小米移动电源用的MOS管2418E封装sot23-6

SSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page1of7:Description:AbsolutemaxRating:SymbolParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V①6AIDMPulsedDrainCurrent②30PD@TC=25°CPowerDissipation③1.3WVDSDrain-SourceVoltage20VVGSGate-to-SourceVoltage±12VTJTSTGOperatingJunctionandStorageTemperatureRange-55to+150°CThermalResistanceSymbolCharacterizesTyp.Max.UnitsRθJAJunction-to-ambient(t≤10s)④—95℃/WVDSS20VRDS(on)18mohm(typ.)ID6ASOT23-6MarkingandpinAssignmentSchematicdiagramAdvancedtrenchMOSFETprocesstechnologySpecialdesignedforPWM,loadswitchingandgeneralpurposeapplicationsUltralowon-resistancewithlowgatechargeFastswitchingandreversebodyrecovery150℃operatingtemperatureItutilizesthelatesttrenchprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.ThesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawidevarietyofotherapplicationsSSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page2of7@TA=25℃unlessotherwisespecifiedSymbolParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-Sourcebreakdownvoltage20——VVGS=0V,ID=250μARDS(on)StaticDrain-to-Sourceon-resistance—1821mΩVGS=4.5V,ID=6A—1922VGS=4V,ID=5.5A—2126VGS=3.1V,ID=5A—2530VGS=2.5V,ID=4AVGS(th)Gatethresholdvoltage0.5—1VVDS=VGS,ID=250μAIDSSDrain-to-Sourceleakagecurrent——1μAVDS=20V,VGS=0VIGSSGate-to-Sourceforwardleakage——10μAVGS=10V-10——VGS=-10VgFSForwardTransconductance—7—SVDS=5V,ID=6AQgTotalgatecharge—8—nCVDS=10V,ID=6A,VGS=4.5VQgsGate-to-Sourcecharge—1.5—QgdGate-to-Drain(Miller)charge—2—td(on)Turn-ondelaytime—20—nsVDD=10V,ID=1AVGS=4.5V,RGEN=10ΩtrRisetime—50—td(off)Turn-Offdelaytime—64—tfFalltime—40—CissInputcapacitance—650—pFVGS=0VVDS=10Vƒ=1.0MHzCossOutputcapacitance—170—CrssReversetransfercapacitance—150—Source-DrainRatingsandCharacteristicsSymbolParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrent(BodyDiode)——6AMOSFETsymbolshowingtheintegralreversep-njunctiondiode.ISMPulsedSourceCurrent(BodyDiode)——30AVSDDiodeForwardVoltage—0.761.1VIS=1A,VGS=0VSSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page3of7©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page4of7①Themaximumcurrentratingislimitedbybond-wires.②Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.③ThepowerdissipationPDisbasedonmax.junctiontemperature,usingjunction-to-casethermalresistance.④ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C⑤Thesecurvesarebasedonthejunction-to-casethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureofTJ(MAX)=150°C.⑥Themaximumcurrentratingislimitedbybond-wires.r(t),NormalizedEffectiveTransientThermalImpedanceFigure1NormalizedMaximumTransientThermalImpedanceSquareWavePluseDuration(sec)SSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page5of7：SymbolDimensionInMillimetersDimensionInInchesMinMaxMinMaxA1.0501.2500.0410.049A10.0000.1000.0000.004A21.0501.1500.0410.045b0.3000.5000.0120.020c0.1000.2000.0040.008D2.8203.0200.1110.119E1.5001.7000.0590.067E12.6502.9500.1040.116e0.95(BSC)0.037(BSC)e11.8002.0000.0710.079L0.3000.6000.0120.024θ00800080SSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page6of7(Available)SOT23-6OperatingTemperatureRangeC:-55to150ºCDevicesperUnitPackageTypeUnits/TapeTapes/InnerBoxUnits/InnerBoxInnerBoxes/CartonBoxUnits/CartonBoxSOT23-6300010300004120000ReliabilityTestProgramTestItemConditionsDurationSampleSizeHighTemperatureReverseBias(HTRB)Tj=125℃to150℃@80%ofMaxVDSS/VCES/VR168hours500hours1000hours3lotsx77devicesHighTemperatureGateBias(HTGB)Tj=150℃@100%ofMaxVGSS168hours500hours1000hours3lotsx77devicesSSF2418E©SilikronSemiconductorCO.,LTD.2011.05.25Version:1.3page7of7■AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.ConsultwithyourSilikronrepresentativenearestyoubeforeusinganySilikronproductsdescribedorcontainedhereininsuchapplications.■Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallSilikronproductsdescribedorcontainedherein.■SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguarante