2SK2749中文资料

2SK27492006-11-101TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(π−MOSIII)2SK2749ChopperRegulator,DC−DCConverterandMotorDriveApplicationszLowdrain−sourceONresistance:RDS(ON)=1.6Ω(typ.)zHighforwardtransferadmittance:|Yfs|=5.0S(typ.)zLowleakagecurrent:IDSS=100μA(max)(VDS=720V)zEnhancementmode:Vth=2.0~4.0V(VDS=10V,ID=1mA)AbsoluteMaximumRatings(Ta=25°C)CharacteristicsSymbolRatingUnitDrain−sourcevoltageVDSS900VDrain−gatevoltage(RGS=20kΩ)VDGR900VGate−sourcevoltageVGSS±30VDC(Note1)ID7DraincurrentPulse(Note1)IDP21ADrainpowerdissipation(Tc=25°C)PD150WSinglepulseavalancheenergy(Note2)EAS682mJAvalanchecurrentIAR7ARepetitiveavalancheenergy(Note3)EAR15mJChanneltemperatureTch150°CStoragetemperaturerangeTstg−55~150°CNote:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/DeratingConceptandMethods)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).ThermalCharacteristicsCharacteristicsSymbolMaxUnitThermalresistance,channeltocaseRth(ch−c)0.833°C/WThermalresistance,channeltoambientRth(ch−a)50°C/WNote1:Ensurethatthechanneltemperaturedoesnotexceed150°C.Note2:VDD=90V,Tch=25°C(initial),L=25.5mH,IAR=7A,RG=25ΩNote3:Repetitiverating:pulsewidthlimitedbymaximumchanneltemperatureThistransistorisanelectrostatic-sensitivedevice.Pleasehandlewithcaution.Unit:mm1.GATE2.DRAIN(HEATSINK)3.SOURCEJEDEC―JEITA―TOSHIBA2-16C1BWeight:4.6g(typ.)2SK27492006-11-102ElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitGateleakagecurrentIGSSVGS=±25V,VDS=0V――±10μAGate−sourcebreakdownvoltageV(BR)GSSIG=±10μA,VDS=0V±30――VDraincut−offcurrentIDSSVDS=720V,VGS=0V――100μADrain−sourcebreakdownvoltageV(BR)DSSID=10mA,VGS=0V900――VGatethresholdvoltageVthVDS=10V,ID=1mA2.0―4.0VDrain−sourceONresistanceRDS(ON)VGS=10V,ID=3.5A―1.62.0ΩForwardtransferadmittance|Yfs|VDS=10V,ID=3.5A1.255.0―SInputcapacitanceCiss―1500―ReversetransfercapacitanceCrss―30―OutputcapacitanceCossVDS=25V,VGS=0V,f=1MHz―140―pFRisetimetr―35―Turn−ontimeton―80―Falltimetf―50―SwitchingtimeTurn−offtimetoff―220―nsTotalgatecharge(gate−sourceplusgate−drain)Qg―55―Gate−sourcechargeQgs―30―Gate−drain(“miller”)ChargeQgdVDD≈400V,VGS=10V,ID=7A―25―nCSource−DrainRatingsandCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitContinuousdrainreversecurrent(Note1)IDR―――7APulsedrainreversecurrent(Note1)IDRP―――21AForwardvoltage(diode)VDSFIDR=7A,VGS=0V――−1.9VReverserecoverytimetrr―1400―nsReverserecoverychargeQrrIDR=7A,VGS=0VdIDR/dt=100A/μs―14―μCMarkingK2749TOSHIBALotNo.Alineindicateslead(Pb)-freepackageorlead(Pb)-freefinish.PartNo.(orabbreviationcode)2SK27492006-11-1032SK27492006-11-1042SK27492006-11-105⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DDVDSSVDSSASVBBIL21E2RG=25ΩVDD=90V,L=25.5mH2SK27492006-11-106RESTRICTIONSONPRODUCTUSE20070701-EN•Theinformationcontainedhereinissubjecttochangewithoutnotice.•TOSHIBAiscontinuallyworkingtoimprovethequalityandreliabilityofitsproducts.Nevertheless,semiconductordevicesingeneralcanmalfunctionorfailduetotheirinherentelectricalsensitivityandvulnerabilitytophysicalstress.Itistheresponsibilityofthebuyer,whenutilizingTOSHIBAproducts,tocomplywiththestandardsofsafetyinmakingasafedesignfortheentiresystem,andtoavoidsituationsinwhichamalfunctionorfailureofsuchTOSHIBAproductscouldcauselossofhumanlife,bodilyinjuryordamagetoproperty.Indevelopingyourdesigns,pleaseensurethatTOSHIBAproductsareusedwithinspecifiedoperatingrangesassetforthinthemostrecentTOSHIBAproductsspecifications.Also,pleasekeepinmindtheprecautionsandconditionssetforthinthe“HandlingGuideforSemiconductorDevices,”or“TOSHIBASemiconductorReliabilityHandbook”etc.•TheTOSHIBAproductslistedinthisdocumentareintendedforusageingeneralelectronicsapplications(computer,personalequipment,officeequipment,measuringequipment,industrialrobotics,domesticappliances,etc.).TheseTOSHIBAproductsareneitherintendednorwarrantedforusageinequipmentthatrequiresextraordinarilyhighqualityand/orreliabilityoramalfunctionorfailureofwhichmaycauselossofhumanlifeorbodilyinjury(“UnintendedUsage”).UnintendedUsageincludeatomicenergycontrolinstruments,airplaneorspaceshipinstruments,transportationinstruments,trafficsignalinstruments,combustioncontrolinstruments,medicalinstruments,alltypesofsafetydevices,etc..UnintendedUsageofTOSHIBAproductslistedinhisdocumentshallbemadeatthecustomer’sownrisk.•Theproductsdescribedinthisdocumentshallnotbeusedorembeddedtoanydownstreamproductsofwhichmanufacture,useand/orsaleareprohibitedunderanyapplicablelawsandregulations.•Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedbyimplicationorothe