Anandigics Produicts update - Dec 2013

1ProprietaryandConfidential4/24/2020ProprietaryandConfidentialANADIGICSCellularandWIFIProductsUpdateDec20132ProprietaryandConfidential4/24/2020AgendaANADIGICS公司简介PA产品技术交流ANADIGICS产品简介3ProprietaryandConfidential4/24/2020AboutANADIGICSLeadingproviderofpoweramplifiersandfront-endICsservingthefollowingendmarkets:–Cellular–Infrastructure–WiFiKeysuppliertoTier1customersworldwide•Foundedin1985•HeadquarteredinNewJersey•Over500employeesin10locations•NASDAQListing:ANADsince1995•ISO9001Certified4ProprietaryandConfidential4/24/2020LeadershipTeamBradYatesVicePresidentWorldwideH.R.JohnvanSadersChiefOperationsOfficerMichaelCanonicoSr.VicePresidentWorldwideSalesDaveCresciPresidentJerryMillerVicePresidentCellularTimLaverickVicePresidentInfrastructureDougDoppVicePresidentOperationsRobertBayrunsVicePresidentCTORonMichelsBoDChairman&CEOJonathanGriffithVicePresidentWiFiBusinessSegmentsandWorldwideSalesOperationsTerryGallagherVicePresidentChiefFinancialOfficerCorporateStaff5ProprietaryandConfidential4/24/2020ANADIGICS–YourRFAdvantageWiFiSmartphonesTabletsComputingRoutersHomeEntertainmentInfrastructureCATVSmallCellWirelessCellularHandsetsSmartphonesTabletsAutomotiveM2M6ProprietaryandConfidential4/24/2020ANADIGICSAdvantagesTechnology/Quality/Cost–ProcessPortfolio–ILD–BiFETPerformance–HPMPAEdesigns–Performanceoverallpowerlevels7ProprietaryandConfidential4/24/2020AStrongProcessPortfoliothroughoutthecompanyGaAsMESFETpHEMT6”GaAsFabRFSilicon(fabless)InGaPHBTInGaP-Plus™HBT8ProprietaryandConfidential4/24/2020LegacyAirbridgeHBT-ILDFrontsideProcessUniqueILDTechnologyDrivingGrowthNiCrResistorpHEMTHBTI2I3M2M3GaAsM2M1•3metallevelsprovidesverticalstackingofcomponentsandlines•Nosupportpostsrequired.•PlanarwafersignificantlyshrinksviaareaandmetallinedimensionsCAP9ProprietaryandConfidential4/24/2020MarriageofTechnologiesforuniquecustomervalueILD+BiFET:AbilitytointegratecomponentsthatareSMDsforothersuppliersAllowsANADtorealizesuperiorperformancepartswithcostparitywithbiggercompetitorsILDBiFETHBTPowerTransistorspHEMTSwithes10ProprietaryandConfidential4/24/2020IntegrationandInnovationvsCompetitionANADIGICSSingleIntegratedDieCompetitorACompetitorSAdditionalCMOSDie11ProprietaryandConfidential4/24/2020CompetitorSVs.AWT653OCompetitorSPACMOSforBiascontrolAWT6530ANADIGICSintegratedsolution12ProprietaryandConfidential4/24/2020ProprietaryandConfidentialANADKeyCellularPrograms13ProprietaryandConfidential4/24/2020FamilyPerformancecomparisonsHPMPAELPMPAEProEficient™PlusPriceProEficient™PriceProVantageTMPrice14ProprietaryandConfidential4/24/2020ANADIGICSHighEfficiency™PAProducts3newTypesofHighEfficiencyPAfamiliesdevelopedtosupportvariousplatformrequirements–Single/dualbandsinglechainfamily(ProVantage™PAfamily)AWT50xx,AWT6530,AWC6383,ALT6761•3x3singlebandPA,(withsinglegainpath)-2x2.5forLTEsinglebandPAs•3x4DualBandPAs,(withsinglegainpath)•3X4.2broad-bandedPA(withsinglegainpath)•Upto49%efficiencyinHPM•APTCompliant-ETcompliant•CouplerOptional•2-3biasmodesforlowcostperformanceenhancement–Singlebandfamily(ProEficient™PAFamily):AWT665x.•3x3singlebandwithHELPFeature•Provides48%efficiencyinHPM•CanbeusedwithoutDC/DC•APTCompliant•LPMforbacked-offperformanceenhancement–Dualbandfamily(ProEficient™PlusPAfamily):AWT675x,AWT676x,ALT672x•3x4mmpackagesand3x3packageswithenhancedHELPFeature•45%efficiencyinHPM•35-41%efficiencyinLPM(@3.4V)•NODC/DCrequired15ProprietaryandConfidential4/24/2020WCDMAR99ComparisonNewProEficient™2-StateArchitectureHPMMPMLPMHPMMPMHPM28dBm17dBm8-9dBm3-StateProEficient™2-State2-StateLPMALT6701AWT6631AWT6651TypicalValuesforBand1HELP4™HELP3DC™ProEficient™Biasmodes322WCDMAHPMoutputpower(dBm)28.428.2528.5WCDMAHPMefficiency(PAE%)41%41%48%LTEHPMoutputpower(dBm)2727.2527.25LTEHPMefficiency(PAE%)35%36%43%LPMquiescentcurrent(mA)2820LTEcurrentatMaxPout(mA)421425355WCDMADG09ave.current(mA)212928Gain(typ.)@16-17dBm(dB)191315DG09avecurrentwithAPT(mA)191312Vccminimum(V)2.20.50.5Packagefootprint(mm)3x33x33x316ProprietaryandConfidential4/24/2020ProEficient™PlusHighEfficiencyPAsBestinclassperformanceoverallrequiredpowerlevelswithouttheuseofaDC-DCconverter–NosignificantdegradationinperformanceinLPM(45%40%)LowercostarchitectureImprovedILPCperformanceTargetedtodualbandandspecificsinglebandLTEsolutions17ProprietaryandConfidential4/24/2020NewProEficient™Plus2-StateArchitectureWCDMAR99Comparisonvs.existinggenerationsHPMMPMLPMHPMMPMHPM28dBm17dBm8-9dBm3-StateProEficient™Plus2-StateExisting2-StateParameterALT6701WCDMARel99NoSMPSAPTDG09(mA)22.116.7Ibattq+Icq(mA)41.5Eff@maxpower40%40%Eff@+17dBm31%31%Eff@+13.5dBm21%31%Eff@+3.5dBm13%17%Gain@+17dBm(dB)19/1019/10AWT6631NoSMPSAPT31.519.810340%40%24%24%14%19%4%8%13.513.5DualBandPANoSMPSAPT22135446%46%41%41%21%40%8%15%14.514.5LPMWorld’sbestcombinationofhighandlowpowermodeefficiency18ProprietaryandConfidential4/24/2020ProprietaryandConfidential3x4.2mmBroadDualBandPASolutionsforMTKChipset19ProprietaryandConfidential4/24/2020AWT6530BroadbandedPAplatform–SupportBands1/2/4/5/8(Canincludeothersatellitebandsasrequired)MTKRF