有机场效应晶体管材料及器件研究进展-刘承斌

*刘承斌　　范曲立　　黄　维†　　王　迅(　　200433)　　　(organicfield-effecttransistor,OFET),.、.　　,,Recentadvanceinorganicfield-effecttransistors:materials,devices,andprocessesLIUCheng-Bin　　FANQu-Li　　HUANGWei†　　WANGXun(InstituteofAdvancedMaterials,FudanUniversity,Shanghai　200433,China)Abstract　　Organicfield-effecttransistor(OFET)asanewgenerationoftransistorshasbeenimportantlyconsideredduetohispotentialapplicationsandbreakthroughoftechnologiesinthefieldofmicroelectronicsandinformation.Theshiftedfocusinresearchisfromnovelchemicalstructurestofabricationtechnologies.ProgressinthegrowingfieldofOFETsisbeingdiscussedindetai.lKeywords　　OFET,organicsemiconductors,fabricationtechnologies*　(:2003034285)、(:2F5B)†　.Email:[e-mail]　　(organicfield-effecttran-sistor,OFET):、、、.,、、、、、.OFET(1):.:p-,n-.OFET:VGSIDS,,,IDS,“”;,IDS,“”.“”“”Ion/Ioff/,μOFET,.1986OFET[1],OFET,.,/;;OFET、、.OFET、、.424　34(2005)61　OFET　(a);(b)1　有机半导体材料OFET:(LUMO)(HOMO)[2,3];,[4];、,,[5];,,/.11986—2004p-OFET.21990—2004n-OFET.1　1986—2004p-OFET()*μ(cm2V-1s-1)Ion/Ioff1986Polythiophene(s)10-5103[1]1992Pentacene(v)2×10-3—[22]1995α-sexthiophene(v)0.03106[23]1996Phthalocyanine(v)0.022×105[24]1997Pentacene(v)1.5108[25]1998PPV(s)0.2—[11]1998Poly(3-hexylthiophen)(s)0.1106[16]1998α-ω-dihexyl-quaterthiophene(v)0.23—[15]1999α-ω-dihexyl-quinquethiophene(s)0.1—[8]2000Singlecrystallinepentacene3.2108[18]2001DH-FTTF(v)0.11—[26]2002Pentacene(s)0.89107[21]2003Singlecrystallinerubrene8.0—[27]2004EtB12T6(s)0.05105[14]2004Singlecrystallinepentacene35—[19]　　　　　*　s,v1.1　p-1.1.1　高聚物、[6—8].,π,[9].,,.3-,[10];PPVOFETμh0.2cm2/(Vs)[11].1.1.2　低聚物p-OFET,OFET[1].,4252　1990—2004n-OFET()*μ(cm2V-1s-1)Ion/Ioff1990Pc2Lu(v)2×10-4—[28]1994TCNQ(v)3×10-5450[38]1995C60(v)0.08106[39]1996C60(v)0.122[40]1996NTCDA(v)0.003103[41]1998F16CuPc(v)0.035×104[42]1998PPV(s)0.5—[10]2000DFH-6T(v)0.02105[32]2000NTCDI-C8F(v)0.06105[43]2000PTCDI-C18H(v)0.2—[44]2000Pentacene(v)2.4108[35]2001Singlecrystallineperylene5.5108[36]2001BBL(s)0.06—[29]2002PTCDI-C8H(v)0.6105[45]2002BBL(s)5×10-4150[46]2003DFH-4T(v)0.048105[47]2003DCMT(v)0.2106[48]2003Perfluoroarene-polythiophenen(s)0.08—[33]2003BBL(s)0.15×105[30]2003PCBM(s)4.5×10-3—[49]2004Polyfluorene(s)2.2×10-8—[31]2004Perfluoropentacene(v)0.11105[50]　　　　*　s,v[12,13];[14].μh0.23cm2/(Vs)[15],μh0.1cm2/(Vs),Ion/Ioff106[16],.1.1.3　有机小分子:,,;,;,,;,.,,.[17,18]:、、π.