HZM6.2ZMFA中文资料

Rev.1.00Jun08,2005page1of5HZM6.2ZMFASiliconPlanarZenerDiodeforSurgeAbsorbREJ03G1207-0100(Previous:ADE-208-1515)Rev.1.00Jun08,2005Features•HZM6.2ZMFAhasfourdevicesinamonolithic,andcanabsorbsurge.•Lowcapacitance(C=8.5pFmax)andcanprotectESDofsignalline.•MPAK-5Packageissuitableforhighdensitysurfacemountingandhighspeedassembly.OrderingInformationTypeNo.LaserMarkPackageNamePackageCode(PreviousCode)HZM6.2ZMFA62NMPAK-5PLSP0005ZC-A(MPAK-5)PinArrangement1.Cathode2.Cathode3.Cathode4.Anode5.Cathode12543(TopView)HZM6.2ZMFARev.1.00Jun08,2005page2of5AbsoluteMaximumRatings(Ta=25°C)ItemSymbolValueUnitPowerdissipationPd*200mWJunctiontemperatureTj150°CStoragetemperatureTstg−55to+150°CNote:Fourdevicetotal,SeeFig.2.ElectricalCharacteristics*1(Ta=25°C)ItemSymbolMinTypMaxUnitTestConditionZenervoltageVZ5.90—6.50VIZ=5mA,40mspulseReversecurrentIR——3µAVR=5.5VCapacitanceC——8.5pFVR=0V,f=1MHzDynamicresistancerd——60ΩIZ=5mAESD-Capability*2—13——kVC=150pF,R=330Ω,Bothforwardandreversedirection10pulse.Notes:1.Peronedevice2.Failurecriterion;IR3µAatVR=5.5V.HZM6.2ZMFARev.1.00Jun08,2005page3of5MainCharacteristictTa=25°CnonrepetitiveFig.3SurgeReversePowerRatingsTimet(s)1.010NonrepetitiveSurgeReversesPowerPRSM(W)10210310410–210–11.010–510–410–3PRSM0210864250200150100502001501005000Fig.2PowerDissipationvs.AmbientTemperatureAmbientTemperatureTa(°C)PowerDissipationPd(mW)1.0mm0.6mmPrintedcircuitboard25621.6tmmMaterial:GlassEpoxyResin+CuFoil××CuFoil10–510–610–410–310–2Fig.1Zenercurrentvs.ZenervoltageZenerVoltageVZ(V)ZenerCurrentIZ(A)HZM6.2ZMFARev.1.00Jun08,2005page4of51.0101021031041010210310–210–11.0Fig.4TransientThermalImpedance*Timet(s)TransientThermalImpedanceZth(°C/W)Note:Measurementvaluebyforwardbias.HZM6.2ZMFARev.1.00Jun08,2005page5of5PackageDimensionscLL1A2AA1Patternofterminalpositionareasee1l1b2DAAbEHEeA1.0-1.4A10-0.1A21.01.11.3b0.30.40.5c0.110.160.26D2.72.93.1E1.51.61.8-0.95-eHE2.52.83.0L-0.6L10.15---b2--0.55-2.15-e1l1--0.85DimensioninMillimetersMinNomMaxReferenceSymbolSC-74A0.013gMASS[Typ.]MPAK-5/MPAK-5VPLSP0005ZC-ARENESASCodeJEITAPackageCodePreviousCodebcA—ASectionKeepsafetyfirstinyourcircuitdesigns!1.RenesasTechnologyCorp.putsthemaximumeffortintomakingsemiconductorproductsbetterandmorereliable,butthereisalwaysthepossibilitythattroublemayoccurwiththem.Troublewithsemiconductorsmayleadtopersonalinjury,fireorpropertydamage.Remembertogivedueconsiderationtosafetywhenmakingyourcircuitdesigns,withappropriatemeasuressuchas(i)placementofsubstitutive,auxiliarycircuits,(ii)useofnonflammablematerialor(iii)preventionagainstanymalfunctionormishap.Notesregardingthesematerials1.ThesematerialsareintendedasareferencetoassistourcustomersintheselectionoftheRenesasTechnologyCorp.productbestsuitedtothecustomer'sapplication;theydonotconveyanylicenseunderanyintellectualpropertyrights,oranyotherrights,belongingtoRenesasTechnologyCorp.orathirdparty.2.RenesasTechnologyCorp.assumesnoresponsibilityforanydamage,orinfringementofanythird-party'srights,originatingintheuseofanyproductdata,diagrams,charts,programs,algorithms,orcircuitapplicationexamplescontainedinthesematerials.3.Allinformationcontainedinthesematerials,includingproductdata,diagrams,charts,programsandalgorithmsrepresentsinformationonproductsatthetimeofpublicationofthesematerials,andaresubjecttochangebyRenesasTechnologyCorp.withoutnoticeduetoproductimprovementsorotherreasons.ItisthereforerecommendedthatcustomerscontactRenesasTechnologyCorp.oranauthorizedRenesasTechnologyCorp.productdistributorforthelatestproductinformationbeforepurchasingaproductlistedherein.Theinformationdescribedheremaycontaintechnicalinaccuraciesortypographicalerrors.RenesasTechnologyCorp.assumesnoresponsibilityforanydamage,liability,orotherlossrisingfromtheseinaccuraciesorerrors.PleasealsopayattentiontoinformationpublishedbyRenesasTechnologyCorp.byvariousmeans,includingtheRenesasTechnologyCorp.Semiconductorhomepage().4.Whenusinganyoralloftheinformationcontainedinthesematerials,includingproductdata,diagrams,charts,programs,andalgorithms,pleasebesuretoevaluateallinformationasatotalsystembeforemakingafinaldecisionontheapplicabilityoftheinformationandproducts.RenesasTechnologyCorp.assumesnoresponsibilityforanydamage,liabilityorotherlossresultingfromtheinformationcontainedherein.5.RenesasTechnologyCorp.semiconductorsarenotdesignedormanufacturedforuseinadeviceorsystemthatisusedundercircumstancesinwhichhumanlifeispotentiallyatstake.PleasecontactRenesasTechnologyCorp.oranauthorizedRenesasTechnologyCorp.productdistributorwhenconsideringtheuseofaproductcontainedhereinforanyspecificpurposes,suchasapparatusorsystemsfortransportation,vehicular,medical,aerospace,nuclear,orundersearepeateruse.6.ThepriorwrittenapprovalofRenesasTechnologyCorp.isnecessarytoreprintorreproduceinwholeorinpartthesematerials.7.IftheseproductsortechnologiesaresubjecttotheJapaneseexportcontrolrestrictions,theymustbeexportedunderalicensefromtheJapanesegovernmentandcannotbeimportedintoacountryotherthantheapproveddestination.Anydiversionorreexportcontrarytotheex