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1acceptor受主2allowedenergyband允带3binarysemiconductor二元半导体4chargeneutralitycondition电中性条件5compensatedsemiconductor补偿半导体6conductionbandandvalenceband导带和价带7effectivemass有效质量8densityofstatesfunction状态密度函数9diamondstructure金刚石结构10diffusioncoefficient扩散系数11donor施主12driftvelocity漂移速度13electronandhole电子和空穴14elementalsemiconductor元素半导体15equilibriumcarrierconcentration热平衡载流子浓度16expitaxy外延17extrinsicsemiconductor非本征半导体18Fermienergy(orlevel)费米能级19Forbiddenenergyband禁带20indirectbandbapsemiconductor非直接带隙半导体21intrinsicsemiconductor本征半导体22majoritycarrier多数载流子23MBE分子束外延24Millerindices密勒指数25minoritycarrier少数载流子26mobility迁移率27MOCVD金属有机气相沉积28nondegeneratesemiconductor非简并半导体29n-typematerialn型材料30Pauliexclusionprinciple泡利不相容原理31phonon声子32photon光子33primitivecell原胞34quantumstate量子态35quaternarysemiconductor四元半导体36scattering散射37substrate衬底38thermalmotion热运动39unitcell单胞40wave-particleduality波粒二相性41continuityequations连续性方程42diffusionlength扩散长度43diffusioncoefficient扩散系数44Einsteinrelationship爱因斯坦关系45p-njunctionp-n结46built-involtage内建电势差47carrierlifetime载流子寿命48spacechargeregion空间电荷区49depletionwidth耗尽宽度50saturationdriftvelocity饱和迁移速度51.Insulatinggatebipolartransistor(IGBT)绝缘栅晶体管52.FET场效应晶体管53.metaloxidesemiconductor(MOS)金属氧化物半导体54.MOSFETMOS场效应晶体管55.HeterostructureFET(HFET)异质结晶体管56.Highelectronmobilitytransistor(HEMT)高电子迁移率晶体管57.IntegratedCircuits(IC)集成电路58.LightEmittingDiode(LED)发光二极管59.PhotoDiode(PD)光电二极管60.Latticeconstant晶格常数61.wurzite纤锌矿62.zincBlende闪锌矿63.SchottkyBarrierDiode(SBD)肖特基二极管64.Ohmiccontact欧姆接触65.heterojunction异质结66.twodimensionalelectrongas(2DEG)二维电子气