PH1214-2M中文资料

anAMPcompanyRadarPulsedPowerTransistor,2W,loopsPulse,10%Duty1.2-1.4GHzPH1214-2MFeaturesv2.00c_I-NPNSiliconMicrowavePowerTransistorCommonBaseConfigurationBroadbandClassCOperationInterdigitatedGeometryDiffusedEmitterBallastingResistorsGoldMetalizationSystemInternalInputImpedanceMatchingHermetii:Metal/CeramicPackage..?90=.01c(2.29Z.25)AbsoluteMaximumRatingsat25°CParameterCollector-EmitterVoltageSymbolVCESRating65UnitsV.1371.313Emitter-BaseVoltageCollectorCurrent(Peak)TotalPowerDissipationJunctionTemperatureStorageTemperatureTST0-65to~200“CUNLTSSII-KERWIS:N3TE%T:L:RAN:ESAREINCHES1.035’(MILL!NET:RS513MM)ElectricalCharacteristicsat25°CParameter)Symbol)MinMaxUnitsTestConditionsCollector-EmitterBreakdownVoltageCollector-EmitterLeakageCurrentThermalResistanceBVCESICESRTHLKX65-VI,=4mA500PAvc,=40v17YXVV,,=28V,P,,=400mW,F=l.20,1.30,1.40GHz)OutputPowerIPOUTI2.0I-1WIV,,=28V.P,,=4OOmW,F=1.20,1.30,1.40GHzIPowerGainCollectorEfficiencyInputReturnLossGP‘lCRL7.0-dBI’,,=28V,P,,=400mW,F=l.20,1.30,1.40GHz40-%Vcc=28V,P,,=400mW,F=l.20,1.30,1.40GHz6-dBV,,=28V,P,,=400mW,F=l.20,1.30,1.40GHzLoadMismatchToleranceLoadMismatchStablilityVSWR-T-VSWR-S-3:l-V,,=28V,P,,=400mW,F=l.20,1.30,1.40GHz1.5:1-V,,=28V,P,,=400mW,F=l.20,1.30,1.40GHzBroadbandTestFixtureImpedancesF(GHz)Z,,(Q)Z,,(Q)1.209.5-j6.311.6+j331.308.6-j4.912.O+j34TESTFiXTURCTESTFiXTUREINPJTiItJT~.z-ICRCLliT+CIRCKTI50J7x,7$IIII1.408.1-j3.611.4+j37---SpecificationsSubjecttoChangeWithoutNotice.9-114NorthAmerica:Tel.[phone]nAsia/Pacific:Tel.[phone]Fax[phone]Fax[phone]M/A-COM,Inc.Europe:Tel.[phone]Fax[phone]RadarPulsedPowerTransistor,2WPHI214-2MRFTestFixtureINPUT50OHMS“ccP340500I3-,2GROUNDGROUNDOUTPUT50OHMSARTWORKDIMENSICINSINMILSF’PIR-I-SL-IS-rClc2100pFATCSIZEAc350uF50VIJLTSQlPH1214-2MBOARDTYPE:ROGERS6010,5,025”THICK,ER=loo5SpecificationsSubjecttoChangeWithoutNotice.M/A-COM,Inc.9-115NorthAmerica:Tel.[phone]nAsia/Pacific:Tel.[phone]nEurope:Tel.[phone]Fax[phone]Fax[phone]Fax[phone]