呼吸机专用mos管-AP5N20DY--5A-200V-TO-252-TO-251

AP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司1PackageMarkingandOrderingInformationProductIDPackMarkingQty(PCS)AP5N20DTO-252-3LAP5N20DXXXYYYY2500AP5N20YTO-251-3LAP5N20YXXXYYYY4000AbsoluteMaximumRatingsTC=25ºC,unlessotherwisenotedParameterSymbolValueUnitDrain-SourceVoltage(VGS=0V)VDSS200VContinuousDrainCurrentID5APulsedDrainCurrentIDM20AGate-SourceVoltageVGSS±20VSinglePulseAvalancheEnergyEAS45mJAvalancheCurrentIAR3ARepetitiveAvalancheEnergyEAR3.2mJPowerDissipation(TC=25ºC)PD46WThermalResistance,Junction-to-CaseRthJC2.7ºC/WThermalResistance,Junction-to-AmbientRthJA60OperatingJunctionandStorageTemperatureRangeTJ,Tstg-55~+150ºCDescriptionTheAP5N20D/YissiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.GeneralFeaturesVDS=200V,ID=5ARDS(ON)0.58Ω@VGS=10VApplicationUninterruptiblePowerSupply(UPS)PowerFactorCorrection(PFC)AP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司2ElectricalCharacteristicsatTj=25℃unlessotherwisespecifiedParameterSymbolTestConditionsMin.Typ.Max.UnitDrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250µA200----VZeroGateVoltageDrainCurrentIDSSVDS=200V,VGS=0V,TJ=25ºC----5μAVDS=160V,VGS=0V,TJ=125ºC----100Gate-SourceLeakageIGSSVGS=±20V----±100nAGate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250µA1.21.52.5VDrain-SourceOn-Resistance(Note3)RDS(on)VGS=10V,ID=2.5A--0.420.58ΩInputCapacitanceCissVGS=0V,VDS=25V,f=1.0MHz--228--pFOutputCapacitanceCoss--48--ReverseTransferCapacitanceCrss--17--TotalGateChargeQgVDD=160V,ID=5.0A,VGS=10V--18--nCGate-SourceChargeQgs--1.5--Gate-DrainChargeQgd--9.5--Turn-onDelayTimetd(on)VDD=100V,ID=5.0A,RG=25Ω--10--nsTurn-onRiseTimetr--19--Turn-offDelayTimetd(off)--43--Turn-offFallTimetf--32--ContinuousBodyDiodeCurrentISTC=25ºC----5APulsedDiodeForwardCurrentISM----20BodyDiodeVoltageVSDTJ=25ºC,ISD=5A,VGS=0V----1.4VReverseRecoveryTimetrrVGS=0V,IS=5A,diF/dt=100A/μs--160--nsReverseRecoveryChargeQrr--1.5--μCNotes1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature2.IAS=3A,VDD=50V,RG=25Ω,StartingTJ=25ºC3.PulseTest:Pulsewidth≤300μs,DutyCycle≤1%AP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司3012345678910051015200.90.9511.051.11.15-50050100150VGS=0VID=250uA00.511.522.53-50050100150VGS=10VID=2.5ARDS(on),On-Resistance(Normalized)BVDSS(Normalized)ID,DrainCurrent(A)ID,DrainCurrent(A)ID,DrainCurrent(A)TC,CaseTemperature(A)TJ,JunctionTemperature(ºC)VGS,Gate-to-SourceVoltage(V)TJ,JunctionTemperature(ºC)0123456789100246810TJ=150ºCTJ=25ºCVDS,Drain-to-SourceVoltage(V)VSD,Source-to-DrainVoltage(V)IS,SourceCurrent(A)0.20.40.60.811.21.410210010-1101TJ=150ºCTJ=25ºC20V10V7V6V5.5V5V01234560306090120150Figure1.OutputCharacteristics(TJ=25ºC)Figure2.BodyDiodeForwardVoltageFigure3.DrainCurrentvs.TemperatureFigure4.BVDSSVariationvs.TemperatureFigure5.TransferCharacteristicsFigure6.On-Resistancevs.TemperatureTypicalCharacteristicsAP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司4012345678910051015200204060VGS=0Vf=1MHzCissCossCrssFigure7.CapacitanceFigure8.GateChargeVDS,Drain-to-SourceVoltage(V)Qg,TotalGateCharge(nC)Capacitance(pF)VGS,Gate-to-SourceVoltage(V)104102101100103VDD=40VVDD=160VVDD=100V10110010-110-210-310-610-510-410-310-210-110-7Tp,PulseWidth(s)Figure10.TransientThermalImpedanceZthJC,ThermalImpedance(K/W)D=0.5D=0.2D=0.1D=0.05D=0.02D=0.01SinglePulseAP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司5FigureA：GateChargeTestCircuitandWaveformFigureB：ResistiveSwitchingTestCircuitandWaveformFigureC：UnclampedInductiveSwitchingTestCircuitandWaveformAP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司6PackageMechanicalDataDimensionsMillimetersInchesRef.Min.Typ.Max.Min.Typ.Max.AA2BCDEGHLV1V22.1000.660.402.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.474.670.1760.1841.091.210.0430.0487°1.351.650°6°7°B25.185.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFB2EHBGLC2DETAILADETAILAACV1V1V2A2DV1E1D1L2TO-252ReelSpectification-TO-252WEFD0P0P2P1D1Tt1B0K0A05°AAAABBBBDimensionsMillimetersInchesRef.Min.Typ.Max.Min.Typ.Max.WEFD0D1P0P1P2A0B0K0Tt115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.401.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.904.106.900.27110P00.1540.1618.100.3110.3191.902.100.0750.0830.100.00440.001.5752.780.109Φ329Φ132016.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.682.880.2700.2760.1050.11339.8040.201.5671.583AP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司7AP5N20DIY200VN-ChannelEnhancementModeMOSFETAP5N20D/YRev1.0臺灣永源微電子科技有限公司8Attention1,AnyandallAPMMicroelectronicsproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlev