2SD669三极管

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDTO-126CPlastic-EncapsulateTransistors2SD6692SD669ATRANSISTOR(NPN)FEATURESLowFrequencyPowerAmplifierComplementaryPairwith2SB649/AMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=1mA,IE=0180VCollector-emitterbreakdownvoltageV(BR)CEOIC=10mA,IB=02DS6692SD669A120160VEmitter-basebreakdownvoltageV(BR)EBOIE=1mA,IC=05VCollectorcut-offcurrentICBOVCB=160V,IE=010µAEmittercut-offcurrentIEBOVEB=4V,IC=010µAhFE(1)VCE=5V,IC=150mA2SD6692SD669A6060320200DCcurrentgainhFE(2)VCE=5V,IC=500mA30Collector-emittersaturationvoltageVCE(sat)IC=500mA,IB=50mA1VBase-emittervoltageVBEVCE=5V,IC=150mA1.5VTransitionfrequencyfTVCE=5V,IC=150mA140MHzCollectoroutputcapacitanceCobVCB=10V,IE=0,f=1MHz14pFCLASSIFICATIONOFhFE(1)RankBCDRange2SD66960-120100-200160-3202SD669A60-120100-200SymbolParameterValueUnitVCBOCollector-BaseVoltage180VVCEOCollector-EmitterVoltage2SD6692SD669A120160VVEBOEmitter-BaseVoltage5VICCollectorCurrent-Continuous1.5APCCollectorDissipation1WTJJunctionTemperature150℃TstgStorageTemperature-55-150℃TO-126C1.EMITTER2.COLLECTOR3.BASEB,Aug,2012【南京南山半导体有限公司—长电三极管选型资料】Min.Max.Min.Max.A3.0003.4000.1180.134A11.8002.2000.0710.087b0.6600.8600.0260.034b11.1701.3700.0460.054c0.4500.6000.0180.024D7.8008.2000.3070.323E10.80011.2000.4250.441ee14.4604.6600.1760.183L15.30015.7000.6020.618L11.3001.5000.0510.059P4.0404.2400.1590.167Φ12.7002.9000.1060.114Φ23.1003.3000.1220.130SymbolDimensionsInMillimetersDimensionsInInches2.280TYP.0.090TYP.【南京南山半导体有限公司—长电三极管选型资料】【南京南山半导体有限公司—长电三极管选型资料】InnerBox:240mm×165mm×mmLabelontheInnerBoxOuterBox:525mm×360mm×262mmLabelontheOuterBoxQALabelSealtheboxwiththetapeStamp“EMPTY”ontheemptybox【南京南山半导体有限公司—长电三极管选型资料】