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-31-1082010-07-20108Vol10No8ELECTRONICS&PACKAGING882010858214035CMOSCMOSMOSTN492A1681-1070201008-0031-06TheRadiationEffectsandHardenedTechnologiesofSemiconductorDeviceZHAOLi,YANGXiao-huaChinaElectronicsTechnologyGroupCorporationNo.58ResearchInstitute,Wuxi214035,ChinaAbstract:Tocontrastwithotherdevice,CMOShasadvantagesonlesspower,noisemartin.Tosatellitesandspaceshipareconcerned,CMOSisthefirstchoice.Theradiationeffectforsemiconductorscalingwasdescribed.Itisincluded:thicknessofoxideofgate,scalingofgate,GIDL.Then,theradiationhard-enedofdeviceswasintroduced,indetail.Fordifferenceapplication,wegivethedifferencewaystohardened.Keywords:microelectronicdevice;radiationeffect;radiationhardened;scalingofMOSdevice1CMOSCMOSCMOSCMOSCMOS-32-10822.150nm~200nmSiO2SiO2-1GySiO27.81014-SiO2/SiSiO2[1]1bhh1Si-SiO21nMOSapMOSb-I-V[2]VGID012340I-V1234I-V10AnMOSpMOS1nMOSpMOS1a5nMOS5012034pMOSnMOS4pMOS1MOSI-VCMOS2.2[3]CMOS-33-108X100nmLKs1DIBL2.2.1[4,5]HuangNMOS2CoxQotCcm-2L/Wd2CMOSVt[5]NNMOSPQot2.2.2Si-SiO2[6]L-[7]GIDL[8]Rchan3n,pLeffWeffLeffL3LVT/NMOSLLLeffSi-SiO2LDD[9]LDD2.2.3GIDLGIDLMOSDRAMNMOSVGSPNPNGIDLGIDLL|VGS-VT|GIDLn456-34-108VmgNitdonorNitacceptorGIDLVGSGIDLIDGIDLMOSFET3[10]3.1SOSSOISiGeGaAsSiCSOISOISiO2GaAs7SOSSiGeSiC3.2SOISOSSiGeJFETMOSCMOSBiCMOSSOIJFETSOISOSCMOS/SOISOSBiCMOSCMOSCMOS/JFETMOSCMOSMOSBiCMOSCMOS-35-108pnppnppnppnp103GySinpnpnpnpnpnp1/30npnnpnnpnpnppnppnp8mpnp5m10mpnppnpSi/SiO2npnppnpCMOShfe1010ncm-2~1014ncm-2SiSiO2SiO2-1npnpnpnpn-102~103GySi105~106GySi/s123456789-36-1081011JFETJFETJFETJFET1013ncm-2JFET1014ncm-21014ncm-2JFET310ncm-21104Gy/hJFETNMOSPMOS104GySi104GySi103GySiJFETMOS102~103GySiSi/SiO2104GySiMOSMOSSiO2Si-SiO2---SiO2P4CMOSCMOS1WaltersM,ReismanA.Radiation-inducedneutralelectrontrapgenerationinelectricallybiasedinsulatedgatefieldef-fecttransistorgateinsulators[J].ElectrochemistSoc.1991,138:2756-2762.2.[J].2004531:194-199.3C.Claeys,E.Simoen..[M].2008.4ScarpullaJ,AmramAL,etal.Gatesizedependenceoftheradiation-producedchangedinthresholdvoltage,mobility,andinterfacestatedensityinbulkCMOS[J].IEEETransNuclSci.39:1990-1997.5ShaneyefltMR,FleetwoodDM,etal.EffectsofdevicescalingandgeometryonMOSradiationhardnessassurance[J].IEEETransNuclSci.40:1678-1685.6ChenW,BalasinskiA.Lateraldistributionofradiation-in-duceddamageinMOSFETs[J].IEEETransNuclSci,1991,38:1124-1129.7BalasinskiA.IonizingradiationdamagenearCMOStransis-torchanneledges.[J]IEEETransNuclSci,1992,39:1998-2003.8BalasinskiA.Impactofradiation-inducednonuniformdam-agenearMOSFETjunctions[J].IEEETransNuclSci.1993,40:1289-1296.9PantelakisDC,HemmenwayDF,etal.Freeze-outcharac-teristicsofradiationhardenedn+polysilicongateCMOStransistors[J].IEEETransNuclSci.1991,38:1289-1296.10[J]..2003333:224-231.1956-1980-