ANSI-ESDSTM5.2-1999

ESDSTM5.3.1-1999forElectrostaticDischargeSensitivityTesting–ChargedDeviceModel(CDM)ComponentLevel™™ElectrostaticDischargeAssociation7900TurinRoad,Bldg.3,Suite2Rome,NY13440-2069AnAmericanNationalStandardApprovedMay2,2001ESD-STM5.3.1-1999ESDAssociationStandardTestMethodforElectrostaticDischargeSensitivityTestingChargedDeviceModel(CDM)-ComponentLevelApprovedSeptember26,1999ESDAssociationESDAssociationstandardsandpublicationsaredesignedtoservethepublicinterestbyeliminatingmisunderstandingsbetweenmanufacturersandpurchasers,facilitatingtheinterchangeabilityandimprovementofproductsandassistingthepurchaserinselectingandobtainingtheproperproductforhisparticularneeds.Theexistenceofsuchstandardsandpublicationsshallnotinanyrespectprecludeanymemberornon-memberoftheAssociationfrommanufacturingorsellingproductsnotconformingtosuchstandardsandpublications.NorshallthefactthatastandardorpublicationispublishedbytheAssociationprecludeitsvoluntaryusebynon-membersoftheAssociationwhetherthedocumentistobeusedeitherdomesticallyorinternationally.RecommendedstandardsandpublicationsareadoptedbytheESDAssociationinaccordancewiththeANSIPatentpolicy.InterpretationofESDAssociationStandards:Theinterpretationofstandardsin-so-farasitmayrelatetoaspecificproductormanufacturerisapropermatterfortheindividualcompanyconcernedandcannotbeundertakenbyanypersonactingfortheESDAssociation.TheESDAssociationStandardsChairmanmaymakecommentslimitedtoanexplanationorclarificationofthetechnicallanguageorprovisionsinastandard,butnotrelatedtoitsapplicationtospecificproductsandmanufacturers.NootherpersonisauthorizedtocommentonbehalfoftheESDAssociationonanyESDAssociationStandard.Publishedby:ElectrostaticDischargeAssociation7900TurinRoad,Building3,Suite2Rome,NY13440-2069Copyright©1999byESDAssociationAllrightsreservedNopartofthispublicationmaybereproducedinanyform,inanelectronicretrievalsystemorotherwise,withoutthepriorwrittenpermissionofthepublisher.PrintedintheUnitedStatesofAmericaISBN:1-58537-011-8CautionNotice(ThisforewordisnotpartofESDAssociationStandardTestMethodSTM5.3.1-1999)iForewordExistingelectrostaticdischarge(ESD)testmodelsandstandardsmodelachargedobjectapproachingacomponentanddischargingthroughthecomponent.However,withtheincreasinguseofautomatedcomponenthandlingsystemsanotherpotentiallydestructivedischargemechanism,theChargedDeviceModel(CDM),becomesincreasinglyimportant.Inthechargeddevicemodelthecomponentitselfbecomescharged-usuallybyslidingonasurface-andisrapidlydischargedby(anESDevent)asitapproachesaconductiveobject.AccuratelyquantifyingtheCDMdischargeeventisverydifficult,ifnotimpossible,duetothelimitationsofthemeasuringequipmentanditsinfluenceonthedischargeitself.TheCDMdischargeisgenerallycompletedinafewnanoseconds,andpeakcurrentsoftensofampereshavebeenobserved.Thepeakcurrentintothecomponentwillvaryconsiderablydependingonalargenumberoffactorssuchas:packagetypeandparasitics.ThetypicalfailuremechanismfortheCDMmodel,observedinMOScomponents,isdielectricdamage,althoughotherdamagehasbeennoted.TheCDMsensitivityofagivencomponentisverypackagedependent.Thesameintegratedcircuit(IC)chipinasmalloutlinepackage(SOP)maybemoresusceptibletoCDMdamagethanitisinadual-in-line(DIL)package.ICsinthinsmalloutlinepackages(TSOP),orapingridarray(PGA)packagesusuallyhavethelowestCDMwithstandvoltage.BasedonresultsobtainedwithearlyCDMtesters,whichdidnotnecessarilymeetthewaveformsspecifiedinthisstandard,componentswithCDMsensitivitiesof500voltsorlessproveddifficulttohandlewithoutdamage.ComponentswithCDMsensitivitiesof1,500voltsormoredidnotexperiencemajorfieldproblemsusingproperhandlingtechniques.Thisdocumentdoesnotapplytotheso-calledSDMtesters:socketeddischargemodel.Waveformparametersforthe30pFverificationmoduleshouldbeusedforguidanceonly.Theymaybesubjecttochangeinfuturerevisionsofthisdocument.ThisStandardTestMethodwasprocessedandapprovedforsubmittaltotheESDAssociationStandardsCommitteeandtheAssociationBoardofDirectorsbytheDeviceTestingWorkingGroup,5.0.AtthetimethisstandardwasapprovedtheWorkingGrouphadthefollowingmembers:KoenVerhaege,ChairSarnoffCorporationJonBarthBarthElectronicsMikeChaineMicronTechnologyLouDeChairoLucentTechnologiesTomDiepTexasInstrumentsLeoG.HenryORYXInstrumentsCorporationIraCohenIntelMartiFarrisIntelHughHyattHygerPhysicsBobCareyLucentTechnologiesMarkKellyDelphiDelcoElectronicsSystemsThomasMeuseKeytekIanMorganAMDScottJohnsonAMDInadditionthefollowingpeoplemadesignificantcontributionstothisdocument:SatoshiIsofukuTokyoElectronicsTradingJosephVeltriFordTerryWelsherLucentTechnologiesLesAverySarnoffCorporationKarlheinzBockIMECiiTableofContents1.SCOPEANDPURPOSE..............................................................................................................................11.1SCOPE..........................................................................................................................................................11.2PURPOSE........................................................................................................................