功率MOSFET应用研究及主电路设计

西安理工大学硕士学位论文功率MOSFET应用研究及主电路设计姓名：余娟申请学位级别：硕士专业：检测技术与自动化装置指导教师：孙强200503012070TeerCoatingsLtd.BM,GM,FordMulitArcUDPUniformDepositionandPlasmaCFUBMSIPTheClosedFieldUnbalancedMagnetronSputterIonPlatingsystem1-11-11-21-2A:)ln(pdCpdVViA+=Vip()dC()BCCDDE1,(,,,),2MOSFET3MOSFET4,MOSFETMOSFETMOSFETMOSFETMOSFETMOSFET1MOSFETMOSFETMOSFETMOSFET2MOSFETMOSFET3-1MOSFET3-2S1S1S2S2CissS1S2RonRoffCissVGS(on)Ron3-3RG,LS,RGLS1MOSFET3-40t1CissT1=RG*CissCiss=CGS+CGDl,3-6VGS(th)3-6RGCissR-CRG,VDD0~t1VGSIGSVGS)1(.)(issGCRtPthGSeVV--=3-1)ln(..)(thGSppissGVVVCRt-=3-2VPVINt1VGS(th),MOSFETt1VDDt1ID3-7CGDVDSt1t2CGDCGDiCGDhCGDh3-63-7CGDVDSt1t2,VGSt2t2~t4VGSIGCGDVDDt4VGST2=RG*CissCiss=CGS+CGDhMOSFETVGSRDS(on),VGSVDSVDS=IDSRDS(on)3-4bA1IGt1t2CGS+CGDA2CGDIGt2t32.3-50VGS0T2=RG*CGS+CGDHt2t3T1=RG*CGS+CGDiCisst=0t=t2,CGS+CGDt2t3VDSIDSRDS(on)VDSoffVGSVGSVGS(th)CGSMOSFETt3VDSVDSofft4MOSFET,MOSFET,,,Imax,t40~t2,MOSFET120V,MOSFET2MOSFET10~18V,15V2MOSFETMOSFETMOSFET3MOSFETMOSFETMOSFETMOSFETMOSFETMOSFET45,,MOSFET6MOSFET,,,7,,,8MOSFETTTLCMOS3-8aNPN-PNPMOSFETbPNMOSFET-VEMOSFETMOSFETNMOSFETdi/dtdv/dtRggDFWDGRVI0dv/dt2PNPPNP3-10QOFFMOSFETRgDONDONQOFFMOSFETQOFFnpnMOSFETGND-0.7VVDRV+0.7V,3NPN3-11PNPPNPNPNMOSFETNPNQOFFQINVPWMMOSFETQINV4NMOS3-12NPWMMOSFET0VRgQOFFCOSSMOSFETCISSMOSFETMOSFETMOSFETMOSFET3-133-13PMOSFETQ1Q2NMOSFETQ3Q4Q2Q2Q3Q3Q1Q4Q4Q1Q2Q3Q4Q3Q4Q3Q4R1D1Q3Q4D2C2R2Q2C3C4D3D4MOSFET,,MOSFET,,,3-14MOSFET,1015,,,,MOSFETMOSFET:1.MOSFET3-15aMOSFET,Ugs,MOSFET,MOSFET,,,,2.3-15(b),,,,;,,;,;3.3-15(c)MOSFET,MOSFET,,MOSFET,,MOSFET,,4.3-15(d)MOSFETVCCDCCMOSFETCMOSFET1010%,,,5.3-15(e),MOSFET,,MOSFETVGSthMOSFETCEIMOSFETCISSCEIICdVdtCEICISSMOSFETQGQGMOSFETQGQGSQGDQODQG-----QGS-----QGD-----QOD-----MOSFET3-16(a)MOSFETCGSVGSCGSVGS(th)VGSCEIQGCEI*VGSIGQGt(3-3)CEI-----IG-----MOSFETt----MOSFETAPTAPT8024LFLL,VDSS=800V,ID=31A,Crss=155pf,Ciss=4670pfRds(on)=0.24Qg=160nC,td(on)=9ns,tr=5ns,td(off)=23ns,tf=4nsAPT8024LFLL3-16(b)IXYSIXDD414MOSFETIGBT14ATTLCMOSIXDD4144PI,SI,CI,YI100kHZ,T=10us,tr=0.5%T=0.5%*10us=50nsIGQG/t=160nc/50ns=3.2ANIGtotal=3.2N,IXYSIXDD414,14A1.5~2,IXDD4143:Rg=2/3*VGS/IG=2/3*15/3.2=3.125:P=VGS*QG*f=15*160*10-9*100*103=0.24W:1.2.3.IXDD414NPMOSFET,int0)(****GGextOHgCCHonDRRRfQVRDP++=3-4int0)(****)1(GGextOLgCCLoffDRRRfQVRDP++-=3-5)()(offDonDDPPP+=ROH:;ROL:;RGext:;RGint:MOSFET;Qg:MOSFET;D:;f:RGintIXDD414ROH=ROL=0.6f=100kHZ:mwRRfQVRPPPGextOLgCCOHoffonD57.3746.010*100*10*160*18*6.0***39)()(=+=+=+=-IXDD41425oC:PIPD=833mwSIPD=1000mwCI,YIPD=12.5w15mw/oc,50ocPIPD50=833-15*50-25=458mwSI:PD50=1000-15*50-25