半导体特性分析实验

PNPNI-VPNPNPNI-V4200-SCS1PNPNPNPNPNPNPNPNPNPNPNPNPNIBOµAPNVFVF0.3V0.7VPNVZPNVZPNPNI-VPNVIPN1VrVr12PNPN-1TkeUexp[IIB0−⎟⎟⎠⎞⎜⎜⎝⎛=1IPNI0UPNTkBe38Tk/eB≈()1Tk/eUexpB1⎟⎟⎠⎞⎜⎜⎝⎛=TkeUexpIIB02PNePNTkB2TkeUlnIlnIB0+=3UlnIe/kBTkB1()Tk2/eUexpB2()Tk/eUexpBmm211024200-SCS3PNI-V4SMU1”SMU2”56I-V7kB[1][2][3]PNI-Ve/kB11992.1Keithley4200SCS(KeithleyInstruments,Inc.)Keithley,,MEMS.IVSMUPREAMPSMU4SMU100mA21V210V10mASMU1A21VSMU0.1pA1µVSMU4200-SCS4200-PASMUSMU0.1fA2SMU8SMU4SMU4200-SCSSMUSMUWindowsXPGPIBRS-232DVD,USBIV&CV(KITEExcelKITE24200SCSNMOSMOSFET(1)4200SCSCtrl+Alt+Delkiuser(2)KITEKITE(KeithleyInteractiveTestEnvironment)FileOpenProject4defaultprojectC:\S4200\kiuser\projects\default\default.kpr4OpenProject5ProjectNavigation(1)ProjectNavigationprojectViewProjectNavigation5(2)ProjectNavigationDefault-Subsite-4Teminal-n-fetvds-id6Definition6ForceMeasureGraphGraphProjectNavigation(Run)Run4200SCSMEASURERunMEASURE6KITEProjectNavigationDefinitionGraphSheet(3)ExcelTabSheetvds-idSheetSaveAsNMOS4Teminal-n-fetvgs-idPMOSSubsite4terminal-p-fet