SiGeHBT的发展及其在微波_射频通讯中的应用

:2006205210;:2006207208SiGeHBT/1,1,2,1(1.,100084;2.;,400060):,SiGeHBT/,,CMOS,/SiGeHBT,SiGeSOC:SiGe;SiGeHBT;SiGeBiCMOS;/:TN322+.8:A:100423365(2006)0520552207TheDevelopmentofSiGeHBTTechnologyandItsApplicationsinMicrowave/RFCommunicationSystemsZHOUWei1,LIUDao2guang1,2,YANLi2ren1(1.InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,P.R.China;NationalLaboratoryofAnalogIntegratedCircuits;SichuanInstituteofSolid2StateCircuits,Chongqing400060,P.R.China)Abstract:SiGeHBTtechnologyhasbeenwidelyusedinmicrowave/RFcommunicationafter20yearsofad2vancement.Itsrapiddevelopmentbenefitsfromimprovedepitaxialtechnology,fullcompatibilitywithsiliconprocess,especiallywithexistingCMOSprocess,andhugedemandsfrommicrowave/RFcommunicationmarkets.TheevolutionofSiGeHBTtechnologyisbrieflyreviewed.ItisbelievedthattheSiGeHBTtechnologywillserveasatechnologyplatformforSOCofmixed2signalcommunicationsysteminthenearfuture.Keywords:SiGeepitaxy;SiGeHBT;SiGeBiCMOS;Microwave/RFcommunicationEEACC:2560J12050,SiGeSi,,Si,SiGe,SiGe4%,SiGe1960,,SiSi[1],1983,SiGe1987,IBMSiGeHBT[2]MBE,SiGeGe12%,100nm,45meV,,SiGeHBT6,:1),12%Ge90meV(10%Ge75meV);2)Gummel,,Gummel1989,SiGeHBT[3,4],SiGeHBT1994,SiGeIBM200mm365200610MicroelectronicsVol136,5Oct12006[5]2090,SiGeHBT,,fT,375GHz[6]IBMSiGeHBTECL,CMOS,SiGeHBTSiBJT,Si,,SiGeBiCMOSSiBiCMOSIBMJazzPhillipTEMICSiGeBiCMOS,SiGeBiCMOS25SiGeHBTSiGeBiCMOS,SOISiGeHBTSiGeBiCMOS[8],,,SemicoResearch,SiGe,SiBJT,SiGeHBT,Semico,SiGe:,SiGe:WLANGPS,SiGe,SiGeHBT2SiGe,SiGeHBTSiBJT,,,51018cm-3,:;;,2080,1000,,,1100,SiGe[9],HF,,Si2HSi2H13HF1100,HF,,:1);2),SiO2SiGe,,1[10]SiGeGe,,,SiGe,,SiGe(),1[10]SiGe(MBE)(CVD)MBE,SiGeHBTMBE,MBE,,,,,5:SiGeHBT/553,CVD,,IBMMBESiGeHBT,(UHV/CVD)SiGeHBTSiGeUHV/CVD[10]LPCVD[11],RPCVD,300mm,50(200mm)SiGeHBT,SiGe/SiHBT,,BVceo,,,SiGeHBTfT;,SiGe,SiSiGe,SiO2(Si3N4)SiGe(2(a))SiGe,SiBJT;SiGeCMOS,SiGeHBT1991,SiGe[13],2000,SiGeHBT,,fT154GHz,fmax180GHz[14216],SiGe(2(b)),SiSiGe,,SiO2(Si3N4)SiGe,,,Si2H2Cl2HCl[12]2SiGe3SiGeHBTGeBGe,IBMGe,Daimler2Benz/TemicGeGe,GeSiGe3IBMSiGeHBTSIMS,4IBMSiGeHBT3IBMSiGeHBTSIMS[17]4IBMSiGeHBT[17]3,IBMGe,SiGe,BiCMOSSiGeGeIII2VHBTGe,20%,(11019,5),,SiBJT10Ge,,,554:SiGeHBT/2006,SiGeHBTIII2VSiGeHBT[18221]5Ge[18]SiGe,,2fT,fmax2Nf;GeSiGeHBT[10];BVceofT(6,Johnson);EarlyVAfT[22],6[22]VA,fTBVceoSiGeHBT,[22](1):FOMPA=PoutGPAEf2(1),Pout,G,PAE,f,FOBPAmWGHz28GHzSiGeHBT3.8105mWGHz2[24](1),SiGeHBTGaAsHBTInPHBT1SiGeHBT/GHzPout/dBm/dBPAE/%FOM/mWGHz2WE/m1.932.412.3677.61040.9[19]5.3524.713.6336.41040.5[23]12.621.67.4232.91041.4[20]18.024.73.7112.51042