IRF150

1FileNumber1824.3CAUTION:Thesedevicesaresensitivetoelectrostaticdischarge;followproperESDHandlingProcedures.|Copyright©IntersilCorporation1999IRF15040A,100V,0.055Ohm,N-ChannelPowerMOSFETThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits.FormerlyDevelopmentalTypeTA17421.Features•40A,100V•rDS(ON)=0.055Ω•SinglePulseAvalancheEnergyRated•SOAisPowerDissipationLimited•NanosecondSwitchingSpeeds•LinearTransferCharacteristics•HighInputImpedance•RelatedLiterature-TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”SymbolPackagingJEDECTO-204AEOrderingInformationPARTNUMBERPACKAGEBRANDIRF150TO-204AEIRF150NOTE:Whenordering,includetheentirepartnumber.GDSDRAIN(FLANGE)SOURCE(PIN2)GATE(PIN1)DataSheetMarch19992AbsoluteMaximumRatingsTC=25oC,UnlessOtherwiseSpecifiedIRF150UNITSDraintoSourceVoltage(Note1).......................................................VDS100VDraintoGateVoltage(RGS=20kΩ)(Note1)...........................................VDGR100VContinuousDrainCurrent.............................................................ID40ATC=100oC......................................................................ID25APulsedDrainCurrent(Note3).........................................................IDM160AGatetoSourceVoltage..............................................................VGS±20VMaximumPowerDissipation...........................................................PD150WLinearDeratingFactor..................................................................1.2W/oCSinglePulseAvalancheEnergyRating(Note4)...........................................EAS150mJOperatingandStorageTemperature...............................................TJ,TSTG-55to150oCMaximumTemperatureforSolderingLeadsat0.063in(1.6mm)fromCasefor10s.............................................TLPackageBodyfor10s,SeeTechbrief334.............................................Tpkg300260oCoCCAUTION:Stressesabovethoselistedin“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thisisastressonlyratingandoperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.NOTE:1.TJ=25oCto125oC.ElectricalSpecificationsTC=25oC,UnlessOtherwiseSpecifiedPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITSDraintoSourceBreakdownVoltageBVDSSVGS=0V,ID=250μA(Figure10)100--VGatetoThresholdVoltageVGS(TH)VGS=VDS,ID=250μA2.0-4.0VZeroGateVoltageDrainCurrentIDSSVDS=RatedBVDSS,VGS=0V--25μAVDS=0.8xRatedBVDSS,VGS=0V,TJ=125oC--250μAOn-StateDrainCurrent(Note2)ID(ON)VDSID(ON)xrDS(ON)MAX,VGS=10V40--AGatetoSourceLeakageCurrentIGSSVGS=±20V--±100nADraintoSourceOnResistance(Note2)rDS(ON)VGS=10V,ID=20A(Figures8,9)-0.0450.055ΩForwardTransconductance(Note2)gfsVDSID(ON)xrDS(ON)MAX,ID=20A(Figure12)9.011-STurn-OnDelayTimetd(ON)VDD=24V,ID≈20A,RG=4.7Ω,RL=1.2Ω(Figures17,18)MOSFETSwitchingTimesareEssentiallyIndependentofOperatingTemperature--35nsRiseTimetr--100nsTurn-OffDelayTimetd(OFF)--125nsFallTimetf--100nsTotalGateCharge(GatetoSource+GatetoDrain)Qg(TOT)VGS=10V,ID=50A,VDS=0.8xRatedBVDSS,Ig(REF)=-1.5mA(Figures14,19,20)GateChargeisEssentiallyIndependentofOperatingTemperature-63120nCGatetoSourceChargeQgs-27-nCGatetoDrain“Miller”ChargeQgd-36-nCInputCapacitanceCISSVGS=0V,VDS=25V,f=1.0MHz(Figure11)-2000-pFOutputCapacitanceCOSS-1000-pFReverseTransferCapacitanceCRSS-350-pFInternalDrainInductanceLDMeasuredbetweentheContactScrewontheFlangethatisClosertoSourceandGatePinsandtheCenterofDieModifiedMOSFETSymbolShowingtheInternalDevicesInductances-5.0-nHInternalSourceInductanceLSMeasuredfromtheSourceLead,6mm(0.25in)fromtheFlangeandtheSourceBondingPad-12.5-nHThermalImpedanceJunctiontoCaseRθJC--0.8oC/WThermalImpedanceJunctiontoAmbientRθJAFreeAirOperation--30oC/WLSLDGDSIRF1503SourcetoDrainDiodeSpecificationsPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITSContinuousSourcetoDrainCurrentISDModifiedMOSFETSymbolShowingtheIntegralReverseP-NJunctionDiode--40APulseSourcetoDrainCurrent(Note3)ISDM--160ADiodeSourcetoDrainVoltage(Note2)VSDTJ=25oC,ISD=40A,VGS=0V(Figure13)--2.5VReverseRecoveryTimetrrTJ=150oC,ISD=40A,dISD/dt=100A/μs-600-nsReverseRecoveryChargeQRRTJ=25oC,ISD=5.5A,dISD/dt=100A/μs-3.3-μCNOTES:2.Pulsetest:pulsewidth≤300μs,dutycycle≤2%.3.Repetitiverating:pulsewidthlimitedbyMaxjunctiontemperature.SeeTransientThermalImpedancecurve(Figure3).4.VDD=10V,startingTJ=25oC,L=170μH,RG=50Ω,PeakIAS=40A.SeeFigures15,16.TypicalPerformanceCurvesUnlessOtherwiseSpecifiedFIGURE1.NORMALIZEDPOWERDISSIPATIONvsCASETEMPERATUREFIGURE2.MAXIMUMCONTINUOUSDRAINCURRENTvsCASETEMPERATUREFIGURE3.MAXIMUMTRANSIENTTHERMALIMPEDANCEGDS0501001500TC,CASETEMPERATURE(oC)POWERDISSIPATIONMULTIPLIE