AP2323AGN-HF规格书

AdvancedPowerP-CHANNELENHANCEMENTMODEElectronicsCorp.POWERMOSFET▼Capableof1.8VGateDriveBVDSS-20V▼SmallPackageOutlineRDS(ON)38mΩ▼SurfaceMountDeviceID-5A▼RoHSCompliant&Halogen-FreeDescriptionAbsoluteMaximumRatingsSymbolUnitsVDSVVGSVID@TA=25℃AID@TA=70℃AIDMAPD@TA=25℃WTSTG℃TJ℃SymbolValueUnitRthj-ambMaximumThermalResistance,Junction-ambient390℃/WDataandspecificationssubjecttochangewithoutnotice2011101411AP2323GN-HFRating-20+8-5Halogen-FreeProductContinuousDrainCurrent3,VGS@4.5V-4PulsedDrainCurrent1-20ThermalDataParameterTotalPowerDissipationOperatingJunctionTemperatureRangeStorageTemperatureRangeParameterDrain-SourceVoltageGate-SourceVoltageContinuousDrainCurrent3,VGS@4.5V-55to1501.38-55to150AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness.TheSOT-23packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.GDSDGSSOT-23AP2323GN-HFElectricalCharacteristics@Tj=25oC(unlessotherwisespecified)SymbolParameterTestConditionsMin.Typ.Max.UnitsBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=-250uA-20--VRDS(ON)StaticDrain-SourceOn-Resistance2VGS=-4.5V,ID=-4A--38mΩVGS=-2.5V,ID=-3A--50mΩVGS=-1.8V,ID=-1A--64mΩVGS(th)GateThresholdVoltageVDS=VGS,ID=-250uA-0.3--1VgfsForwardTransconductanceVDS=-5V,ID=-4A-15-SIDSSDrain-SourceLeakageCurrentVDS=-16V,VGS=0V---10uAIGSSGate-SourceLeakageVGS=+8V,VDS=0V--+100nAQgTotalGateChargeID=-4A-14.523.2nCQgsGate-SourceChargeVDS=-10V-2-nCQgdGate-Drain(Miller)ChargeVGS=-4.5V-4-nCtd(on)Turn-onDelayTimeVDS=-10V-10-nstrRiseTimeID=-1A-15-nstd(off)Turn-offDelayTimeRG=3.3Ω-40-nstfFallTimeVGS=-5V-22-nsCissInputCapacitanceVGS=0V-13202100pFCossOutputCapacitanceVDS=-10V-170-pFCrssReverseTransferCapacitancef=1.0MHz-145-pFRgGateResistancef=1.0MHz-612ΩSource-DrainDiodeSymbolParameterTestConditionsMin.Typ.Max.UnitsVSDForwardOnVoltage2IS=-1.2A,VGS=0V---1.2VtrrReverseRecoveryTimeIS=-4A,VGS=0V,-19-nsQrrReverseRecoveryChargedI/dt=100A/µs-11-nCNotes:1.PulsewidthlimitedbyMax.junctiontemperature.2.Pulsetest3.Surfacemountedon1in2copperpadofFR4board;270℃/Wwhenmountedonmin.copperpad.THISPRODUCTISSENSITIVETOELECTROSTATICDISCHARGE,PLEASEHANDLEWITHCAUTION.USEOFTHISPRODUCTASACRITICALCOMPONENTINLIFESUPPORTOROTHERSIMILARSYSTEMSISNOTAUTHORIZED.APECDOESNOTASSUMEANYLIABILITYARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTORCIRCUITDESCRIBEDHEREIN;NEITHERDOESITCONVEYANYLICENSEUNDERITSPATENTRIGHTS,NORTHERIGHTSOFOTHERS.APECRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANYPRODUCTSHEREINTOIMPROVERELIABILITY,FUNCTIONORDESIGN.2AP2323GN-HF65mΩFig1.TypicalOutputCharacteristicsFig2.TypicalOutputCharacteristicsFig3.On-Resistancev.s.GateVoltageFig4.NormalizedOn-Resistancev.s.JunctionTemperature2.01E+08Fig5.ForwardCharacteristicofFig6.GateThresholdVoltagev.s.ReverseDiodeJunctionTemperature30.60.811.21.41.6-50050100150Tj,JunctionTemperature(oC)NormalizedRDS(ON)ID=-4AVGS=-4.5V048121602468-VDS,Drain-to-SourceVoltage(V)-ID,DrainCurrent(A)TA=25oC-5.0V-4.5V-3.5V-2.5VVG=-1.8V048121601234-VDS,Drain-to-SourceVoltage(V)-ID,DrainCurrent(A)-5.0V-4.5V-3.5V-2.5VVG=-1.8VTA=150oC0246800.20.40.60.811.21.4-VSD,Source-to-DrainVoltage(V)-IS(A)Tj=25oCTj=150oC00.40.81.21.62-50050100150Tj,JunctionTemperature(oC)Normalized-VGS(th)(V)203040506070012345-VGS,Gate-to-SourceVoltage(V)RDS(ON)(Ω)ID=-1ATA=25oCID=-250uAAP2323GN-HF65mΩFig7.GateChargeCharacteristicsFig8.TypicalCapacitanceCharacteristicsFig9.MaximumSafeOperatingAreaFig10.EffectiveTransientThermalImpedanceFig11.TransferCharacteristicsFig12.MaximumContinuousDrainCurrentv.s.AmbientTemperature40123456048121620QG,TotalGateCharge(nC)-VGS,GatetoSourceVoltage(V)ID=-4AVDS=-10V0.010.11101000.010.1110100-VDS,Drain-to-SourceVoltage(V)-ID(A)TA=25oCSinglePulse100us1ms10ms100ms1sDC0.0010.010.110.00010.0010.010.11101001000t,PulseWidth(s)NormalizedThermalResponse(Rthja)0.2DUTY=0.5SinglePulsePDMDutyfactor=t/TPeakTj=PDMxRthja+TatTRthja=270℃/W040080012001600200015913172125-VDS,Drain-to-SourceVoltage(V)C(pF)f=1.0MHzCissCossCrssOperationinthisarealimitedbyRDS(ON)04812162001234-VGS,Gate-to-SourceVoltage(V)-ID,DrainCurrent(A)Tj=150oCTj=25oCVDS=-5V0123456255075100125150TA,AmbientTemperature(oC)-ID,DrainCurrent(A)Tj=-40oC0.10.050.020.01