氧化铝陶瓷基板化学镀铜金属化及镀层结构

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262Vol.26No.220072ELECTRONICCOMPONENTSANDMATERIALSFeb.2007SEM3.6mΩ/□2.3mΩ/□Al2O3TQ153A1001-2028200702-0040-03MetallizationandstructureofcopperlayeronAl2O3ceramicbyelectrolesscopperplatingSONGXiu-feng,FURen-li,HEHong,SHENYuan,HANYan-chun(CollegeofMaterialsScienceandTechnology,NanjingUniversityofAeronauticsandAstronautics,Nanjing210016,China)Abstract:Surfacemetallizationonaluminaceramicwasrealizedbyelectrolesscopperplating.MicrostructureofthemetallizedcopperlayerbeforeandafterheattreatmentwasstudiedbySEM.Theadhesionstrengthofthemetalliccopperlayerwasevaluated.Theresultsindicatethatcompactmetalliclayercanbeobtainedonthesurfaceofaluminabycontrollingtheconcentrationofcopperionsinplatingbathanddepositionrate.Afterheattreatment,themetalliccopperlayerismorecompact,andtheelectronicpropertyareimproved,electricresistancearereducedfrom3.6mΩ/□to2.3mΩ/□.Coalescenttothealuminasubstrateiscompactandfreeflexure.Theadhesionstrengthisgoodenoughforuseinelectrocircuit.Keywords:electrontechnology;surfacemetallization;electrolesscopperplating;aluminaceramic;surfacemorphologyMo-MnMo-Mn[1~6]Al2O3[5,6][0][3~7][3][6][7]962006-09-28(:S0466−061)1965E-mail:renlifu@nuaa.edu.cn1983Tel:13851644138;E-mail:guigxms@163.com262%11.196%11Tab.1Compositionsoftheelectrolesscopperplatingsolutions#1#2(HCHO)/(mol·L–1)0.250.25(NaOH)/(mol·L–1)0.500.50(CuSO4·5H2O)/(mol·L–1)0.150.04/(mol·L–1)0.140.14EDTA2Na/(mol·L–1)0.140.14/(mol·L–1)0.17×10–30.17×10–31.296%6008001.25mol/L50NaOH10minH2SO4100mL/LCrO31.8mol/L5090minSnCl20.1mol/LHCl100mL/L25minSnCl2SnCl2AgNO30.06mol/L1min501h90010min2mm×2mm2500.5h22.1[8][9]1ab#1#21a1b#1#2a#1b#21Fig.1Microcosmicmorphologyimagesofcopperlayerindifferentsolutions2[10,11]2Fig.2Themorphologyimageofdefectincopperlayersurface(a)(b)Vol.26No.2Feb.20072.22mm×2mm2500.5h33Fig.3Cross-sectionalmicrostructureimageofcopperlayer2.33.6mΩ/□2.3mΩ/□4ab4ab“”[10](a)(b)4Fig.4Microcosmicmorphologyimagesofcopperlayerbeforeandafterheattreatment3196%234[1]PaiPL,TingCH.SelectiveelectrolesscopperforVSLIinterconnection[J].IEEEElectronDeviceLett,1989,10(9):423425.[2]MengHK,MichaelAL,NathanWC.Pd/SiplasmaimmersionionimplantationforselectiveelectrolesscopperplatingonSiO2[J].ApplPhysLett,1992,60(22):27672769.[3],,.Al2O3Cu[J].,1999,32(7):1113.[4]BaudrandDW.MetalHandbook[M].NewYork:AmericaSocietyforMetal,1994.290310.[5]BackusP,JohalK,MetzgerD.Transactionsoftheinstituteofmetalfinishing[J].MetalFinish,2000,78(2):1214.[6],.96Al2O3[J].,1995,29(1):3440.[7],,.96Al2O3[J].,2005,34(1):1718.[8],,,.[J].,2001,20(2):14.[9].[J].,2000,33(1):3336.[10].[M].:,2004.163164.[11][].[M].,.:,1992.(a)(b)

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