FC封装基板简介

HDISubstrateJiangNanHighDensityInterconnection“PisaTower”封装基板简介2011-04HDISubstrateJiangNanHighDensityInterconnection需求与技术驱动产品发展趋向HDISubstrateJiangNanHighDensityInterconnectionPCB与基板发展历程需求与技术驱动HDISubstrateJiangNanHighDensityInterconnectionICpackagearea/SiChip(Die)area1.2MicroBGA,uBGACSP-ChipScalePackage/ChipSizePackageTechnologyDrivers需求与技术驱动HDISubstrateJiangNanHighDensityInterconnection电性能热性能外形因子组装技术限制--Shorterinterconnectionpath--Negligibleinterconnectinductance--MoreI/O＝＞MoreHeat--Moregate＝＞MoreHeat--Increasegatedensity＝＞MoreHeat--HeatsinkcandirectlyattachtothedieonafullarrayFCBGA--Wirebondpitchhasbecomebottleneckforfurtherdieshrink--AllowsmallerpackagethanWBBGAwithgivendiesize--ThinnerpackageispossibleFlipChipBGAVs.WireBondingBGA成本因子--Shorterprocessessetting--Highproductivityandtimesaving--LowermaterialcostTechnologyDrivers需求与技术驱动HDISubstrateJiangNanHighDensityInterconnectionFCBGAPackagingProcessHDISubstrateJiangNanHighDensityInterconnection绝缘层捕捉盘铜柱目标盘PisaTower封装基板铜柱作为两层间的互连HDISubstrateJiangNanHighDensityInterconnectionPisaTower封装基板典型积层4+4+4封装基板【Note】积层:每面的L1-4层.HDISubstrateJiangNanHighDensityInterconnectionPisaTower封装基板技术能力SubstratebodysizeX尺寸15.0to45.0+/-0.1mm局部线路宽度0.02mm(min)SubstratebodysizeY尺寸15.0to45.0+/-0.1mm局部线路间距0.02mm(min)Solderballpad节距1.27mm,1.00mm,0.80mm铜柱直径0.065mm(min)Ballpad尺寸0.50+/0.015mm(min)铜柱捕捉盘直径0.115mm(min)Ballpad阻焊开口0.35+/-0.010mm(min)Core外层上的线路宽度0.075mm(min)Bump节距0.150mm(min)Core外层上的线路间距0.075mm(min)Bump尺寸0.130mm(min)Core内层上的线路宽度0.05mm(min)SMdefinedbump开口0.1+/-0.01mmCore内层上的线路间距0.05mm(min)BumpannularringforSMdefinedbumpopening0.015mm(min)阻抗控制10%积层线路宽度0.025mm(min)Core上机械孔直径0.200+/-0.025mm(min)积层线路间距0.025mm(min)Core上机械孔环宽0.10mm(min)HDISubstrateJiangNanHighDensityInterconnectionPisaTower封装基板材料规格导体表面处理ENIG,OSPMax.金厚0.1um积层铜厚0.015+0.005/-0.005mmCore外层铜厚0.025+/-0.005mmCore内层铜厚0.0175+/-0.005mm机械孔孔壁铜厚0.02mm(min)积层绝缘层材料ABF，ProprietaryHighTgResin积层绝缘层厚度0.035~0.050+/-0.005mmCore材料PI,BT,HighTgEpoxySolderMask材料TaiyoPSR4000TaiyoHighTgResinABFHDISubstrateJiangNanHighDensityInterconnection测试项目测试条件判定依据结果ThermalStressTest(SolderDip)288℃/10sec10CyclesMicro-sectionPassTemperatureCyclingTest(AirtoAir)-55℃～125℃2000CyclesE-testPassAirReflow(Max.Temp.260℃)/10CyclesE-testPassSolderDip10Cycles可靠性测试结果样品信息:铜柱数量:1600000线宽/间距:0.035mm/0.035mm积层结构:4+10+4积层绝缘层厚度:0.04mmPisaTower封装基板HDISubstrateJiangNanHighDensityInterconnection应用BumpPad(um)150BumpPitch(AreaArray-um)176LineWidth/Space(um)25/25LineTolerance(+/-um)4SolderMaskWindow(um)90SMWindowSizeTolerance(+/-um)10SolderMaskRegistration(um)20Copperpillar(um)65MicroViaLand(um)100ThroughHole(Mechanicalum)150ThroughHoleLand(um)2502+2+2FC封装基板HDISubstrateJiangNanHighDensityInterconnection应用BumpPad(um)130BumpPitch(AreaArray-um)150LineWidth/Space(um)25/25LineTolerance(+/-um)4SolderMaskWindow(um)100SMWindowSizeTolerance(+/-um)10SolderMaskRegistration(um)20Copperpillar(um)50MicroViaLand(um)100BuriedHole(Mechanicalum)200BuriedHoleLand(um)5004+2+4And6+4+6FC封装基板HDISubstrateJiangNanHighDensityInterconnection应用FeatureParameterSubstrateCoreBuild-upLineThickness(μm)--20±4Min.Line/Space(μm)--35/35CopperPillarHeight(μm)--75～80Min.Diameter(μm)--65DielectricTypeBT&PolyimideABF,EpoxyDielectricConstant3.8～4.23.2～3.4Thickness(μm)110±535±5or55±5ImpendanceControl(Ω)50±3.550±3.5OverallThickness(mm)1.500.504+10+4MCM-L基板HDISubstrateJiangNanHighDensityInterconnectionThankYou！