kradSi．500kradSi10－7A10－12A5．、．1MOSFETIdsMOSFETVgs3.2.MOSFET2．．3nm8．．3．10－11—10－10A．．4．．．2MOSFETVds3MOSFET4MOSFETVgs0V9．5MOSFET．ActaPhys．Sin．Vol．60No．112011116103116103-3．5MOSFETMOSFET．．6．10．MOSFET．．．6MOSFET7．MOSFET．．．．．7MOSFET88．1.8V0V500kradSi．-1．．ActaPhys．Sin．Vol．60No．112011116103116103-49ab3.3.．．Silvaco．-Shockley-Read-HallSRH、FLDMOB．．119．Qf12．．．9b．．4.1.、2.、3.4.．．1SchwankJRShaneyfeltMRFleetwoodDMFelixJADoddPEPailletPFerlet-CavroisV2008IEEETrans．onNucl．Sci．5518332ZhangTQLiuCYLiuJLWangJPHuangZXuNJHeBPPengHLYaoYJ2001ActaPhys．Sin．503434inChinese、、、、、、、、20015024343ChenWHDuLZhuangYQBaoJLHeLZhangTFZhangX2009ActaPhys．Sin．584090inChinese、、、、、、20095840904EsquedaISBarnabyHJAllesLM2005IEEETrans．onNuc．Sci．5222595FaccioFBarnabyHJChenXJFleetwoodDMGonellaLMcLainMSchrimpfRD2008Microelect．Reliab．4810006MengZQHaoYTangYMaXHZhuZWLiYK2007ActaPhys．Sin．Vol．60No．112011116103116103-5Chin．J．Semicond．28241inChinese、、、、、2007282417WangSHLuQWangWHAnXHuangR2010ActaPhys．Sin．591970inChinese、、、、20105919708BenedettoJMBoeschHEMcLeanFBMizeJP1985IEEETrans．onNucl．Sci．3239169BarnabyHJ2006IEEETrans．onNucl．Sci．53310310GonellaLFaccioFSilvestriMGerardinSPantanoDReVManghisoniMRattiLRanieriA2007Nucl．Instr．andMeth．inPhys．Res．A58275011YoGUKharePSSchrimpfRDMassengillLWGallowayKF1999IEEETrans．onNucl．Sci．46183012TurowskiMRamanASchrimpfRD2004IEEETrans．onNucl．Sci．513166Totalionizingdoseeffectof0.18μmnMOSFETs*LiuZhang-Li12HuZhi-Yuan12ZhangZheng-Xuan1ShaoHua1NingBing-Xu12BiDa-Wei1ChenMing12ZouShi-Chang11TheStateKeyLaboratoryofFunctionalMaterialsforInformaticsShanghaiInstituteofMicrosystemandInformationTechnologyChineseAcademyofSciencesShanghai200050China2GraduateUniversityoftheChineseAcademyofSciencesBeijing100039ChinaReceived13December2010revisedmanuscriptreceived15February2011AbstractA0.18μmMOSFETwithshallowtrenchisolationisexposedtoaγ-rayradiation．Theparameterssuchasoff-stateleakagecurrentthresholdvoltagetransconductancegateleakagecurrentandsubthresholdslopeareanalyzedforpre-andpost-irradiation．Byintroducingconstantsheetchargesattheshallowtrenchisolationoxidesidewallgoodagreementbetween3Dsimulationandexperimentresultisdemonstrated．Webelievethatthethingateoxideisinsensitivetoradiationandtheradiationinducedchargetrappingintheshallowtrenchisolationstillleadstomacroscopiceffectssuchasdrain-to-sourceleakagecurrentultimatelylimitingthetoleranceofCMOScircuits．KeywordstotalionizingdoseshallowtrenchisolationoxidetrappedchargeMOSFETPACS61.80.Ed77.84.Bw85.30.Tv*ProjectsupportedbytheOpenFundoftheKeyLaboratoryofMicrosatellitesChineseAcademyofScienceofChina．[e-mail]