车载IGBT器件封装装片工艺中空洞的失效研究

-23-1022009-09-23IGBT1312231.2100962.2260193.226006IGBTTO-220IGBTIGBTTO-220IGBTTO-220FEAIGBTIGBT10%28.6TO-220IGBTIGBT2%5%IGBTTN305.94A1681-1070201002-0023-05FailureAnalysisofVoidsinAutomotiveIGBTDieAttachProcessSHIJian-gen13,SUNWei-feng1,JINGWei-ping2,SUNHai-yan2,GAOGuo-hua31.SoutheastUniversity,Nanjing210096,China;2.JiangsuProvinceKeyLab,NantongUniversity,Nantong226019,China;3.NantongFujitsuMicroelectronicsCo.,Ltd.,Nantong226006,ChinaAbstract:DieattachprocessforIGBTTO-220packagestylewilleasilyinducevoidsinthesolderlayer.ThermalimpedanceandperformancethatdeterminethereliabilityofIGBTdevicewillbeinfluencedbyvoidpercentageinthesolderlayer.Thecausesofthevoidsinthedieattachprocessarepresentedinthispaper.ThecorrelationbetweenvoidpercentageandthermalimpedancewasfoundthroughathermalimpendencemodelthroughFEAmethod.Thesimulationresultsshowedthatwhenthevoidsincreaseinthesolderlayer,thethermalimpedancewillbesharplyincreasedbutthethermalscatterperformanceofIGBTwereweakenedandIGBTtemperaturewith10%singlevoidsolderlayerwasincreasedby28.6,comparedthatwithnovoidinsolderlayer.Meanwhile,invirtueofthefailureanalysisofengineeringsamplesandstudyoftheinfluenceofthevoidsafterpowercycleontheIGBTdeviceofTO220package,thecriteriaofvoidpercentageindieattachprocess,i.e.theindividualvoidvolume2%andtotalvoids5%wasfinallysettled.Keywords:IGBT;dieattach;void;thermalimpedance;failureanalysis102Vol10No2ELECTRONICS&PACKAGING8220102-24-1021IGBTIGBT[1]IGBTIGBTIGBT[2]IGBTIGBTTO-220IGBT[3]IGBTIGBTIGBT-40165IGBTIGBTTO-220TO-220IGBTIGBT2IGBTTO-2201IGBT[4]IGBT1IGBTTO-2202TO-2202IGBTIGBTCTE1IGBTTO-220IGBT-25-1021CTE3IGBTIGBTJESD51[5]IGBTTO-22011TJTAPIGBTTO-220C=CTV22CCTV1IGBTTO-220FEA34IGBT5W25100msIGBTPCB2%100ms3100ms89.2200ms73.433IGBTFEAFEATO220IGBTEMCIGBT64.2IGBTIGBT-26-102410%28.64IGBT4IGBTIGBT4IGBTIGBTIGBTIGBTTO-220IGBTIGBTIGBTIGBTIGBT2CTEFEAIGBT55.42%61.45%IGBT5.42%IGBT7b1.45%7a255.42%FEACTEIGBTIGBTIGBT-27-10261.45%72%5%5FEAIGBTTO-220IGBTTO-220IGBT5.42%2%5%IGBT1ThomasTheobald,etal.AnIgnitionIGBTwithSmartFunc-tionsinChiponChipTechnology[J].Proceedingsof2001InternationalSymposiumonPowerSemiconductorDevices&ICs,Osaka.2JackWojslawowicz,etal.IGBT[J].20059.3CharlesA.Harper.ElectronicMaterialsandProcessesHandbook[M].McGraw-HillCompanies,Inc.,2004:219-300.4ESECCorporation.SoftSolderDieAttachTutorial[M].ESEC,2001.5IntergratedCircuitsThermalTestMethodEnvironmentConditions-NaturalConvectionStillAir[S].EIA/JEDECstandar-JESD51-2.1977-IGBT