死区时间的三个要素及无死区控制

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死区时间的三个要素及无死区控制TheThreeEssentialFactorsofDeadtimeandControlwithoutDeadtime(北京100084):,,Abstract:Thispaperproposesthethreeessentialfactorsofdeadtime,examinesthepossibilityofcontrollingseveraltypicalVSIbridgeconverterswithoutdeadtimesetupandpresentsthesimulationandexperimentalresultsofathreephasehighPFrectifierwithoutdeadtime.:/Keywords:sinusoidalwave;powerfactor;deadtime;controlwithoutdeadtime1,[1~5]:SSI,,;,CPU,;,,:,,,,,2GTR,IGBTMOSFET,1bpbn(MOSFETIGBT)(GTR)1(td),,,,,,,,()(),td,,,:(1);(2);(3),,,3,,,,?,3.1DCACDC2DCACDC2DCACDCDCACDC,ip,,40199931999.6,3.2(PFC)(HPF)HPF(3),3PF(HPF),()HPFiaia0,Vap,iaVDapVan,Vap;Vap,iaVDapVan,Vap,;Vap,;iaia0,iaVapVan,ia,Van,VDap,Uoua,Laia;Van,VDap,Uoua,ia;Van,ia,ia,ia,,VapVan,,,,,HPF,,3.3,,(),,,,,4,,,3.2,(),,,,4HPF3,:La=Lb=Lc=3mH,40F,30.25(10kW)302.5(1kW),Udc=550V,40kHz,1s,Saber4.3,55BB,(41),,bpbnub,,ib0,bp,Vbp;ib0,bn,Vbn,,16(10kW),A21.43A,(THD)2.297%,549.9V,3.2894V,0.6%,6B7t=45ms,10kW1kW,Uo700V,27.3%,3ms;A0.5ms,t=65ms,1kW10kW,Uo390V,-29%,5ms;A3ms,26A,(21.43A)4.57A,7B5HPF3,:La=Lb=Lc=2.36mH,40F,100,380V,10kHz,BSM35GB120DN28,8AA(:+15V,:-5V)A,A-5V,8AA9A()A,,1;,9AA10,580V,ACDC,EMI;40F,;10(::A)6,ACDCDCAC,42199931999.6,DCACDC,,1,THD,,;,;,,,1,THD,1.IGBT.,1997,31(4):7~9.2,,.SPWM.,1996,30(2):1~4.3..,1995(4):2~5.4.PWM.,1997(3):21~24.5,,.PWM.,1998(2):43~47.收稿日期:19980924定稿日期:19981123杨德刚:男,1963年8月生,博士生专业为电路与系统,研究方向为三相功率因数校正软开关技术(上接第17页)0(),BUiPI,,;0(),CUiPI,,,,(),(),[3];(),,,,(),4,L1=L2=3.2mH(30A,cos=0.8),t=0.5s5%,,6,61,.,,,1993.2.,,,1995.3.SPWM,,1995,29(1):7~11.4..,,1993:5~11.收稿日期:19981111定稿日期:19990111刘小四:男,1975年生,硕士研究生主要研究方向为电力电子技术43

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