=625mwCI,YI:PD50=12.5-15*50-25=12.125w37.5mwCI,YI5Vcc4.5~25VINTTLCMOSENOUTGND3-18IXDD414MOSFETT1c1,c250CissAPT8024LFLLCiss=4670pf,250*2*4670=467nf,c1=0.1uf,c2=4.7uf,c1c2c2c1ESRRg1,Rg2:10~100Rg:2.2~4.7Rg1,Rg2Rg3-18Rg1,Rg2D1:1N4148Rgs=10kRs=0.005Z1,Z2:18VZ1Z2,Z1,Z2IXDD414U1:CD4049U2:CD4011U3:CD4001LM339R1=10kR33k~15k5ku+u_C3:1pfV1:15VR4:1MC4:1pfC5:100pfQ1,Q2(APT8024LFLL)R1,C5U1U3RS(SRFF),SRFFSRFFENABLEMOSFET(Q3)MOSFETR2MOSFETSRFFRESETIXDD414RESETIXDD414SRFF2U1U2IXDD414SRFFQ1,Q2RsSRFFENABLEIXDD414Q315V3-19(a),D2,D3781515VD2,D3:1N4002;C5:0.33uF;C6:0.1uFV13-19bLM317T1.2V~37VC7:100nFC8:1uFR5:240VR6:5kVREF=1.25VIADJ60uA:656)1(RIRRVVoutADJREF++=MOSFET3-204MOSFETUCC3895EN,UCC3895,40KHZ,MOSFET,,,,13Bs200kHz1MHz2.PHILIPS3C90,TBS450.0=TBBSm15.031==APWPPOi245.098.024.0===hWPPPoiT485.0245.024.0=+=+=0001628.0)36615.01010044.010485.0(1014.011341104=××××××=⎟⎟⎠⎞⎜⎜⎝⎛×=-+xjWsfTKBfKKPAPK00.4Kf4Kj3663-30-31EEAp=0.000627cm4Ae=0.17cm2Aw=0.03cm2371.1415.01017.0101004154311=×××××==-mesfBAfKVNN1:N2:N3=1:1:1N1=N2=N3=154100kHZmm209.0=Δmm418.02=Δ243404/032.3221027.61010015.044.010485.010cmAAPfBKKPJsWfT=×××××××=×=-AXP=Ipmax/J=3.2/322.032=0.99mm2AWG#17AXP=1.039mm23-21MOSFETPCBLS1LS2LD1LD2,,,,,,VS,LS1LD1,VS,3-22,,VSVS,VS5V,,,,,,MOSFET21PCB,MOSFET,,MOSFET,MOSFET,2;MOSFET3,Li(LC)3-3ALC120nH,20nH20ns70ns,350%3-233-243-3A3-233-24ESR,ESLCISS50MOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETMOSFETRds(on),Rds(on)MOSFETRds(on)10-3/oCRds(on)Rds(on)MOSFETgmVGS(TH)Rds(on)gmVGS(TH)MOSFET1.gm,VGS(th),CinRds(on),2.,,MOSFET,,,,,,3,,45,1,,2,ID5A~40A10Ω~100Ω3,,11Rds(on)2VGS(th)3gm4Cgd,Cgs2.5(RG)6LG3.7LDLS8LSPspice,4-1Ld1V1Q1Ls2D1Q2VccR10R2Lg1LloadLs1RdRg21Ld2Lg2Rg1MOSFETAPT8024LFLLV15015V,-10VVcc300VLloadRd100kHzRg1,Rg2Lg1,Lg2,Ld1,Ld2,Ls1,Ls2MOSFETR1R2D14-14-24-2Q1,Q24-34-3Q1,Q21VGS(th)4-1VGS(th)(Q1)4.3914V,VGS(th)Q24.8914V4-4a4-4(a)Q1IDIDMOSFETQ1Rg1=3.5,Rg2=34-4b2Rdson4-1RdsonQ10.10703,RdsonQ20.307034-54-5a4-5bQ1Q2Rdson3Cgd4-1CgdQ12.8659E-12,CgdQ22.0659E-124-64-6aCgdCgdQ2Q2Q1CgdQ1CgdQ2,Q1Q24-7aRg2IDCgd4-7bRg2Rg2,4-7cRg24.Cgs4-1Cgs(Q1)=29.208E-12,Cgs(Q2)=26.208E-12,Q110%4-8CgsCgs5.gm4-1gm(Q1)1.0486E-6,gm(Q2)3.0486E-6Q21.LS4-1Ls,LS(Q1)30nH,LS(Q2)50nH10kHZ,100kHZ,500kHZ10kHZ100kHZLS500kHZQ1Q2Q1Q21/3Q22Ld4-1LdLd(Q1)30nHLd(Q2)50nH4-11Q2150nH,4-12Ld2ID(Q2)ID(Q1)Q11Rg4-1Rg4-13Rg1=0.5,Rg2=24-14,Rg1=3,Rg2=54-13Q1Q2RcRg1Rg24-15RcMOSFET,4-164-134-142.LgLg(Q1)30nH,Lg(Q2)150nHLgf=10kHZ100kHZ500kHZ4.2.14.2.1500kHZQ1Ld1=30nH,Q2Ld2=150nH,Q1:Lg1=30nH,Q2Lg2=50nH,Rg=8,5nH45nH:----------di/dtdv/dt-----SOA-------------