[19—21](),,,.Afzali[21]OFETμh0.89cm2/(Vs),Ion/Ioff107,OFET.1.2　n-1990n-OFET[28],n-,(),;n-(),(—CN、—NO2—FLUMO,,n-),426　34(2005)6.n-p-n、CMOS.pnCMOS,.1.2.1　高聚物n-,PPV,μe0.5cm2/(Vs)[11];BBL,AlCl3GaCl3,μe0.06cm2/(Vs)[29],SiO2μe0.1cm2/(Vs),Ion/Ioff105[30];n-,μe10-8cm2/(Vs)[31].1.2.2　低聚物Friend[32]DFH-6Tn-OFET,,μe0.02cm2/(Vs),Ion/Ioff105;Marks[33],μe0.08cm2/(Vs).,.,n-.LUMO(-4eV)-n-[34].1.2.3　有机小分子n-(MPc)、、(NTC-DI).n-OFET,/.2000,OFETμe2.4cm2/(Vs),Ion/Ioff108[35];Perylene[36]OFETμe5.5cm2/(Vs),、.,[37]OFETμe10-1cm2/(Vs),Ion/Ioff105.2　绝缘体材料OFETSiO2,Al2O3,TiO2,ZrO2.、、,、、2　p-3　n-、..OFET:;、、,;,,427;、,OFET.OFET:(PI)[51]、(PMMA)[52]、(BCB)[53]、(PVP)[54]、(PS)[55]、(PVA)[56]、(PTFE)[57]、(SR)[58].PI(200℃),,PI,,;BCB,,pOFET,nOFET;PVPOFET-,PVP;PTFE,;PVA;PM-MA,.,SR,,、,,,,.,,[59].3　OFET的制备OFET,,π,,.3.1　3.1.1　真空镀膜.“”“”,,OFET[60];“”,.;,.、、、,.,,.3.1.2　溶液成膜OFET.、、、LB、、、.,..LB,、,.LB-OFET[61]3-.[62]3-LB-OFET.LB-OFET,,,.,.,.,OFET(—SH、—SAc、—NC)[63,64][65,66].[64]1—2nm、OFET..,...,.,:,.428　34(2005)6/,.OFET[67,68].OFET、..[69][70],.,.,.,;.3.1.3　单晶OFET,,.,,;,,[71,72].,,,..[73],、、,、.OF-ET[18,19]、[36][27],OFET35cm2/(Vs),.,.3.2　OFETOFET,,.(),,、、,.:、、、.3.2.1　丝网印刷,,,75μm.[74],[75],,[76].,、,.75—100μm,10μm.,,,.3.2.2　喷墨打印,OFET,[77].,.OFET5μm.:[78];;[79];.,,.3.2.3　毛细管微加工法,,.,1μm[80—82].,,,.3.2.4　微接触打印法,:,,,、[83—85].429,().0.1μmOFET[86—88].3.2.5　印章法、、、TFT.,,.,.0.1μm[89,90].Sirringhaus[91,92]“”5μm.4　OFET的应用4.1　(、),.Drury[93]326p-OFET,、2-.[94]864OFETCMOS,n-,p-α-6,,2448,7.5μm10kHz,.,,pn.、p-nOFET.4.2　、OFET.,,、.,.[95][96]OFET.OFET[97].OFET[98].4.3　OFET[99—102].OF-ET,.,-.OFET,.,、、、,[103,104].4.4　[105],.Fabry-Perot,,120μeV1μeV,.OFET,.,,.4.5　OFET,,,.,[106].5　总结和未来的发展趋势OFET:(1987—1993),;(1993—1997),、、;(1997—),、、OF-ET.OFET:,430　34(2005)6/Si,.,n-.、、、、,OFET.OFET,、,OFET.,OFET、().[1]TsumuraA,KoezukaH,AndoT.App.lPhys.Let.t,1986,49:1210[2]HillI,RajagopalA,KahnAetal.App.lPhys.Let.t,1998,73:662[3]ShimadaT,HamaguchiK,KomaAetal.App.lPhys.Let.t,1998,72:1869[4]LaquindanumJ,KatzH,LovingerA.J.Am.Chem.Soc.,1998,120:664[5]SchonJ,KlocC,LauudiseRAetal.App.lPhys.Let.t,1998,73:3574[6]TesslerN,RoichmanY.App.lPhys.Let.t,2001,79:2987[7]AssadiA,SvenssonC,WillanderMetal.App.lPhys.Let.t,1988,53:195[8]BaoZ,DodabalapurA,LovingerA.App.lPhys.Let.t,1996,69:4108[9TorsiL,TaneseM,CioffiNetal.J.Phys.Chem.B,2003,107:7589[10]BaoZ,DodalapurA,LovingerA.App.lPhys.Let.t,1996,69:4108[11]HoofmanR,HaasM,SiebbelesLetal.Nature,1998,392:54[12]HorowitzG.J.Mater.Chem.,1999,9:2021[13]vanMullekomH,VekemansJ,HavingaEetal.Mater.Sc.iEng.Rep.,2001,32:1[14]MurphyA,FrechetJ,ChangPetal.J.Am.Chem.Soc.,2004,126:1596[15]KatzHE,LovingerA,LaquindanumJ.Chem.Mater.,1998,10:457[16]SirringhousH,TwsslerN,FriendR.Science,1998,280:1741[17]KatzH,BaoZ.J.Phys.Chem