东南大学电子器件样卷

共1页第1页东南大学考试卷（卷）课程名称电子器件考试学期得分适用专业电子科学与技术考试形式开卷考试时间长度120分钟I（total20points）Explainthefollowingconceptassimplyaspossible.1.×××effectsofMOSFET2.×××3.×××transistor4.×××voltage5.×××ofBJTII（Total40points）Answerthefollowingquestions.1.Howtocontrol×××?2.Explainthe×××effects.3.Whatisthe×××effectinBJT?4.Whatarethedifferencesbetween×××and×××?5.Explainthe×××of×××.III(Total25points)AstandardMOSFETisfabricatedwithms=,Qi=,d=,gateareaA=,andNA=.AssumeT=300K.Calculate:(1)The×××voltage;(2)The×××voltage;(3)Judge×××ofthisMOSFET;(4)At×××,theMOSFETexhibitsadraincurrentofID=.Using×××inthetextbook,determinethedraincurrentif×××.III(Total10points)Foran×××MOSFETwithNA=andQi=,itsthresholdvoltageisabout×××forgateoxideof×××.Whatistherequired×××toincreaseVTto×××?Assumethat×××.Someconstants:k=1.3810-23J/K=8.6210-5eV/K;q=1.610-19C;0=8.8510-14F/cm=8.8510-12F/m;TherelativedielectricconstantofSiO2is3.9;TheintrinsicconcentrationforSiatroomtemperatureisni=1.51010cm-3.)学号姓名密封线