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:2001205228;:2001207222:100423365(2002)0120029205MOS1,1,1,1,1,2,2,2,2,3(1.,710071;2.,710024;3.,710065):MOSCMOS,MOS,2,,();,:MOS;;;;:TN432;O571133:ARadiationEffectsofMOSDevicesatLowDoseRateLIUChuan2yang1,ZHANGTing2qing1,LIUJia2lu1,WANGJian2ping1,HUANGZhi1,XUNa2jun2,HEBao2ping2,PENGHong2lun2,YAOYu2juan2,WANGBao2cheng3(11ResearchInstituteofMicroelectronics,XidianUniversity,Xi’an,Shaanxi710071;21NorthwestNuclearTechnologyInstitute,Xi’an,Shaanxi710024;31KunlunMachineryFactory,Xi’an,Shaanxi710065,P1R1China)Abstract:EffectsofirradiationdoseratesandirradiationbiasareinvestigatedforMOSdevicesunderC2rays1ThresholdvoltageshiftiscomparedaftertheMOSdeviceisirradiatedunderdifferentirradiationtemperature,gatebiasandannealingconditions1Theelectricfieldingateoxideduetogatebiasnotonlyacceleratestheseparationofelectron2hole,butalsoinfluencesthemovementofpositivecharges,includingholeandH+1Inaddition,thegatebiasishelpfulforimprovingannealing1Keywords:MOSdevice;Radiationeffect;Thresholdvoltageshift;Lowdoserate;InterfacestateEEACC:6180E1,MOSMOS,,MOS,,,[1][24],MOS,[5,6],PMOS[6,7],,CC24007,MOS,2MOSCC400732120022MicroelectronicsVol132,1Feb12002,PMOSNMOSCMOS,MOS70nm,3Lm,:P5067,N253Co60,C010230100101000758Gy(Si)ös,,,-30C,,2.5103Gy(Si),CC4007NP,,P+5V,N,:0V+5V,PN4156A3488A,SiöSiO2MOS,,MOS,,[8]$Vot$Vit3311101023Gy(Si)ösNMOS$Vth1,,$Vth;,1NMOS$Vth231$Vit$Vot23,+5VNMOS,,;0V,23,,$Vot$Vit2NMOS$Vit3NMOS$Vot401023Gy(Si)ösPMOS,$Vth564,PMOS$Vit$Vot4PMOS$Vth5PMOS$Vit30:MOS20026PMOS$Vot456,$Vth$VitNMOS,,;$VotNMOS,$Vot,,$Vot,$Vot,$Vot,PMOS,71078PMOS01001Gy(Si)ös,$Vit$Vot;910PMOS01000758Gy(Si)ös-30C,$Vit$Vot710,,,PMOS7PMOS$Vit8PMOS$Vot9PMOS$Vit10PMOS$Vot,,2,2,20cm2V-1s-1[6](),,10-410-11cm2V-1s-1[6],,,,,,2NMOS,2,;PMOS,,2,,,2,,,;,,,,,1:MOS31[9,10],,Si2H(,),H+,H+,,H+,,Si-H,:Si-H+H++e-Si-H+H0Si+H2,,2,,,,,,2,,,,,,,,,,,,,,,,31211,NMOS$Vth,,,,,$Vth,0.32V;$Vth0.05V,$Vth11MOS$Vth12MOS$Vit13MOS$Vot1213NMOS,$Vit$Vot,NMOS$Vit$Vot,,NMOSNMOS,MOS,$Vit$Vot0.4V0.75V,0.25V;,PMOS,$Vth,$Vit$Vot,NMOS,,,,,,,,,H+,,32:MOS2002,,,;,,,;,,,[13],,,[11,12]4MOS,:1)2(),,,MOS2)MOS3),,4):[1]MaTP,DressendorferPV1IonizingradiationeffectsinMOSdevicesandcircuits[M]1AWiley2Inter2sciencePublication,JohnWiley&Sons119891[2]SchwankJR,SextonFW,FleetwoodDM1Temper2atureeffectsontheradiationresponseofMOSdevices[J]1IEEETransNuclSci,1988;35(6):14321[3]ShaneyfeltMR,SchwankJR,FleetwoodDM,etal1EffectsofirradiationtemperatureonMOSradiationresponse[J]1IEEETransNuclSci,1998;45(3):13721[4]JohnstonAH,RoeskeSB1Totaldoseeffectsatlowdoserates[J]1IEEETransNuclSci,1986;33(6):[5],,,1CMOS[J]1,1999;20(8)1[6],,,1PMOS[J]1,2000;21(2):1791[7],,,1PMOS[J]1;2000;21(4):3831[8]McWhorterPJ,WinokurPS1Correlatingtheradia2tionresponseofMOScapacitorsandtransistors[J]1ApplPhysLett,1986;48(2):13321351[9]WinkourPS,BeochHE,McGarrityJM,etal1Two2stageprocessforbuild2upofradiation2inducedinterfacestates[J]1JApplPhys,1979;50(5)1[10]StahlbushRE,EdwardsAH,GriscomDL,etal1Post2irradiationcrackingofH2andformationofinter2facestatesinirradiatedmetal2oxidesemiconductorfield2effecttransistors[J]1JApplPhys,1993;72(2)1[11],,,1MOSC[J]1,2000;49(7)1[12]SchwankJR,SextonFW,FleetwoodDM1Temper2atureeffectsontheradiationresponseofMOSdevices[J]1IEEETransNuclSci,1988;35(6):14321:(1977),(),,1999,,CMOS[2001]340,,,,,1:MOS33