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IRF510ABVDSS=100VRDS(on)=0.4ΩID=5.6A1005.6420±20635.63.36.5330.22-55to+1753004.51--62.5--0.5--nAvalancheRuggedTechnologynRuggedGateOxideTechnologynLowerInputCapacitancenImprovedGateChargenExtendedSafeOperatingArean175°COperatingTemperaturenLowerLeakageCurrent:10μA(Max.)@VDS=100VnLowerRDS(ON):0.289Ω(Typ.)AdvancedPowerMOSFETThermalResistanceJunction-to-CaseCase-to-SinkJunction-to-AmbientRθJCRθCSRθJA°C/WCharacteristicMax.UnitsSymbolTyp.FEATURESAbsoluteMaximumRatingsDrain-to-SourceVoltageContinuousDrainCurrent(TC=25℃)ContinuousDrainCurrent(TC=100℃)DrainCurrent-Pulsed(1)Gate-to-SourceVoltageSinglePulsedAvalancheEnergy(2)AvalancheCurrent(1)RepetitiveAvalancheEnergy(1)PeakDiodeRecoverydv/dt(2)TotalPowerDissipation(TC=25℃)LinearDeratingFactorOperatingJunctionandStorageTemperatureRangeMaximumLeadTemp.forSolderingPurposes,1/8?fromcasefor5-secondsCharacteristicValueUnitsSymbolIDMVGSEASIAREARdv/dtIDPDTJ,TSTGTLAVmJAmJV/nsWW/°CA°CVDSSVTO-2201.Gate2.Drain3.Source321Rev.B1IRF510A100--2.0----------0.11----------5521101428188.51.64.1----4.0100-100101000.4--24065253040705012----3.49190------850.235.6201.5----Notes;(1)RepetitiveRating:PulseWidthLimitedbyMaximumJunctionTemperature(2)L=3mH,IAS=5.6A,VDD=25V,RG=27Ω,StartingTJ=25°C(3)ISD≤5.6A,di/dt≤250A/μs,VDD≤BVDSS,StartingTJ=25°C(4)PulseTest:PulseWidth=250µs,DutyCycle≤2%(5)EssentiallyIndependentofOperatingTemperatureN-CHANNELPOWERMOSFETElectricalCharacteristics(TC=25°Cunlessotherwisespecified)Drain-SourceBreakdownVoltageBreakdownVoltageTemp.Coeff.GateThresholdVoltageGate-SourceLeakage,ForwardGate-SourceLeakage,ReverseCharacteristicSymbolMax.UnitsTyp.Min.TestConditionStaticDrain-SourceOn-StateResistanceForwardTransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitanceTurn-OnDelayTimeRiseTimeTurn-OffDelayTimeFallTimeTotalGateChargeGate-SourceChargeGate-Drain(“Miller”)ChargegfsCissCossCrsstd(on)trtd(off)tfQgQgsQgdBVDSSΔBV/ΔTJVGS(th)RDS(on)IGSSIDSSVV/°CVnAμAΩSpFnsnC--------------------------VGS=0V,ID=250µAID=250µASeeFig7VDS=5V,ID=250µAVGS=20VVGS=-20VVDS=100VVDS=80V,TC=150°CVGS=10V,ID=2.8A(4)VDS=40V,ID=2.8A(4)VDD=50V,ID=5.6A,RG=24ΩSeeFig13(4)(5)VDS=80V,VGS=10V,ID=5.6ASeeFig6&Fig12(4)(5)Drain-to-SourceLeakageCurrentVGS=0V,VDS=25V,f=1MHzSeeFig5Source-DrainDiodeRatingsandCharacteristicsContinuousSourceCurrentPulsed-SourceCurrent(1)DiodeForwardVoltage(4)ReverseRecoveryTimeReverseRecoveryChargeISISMVSDtrrQrrCharacteristicSymbolMax.UnitsTyp.Min.TestCondition----------AVnsµCIntegralreversepn-diodeintheMOSFETTJ=25°C,IS=5.6A,VGS=0VTJ=25°C,IF=5.6AdiF/dt=100A/µs(4)IRF510A10-110010110-1100101@Notes:1.250µsPulseTest2.TC=25oCVGSTop:15V10V8.0V7.0V6.0V5.5V5.0VBottom:4.5VID,DrainCurrent[A]VDS,Drain-SourceVoltage[V]24681010-110010125oC175oC-55oC@Notes:1.VGS=0V2.VDS=40V3.250µsPulseTestID,DrainCurrent[A]VGS,Gate-SourceVoltage[V]051015200.00.20.40.60.8@Note:TJ=25oCVGS=20VVGS=10VRDS(on),[Ω]Drain-SourceOn-ResistanceID,DrainCurrent[A]0.40.60.81.01.21.41.61.82.010-1100101175oC25oC@Notes:1.VGS=0V2.250µsPulseTestIDR,ReverseDrainCurrent[A]VSD,Source-DrainVoltage[V]100101070140210280350Ciss=Cgs+Cgd(Cds=shorted)Coss=Cds+CgdCrss=Cgd@Notes:1.VGS=0V2.f=1MHzCrssCossCissCapacitance[pF]VDS,Drain-SourceVoltage[V]02468100510VDS=80VVDS=50VVDS=20V@Notes:ID=5.6AVGS,Gate-SourceVoltage[V]QG,TotalGateCharge[nC]N-CHANNELPOWERMOSFETFig1.OutputCharacteristicsFig2.TransferCharacteristicsFig6.GateChargevs.Gate-SourceVoltageFig5.Capacitancevs.Drain-SourceVoltageFig4.Source-DrainDiodeForwardVoltageFig3.On-Resistancevs.DrainCurrentIRF510A-75-50-2502550751001251501752000.80.91.01.11.2@Notes:1.VGS=0V2.ID=250µABVDSS,(Normalized)Drain-SourceBreakdownVoltageTJ,JunctionTemperature[oC]-75-50-2502550751001251501752000.00.51.01.52.02.53.0@Notes:1.VGS=10V2.ID=2.8ARDS(on),(Normalized)Drain-SourceOn-ResistanceTJ,JunctionTemperature[oC]10010110210-1100101102DC100µs1ms10ms@Notes:1.TC=25oC2.TJ=175oC3.SinglePulseOperationinThisAreaisLimitedbyRDS(on)ID,DrainCurrent[A]VDS,Drain-SourceVoltage[V]10-510-410-310-210-110010110-1100singlepulse0.20.10.010.020.05D=0.5@Notes:1.ZθJC(t)=4.51oC/WMax.2.DutyFactor,D=t1/t23.TJM-TC=PDM*ZθJC(t)ZθJC(t),ThermalResponset1,SquareWavePulseDuration[sec]2550751001251501750123456ID,DrainCurrent[A]Tc,CaseTemperature[oC]N-CHANNELPOWERMOSFETFig7.BreakdownVoltagevs.TemperatureFig8.On-Resistancevs.TemperatureFig11.ThermalResponseFig10.Max.DrainCurrentvs.CaseTemperatureFig9.Max.SafeOperatingAreaPDMt1t2IRF510AN-CHANNELPOWERMOSFETFig12.GateChargeTestCircuit&WaveformFig13.ResistiveSwitchingTestCircuit&WaveformsFig14.UnclampedInductiveSwitchingTestCircuit&WaveformsEAS=LLIAS2----21--------------------BVDSS--VDDBVDSSVinVout10%90%td(on)trtontofftd(off)tfChargeVGS10VQgQgsQgdVarytptoobtainrequiredpeakID10VVDDCLLVDSIDRGtpDUTBVDSStpVDDIASVDS(t)ID(t)TimeVDD(0.5ratedVDS)10VVoutVinRLDUTRG3mAVGSCurrentSampling(IG)ResistorCurrentSampling(ID)ResistorDUTVDS300nF50KΩ200nF12VSameTypeasDUT*CurrentRegulator”R1R2IRF510AN-CHANNELPOWERMOSFETFig15.PeakDiodeRecoverydv/dtTestCircuit&WaveformsDUTVDS+--LISDriverVGSRGSameTypeasDUTVGS•dv/dtcontrolle