1AM贴片三极管丝印参数

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-23Plastic-EncapsulateTransistorsMMBT3904TRANSISTOR(NPN)FEATURESzComplementarytoMMBT3906MARKING:1AMMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=10µA,IE=060VCollector-emitterbreakdownvoltageV(BR)CEOIC=1mA,IB=040VEmitter-basebreakdownvoltageV(BR)EBOIE=10µA,IC=06VCollectorcut-offcurrentICEXVCE=30V,VEB(off)=3V50nACollectorcut-offcurrentICBOVCB=60V,IE=0100nAEmittercut-offcurrentIEBOVEB=5V,IC=0100nAhFE(1)VCE=1V,IC=10mA100300hFE(2)VCE=1V,IC=50mA60DCcurrentgainhFE(3)VCE=1V,IC=100mA30Collector-emittersaturationvoltageVCE(sat)IC=50mA,IB=5mA0.3VBase-emittersaturationvoltageVBE(sat)IC=50mA,IB=5mA0.95VTransitionfrequencyfTVCE=20V,IC=10mA,f=100MHz300MHzDelaytimetdVCC=3V,VBE(off)=-0.5VIC=10mA,IB1=1mA35nsRisetimetrVCC=3V,VBE(off)=-0.5VIC=10mA,IB1=1mA35nsStoragetimetsVCC=3V,IC=10mA,IB1=IB2=1mA200nsFalltimetfVCC=3V,IC=10mA,IB1=IB2=1mA50nsCLASSIFICATIONOFhFE(1)HFE100-300RANKLHRANGE100–200200–300SymbolParameterValueUnitVCBOCollector-BaseVoltage60VVCEOCollector-EmitterVoltage40VVEBOEmitter-BaseVoltage6VICCollectorCurrent200mAPCCollectorPowerDissipation200mWRΘJAThermalResistanceFromJunctionToAmbient625℃/WTjJunctionTemperature150℃TstgStorageTemperature-55～+150℃TOPROperatingTemperature0～+70℃SOT–231.BASE2.EMITTER3.COLLECTORC,Oct,2012【南京南山半导体有限公司—长电贴片三极管选型资料】0.11101000100200300400110100101000.1110911010020030002550751001251500501001502002500.20.40.60.81.01.20.11101001101000.00.40.81.2048121620020406080100fT——IChFE——COMMONEMITTERVCE=1V3300.3Ta=100℃Ta=25℃DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)IC30300303COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(mV)COLLECTORCURRENTIC(mA)β=10Ta=25℃Ta=100℃ICVCEsat——6002001330.320CobCibREVERSEVOLTAGEV(V)f=1MHzIE=0/IC=0Ta=25℃VCB/VEBCob/Cib——CAPACITANCEC(pF)33060VCE=20VTa=25℃TRANSITIONFREQUENCYfT(MHz)COLLECTORCURRENTIC(mA)MMBT3904TypicalCharacterisiticsCOLLECTORPOWERDISSIPATIONPC(mW)AMBIENTTEMPERATURETa()℃PC——TaVBEIC——3030.3Ta=25℃Ta=100℃COMMONEMITTERVCE=1VCOLLECTORCURRENTIC(mA)BASE-EMMITERVOLTAGEVBE(V)303β=10BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)COLLECTORCURRENTIC(mA)Ta=25℃Ta=100℃300ICVBEsat——StaticCharacteristicCOLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)500uA450uA400uA350uA300uA250uA200uA150uA100uAIB=50uACOMMONEMITTERTa=25℃C,Oct,2012Min.Max.Min.Max.A0.9001.1500.0350.045A10.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500.0030.006D2.8003.0000.1100.118E1.2001.4000.0470.055E12.2502.5500.0890.100ee11.8002.0000.0710.079LL10.3000.5000.0120.020θ0°8°0°8°0.550REF.0.022REF.SymbolDimensionsInInchesDimensionsInMillimeters0.950TYP.0.037TYP.【南京南山半导体有限公司—长电三极管选型资料】ThebottomgasketThetopgasket3000×1PCS3000×15PCSLabelontheReelLabelontheInnerBoxLabelontheOuterBoxQALabelSealtheboxwiththetapeSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxInnerBox:210mm×208mm×203mmOuterBox:440mm×440mm×230mm