.0[21]8.027.712.2613.81053.0[24]SiGeHBT[25,26],,[9,27],SiGe4SiGe/SiGe/Si,SiGeHBT,,SiGeCMOSSiGeBi2CMOS/,RF,IF(IF)SiGe4.1SiGe/,,(LNA)SiGeSiGe,Ge,2GHz2mA,0.2dB,13dB[28]Chan,R.IBM7HPBiCMOSLNA,0.522GHz,5.5dB,15dB,0.7dB[29]4.2SiGeSiGe,,SiBiCMOS1995,DaimlerBenzUlmSiGeHBT26GHz40GHzVCO5:SiGeHBT/555,3GHz,10dB-13dBm46GHzVCO,lMHz-95dBc/HzHBTMBE1000cmSiGe,HBTfmax60GHz[30]2004,Ahmed,K.I.fT47GHzSiGeHBTVCO[31]2.7-3.3V,4.2GHz,13%,100kHz-106dBc/Hz,lMHz-128dBc/Hz3.3V26mW2005,Chen,Y2J.E.200GHzSiGeHBTKaVCO[32]1.62.5V,33GHz,lMHz-99dBc/Hz,0.547GHz/V,VCO183.7dBc4.3SiGe,1998,UlmTemicMMICSiGeHBT,:5.7GHz,11.2GHz[33]5.7GHz45mW;LO5.84GHz-2dBm;IF140MHz18.5dB;1dB+2dBm;LO26dB;IF140MHz5.7dB,IF380MHz3.6dB11.2GHz53mW;LO9.75GHz-2dBm;IF1250MHz16.1dB;LO47dB;IF1250MHz9.4dB2000,Ku[34]20GHz,32mW,LO37.5dBm,IF1GHz10dB,17dB2004,Meng0.35mSiGeBiCMOS5.2GHz,16dBGilbert[35]fT67GHzSiGeHBT,IFMOSLO3dBm,LO2IFLO2RFRF2IF-66dB-52dB-24dBLO-15dBm3dBm,13dB16dB5V,35.7mA,LO3dBm,IP1dB=-21dBm,IIP3=-11dBm4.4SiGe1997,Ryum,B.R.SiGeHBT(fT/fmax=52/32GHz,BVceo=3.5V,AE=1m4m)10Gbit/s5.5V,14mA;9GHz3dB,45dB;0.595mm0.495mm[35]1993,Schreiber,H.U.SiGeHBT(fT=40GHz),16Gbit/s215V,300mW[36]1999,SiGeHBT(fT/fmax=53/31GHz,BVceo=3.0V,AE=1.5m15m)30Gbit/s-5V,1.1W4.5SiGe1995,ErbenCSiGeHBT[38]SiGeHBT,CECBQ5.7GHz,CECB1dB18dBm20dBm(PAE)30%VCE=4V1mW/m21996,PotyrajSSiGeHBT[39],SiGeHBT,590mm,0.91mm2,55s,1%7%,40V,RF060W,RF230W2000,IBM40%SiGeHBT[40]PCSCDMA,1.88GHz3.4V30dBm,(ACPR)-46dB,23dB2002,Raghavan(LTCC)2.4GHzSiGe556:SiGeHBT/2006HBT[41]27.5dBm,47%,35dB,23-44dBc-49dBc2005,Cheung120GHz0.2mSiGeHBT2126GHz[42],19dB,15dB22GHz23dBm,PAE19.75%;24GHz21dBm,PAE13%,SiGeHBT(MMIC)SiGeBiCMOS,,5SiGe:1)SiGe;2)SiGe;3)SiGe,;4)Si,,MMIC;5)SiGeBiCMOS,SiGe,14,SiGeBiCMOS,SiGeHBT,,CMOS,20,,SiGeSOC:[1]NguyenT,HarameDL,StorkJMC,etal.DiodesfabricatedfromUHV/CVD[A].TechDigIntElecDevMeeting[C].LosAngeles,CA,USA.1986.304.[2]IyerSS,PattonGL,DelageSL,etal.Silicon2ger2maniumbaseheterojunctionbipolartransistorsbymo2lecularbeamepitaxy[A].TechDigIntElecDevMeeting[C].WashingtonDC,USA.1987.8742876.[3]KingCA,HoytJL,GronetCM,etal.Si/Si1-z/Gexheterojunctionbipolartransistorsproducedbylim2itedreactionprocessing[J].IEEEElecDevLett,1989,10(2):52254.[4]PattonGL,HarameDL,StorkJMC,etal.Gra2ded2SiGe2base,poly2emitterheterojunctionbipolartransistors[J].IEEEElecDevLett,1989,10(12):5342536.[5]HarameDL,SchonenbergK,GilbertM,etal.A200mmSiGe2HBTtechnologyforwirelessandmixedsig2nalapplications[A].TechDigIntElecDevMeeting[C].SanFrancisco,CA,USA.1994.4372440.[6]RiehJ,JagannathanB,GreenbergDR,etal.SiGeheterojunct