ICP等离子体刻蚀系统射频偏压的实验研究-张庆钊

29　520085　　　　JOURNALOFSEMICONDUCTORSVol.29　No.5May,2008＊(:2006AA843134)(:2007CB935302).Email:[e-mail]　2007-10-08,2007-11-092008ICP＊张庆钊　谢常青　刘　明　李　兵　朱效立　陈宝钦(,　100029):(ICP)———.,300mmICP.,(),,,、.:;;ICP;PACC:5225;5250　　　EEACC:2310;2315:TN405.98　　　:A　　　:0253-4177(2008)05-0980-041　,,,.[1],:[2],,;,..ICP,(Vdc)[3],,.,.(SRF/BRF),.,300mmICP,,,,.2　ICP1.300mmICP,13.56MHz,,;,[4]..,200sccm.3　、,、.,.,,,.1　Fig.1　SchematicoftheICPetcher5:　ICP2　　(a)10mTorr;(b)25mTorr;(c)85mTorrFig.2　RelationshipbetweentheVdcandSRF　(a)Gaspres-sureis10mTorr;(b)Gaspressureis25mTorr;(c)Gaspressureis85mTorr3.1　10,2585mTorr;60,80,100,120160W,,2.2,,,,,85mTorr,.,,,.25mTorr,60W,800W,,,.,10mTorr,,60W160W,800W,.1.1　10mTorr,Table1　ValuesofSRFandBRFatturnpointswhengaspres-sureis10mTorr/W6080100120160/W500600600800800,,,,,.2(a),(b)(c),,,,,.,,,,,.[5,6]:(1),,,,,(),3.,,[7]:,(),,,.,;,,,,(),4.(2),,,,,,3　10mTorr,Fig.3　Ratioofelectrontopositiveion,underdifferentsourceRFpowerswhengaspressureis10mTorr981　　　　294　10mTorr,Fig.4　EnergyofelectronunderdifferentsourceRFpowerswhengaspressureis10mTorr,,,.3.2　10,2585mTorr;400,500,600,8001000W,,5.5　　(a)10mTorr;(b)25mTorr;(c)85mTorrFig.5　RelationshipbetweentheVdcandBRF　(a)Gaspressureis10mTorr;(b)Gaspressureis25mTorr;(c)Gaspressureis85mTorr6　　(a)60W;(b)100W;(c)160WFig.6　RelationshipbetweentheVdcandgaspressure　(a)BRFpoweris60W;(b)BRFpoweris100W;(c)BRFpoweris160W5,,,,.,10mTorr,8001000W,.,,;,,.,,;,.,.9825:　ICP3.3　60,100160W;400,500,600,8001000W,,6.6,,.,,;,,.,,,.,,.4　———.,(),,,、.,、、.,.[1]　InternationalTechnologyRoadmapforSemiconductor,2005[2]　TachiS.Impactofplasmaprocessingonintegratedcircuittech-nologymigrationfrom1nmto100nmandbeyond.JVacSciTechnol,2003,A21(5):131[3]　KellyPG,HallR,O'BrienJ,etal.Studiesofmid-frequencypulsedDCbiasing.JVacSciTechnol,2001,A19(6):2856[4]　LeeJW,DonohueJF,MackenzieKD,etal.Mechanismofhighdensityplasmaprocessesforion-drivenetchingofmaterials.Solid-StateElectron,1999,43:1769[5]　BoylePC,EllingboeAR,TurnerMM.ElectrostaticmodelingofdualfrequencyRFplasmadischarges.PlasmaSourcesSciTechn-ol,2004,13:493[6]　MahonyCMO,MaguirePD,GrahamWG.Electricalcharacter-izationofradiofrequencydischarges.PlasmaSourcesSciTechn-ol,2005,14:60[7]　ZhangHB,ZhangD.Plasmatechnologyinelectronicengineer-ing.Beijing:SciencePress,2002(inChinese)[,,..:,2002]RFBiasVoltageinICPEtchSystems＊ZhangQingzhao,XieChangqing,LiuMing,LiBing,ZhuXiaoli,andChenBaoqin(LaboratoryofNanofabricationandNovelDevicesIntegration,InstituteofMicroelectronics,ChineseAcademyofSciences,Beijing　100029,China)Abstract:InordertounderstandtherelationshipbetweenRFbiasvoltageonbottomelectrodeandotherprocessparameters,wede-signedanexperiment.Theresultsindicatedthattherelationshipvariesdependingontheotherparameters'variation.Theupperelec-trodeRFpower,thebottomelectrodeRFpower,andgaspressurealldistinctlyaffectthisrelationship.Keywords:plasma;RFbiasvoltage;ICP;dryetchPACC:5225;5250　　　EEACC:2310;2315ArticleID:0253-4177(2008)05-0980-04＊ProjectsupportedbytheNationalHighTechnologyResearchandDevelopmentProgramofChina(No.2006AA843134)andtheStateKeyDevelop-mentProgramforBasicResearchofChina(No.2007CB935302)Correspondingauthor.Email:[e-mail]　Received8October2007,revisedmanuscriptreceived9November20072008ChineseInstituteofElectronics983