半导体外延层晶格失配度的计算-何菊生

:2005-09-20:(1966-),,;*:　(1961-),,,,[e-mail].　　:1006-0464(2006)01-0063-05何菊生,张　萌*,肖祁陵(南昌大学材料科学与工程学院,江西南昌　330047)　:,。,XRD。,,,。,。:;;;:O484.1;TN304.2　　　　:A　　(),,。,,,。。,,。,GaN16%[1],14%[2],15%[3]。,,,。1　。as,ae,δ,1　δ1=as-aeae[4]2　δ2=as-aeas[5]3　δ3=2|as-ae|as+ae[6]1,。2,。3,,,,。,。GaN,16%,13.8%,15%。12,。,、、,,,。,|δ|5%,|δ|=5%～25%,|δ|25%[7]。2　2.1　、(β)(α)。1/4,C5/8C。,,,。(111)(0001)(0002),,,(100),,1。,。a,30120062　　　　　　南昌大学学报(理科版)JournalofNanchangUniversity(NaturalScience)Vo.l30No.1Feb.2006　1　2,3a,3a,23a。,a、2a/2、2a,3。2　3　2.2　,()(),()。(111),。,,,,。,。:①。:(0001)hex∥(0001)hex(),(100)fcc∥(100)fcc();:(0001)hex∥(111)fcc();:,,。②。25%,,〈1120〉∥〈1120〉,〈100〉∥〈100〉,〈1120〉∥〈110〉。,30°()45°(),〈1120〉∥〈1100〉,〈100〉∥〈110〉,,。③。,;,。,。,GaN,a,3a,2a,3.185,5.517,6.370;,2a/2,a,2a,3.21,4.54,6.42。1:(),。GaN。,,[12]。,(111)Si(111)GaAsGaN1　GaN(:10-10m)/δ1δ2GaN/Al2O3(0001)GaN∥(0001)Al2O35.517/4.758〈1100〉GaN∥〈1120〉Al2O316%[1]14%[2]GaN/ZnO(0001)GaN∥(0001)ZnO3.185/3.252〈112〉GaN∥〈112〉ZnO2.1%[8]2.1%GaN/6HSiC(0001)GaN∥(0001)SiC3.185/3.080〈1120〉GaN∥〈1120〉ZnO3.4%[9]3.3%GaN/Si(0001)GaN∥(111)Si3.185/3.839〈1120〉GaN∥〈110〉Si17%[10]21%GaN/Si(100)GaN∥(100)Si4.54/5.43〈100〉GaN∥〈100〉Si17%20%GaN/GaAs(100)GaN∥(100)GaAs4.54/5.653〈100〉GaN∥〈100〉GaAs20%[11]25%64()2006　,(001)Si(001)GaAsGaN,c-GaN。,。,,δ1δ2。1δ2-1δ1=1。δ1、δ2(δ2-δ1)(|δ2|-|δ1|)。δ2-δ1|δ2|-|δ1|δ1。δ15%,δ1、δ2;δ110%,1%;δ115%,3%,5%。,δ1。42.3　,,,,[13]GaAs(100)GaN,[14]β-FeSi2,[15][16]Si(100)ZnO,。ZnO/Si(100)β-FeSi2/Si。2.3.1　ZnO,ZnO/Si(100)ZnO,。(0001)ZnO∥(100)Si。ZnO3.252〈1120〉,5.632(3.2523)〈1010〉,Si5.430〈100〉(ZnO)5.632,30°,〈1010〉ZnO∥〈100〉Si,δ1=5.430-5.6325.632=-3.6%。,〈1210〉ZnO∥〈010〉Si,ZnO3,5.632(3.2523),9.756(5.6323)。:9.756/10.860,δ′1=10.860-9.7569.756=11%。ZnOSi(111),(0001)〈1010〉ZnO∥(111)〈110〉Si,18%,ZnOSi(100)Si(111)。2.3.2　β-FeSi2,a=0.9879nm,b=0.7799nm,c=0.7939nm,Siβ-FeSi2XRDSi(111)β-Fe-Si2(220)(202)[14],(220)β-FeSi2∥(111)Si,(202)β-FeSi2∥(111)Si。①(220)β-FeSi2∥(111)Si,(220)β-FeSi2()0.7839nm,0.98792+0.77992=1.259(nm),Si0.5432=0.7678(nm),0.76783(nm),1.330nm,0.7839/0.7678,1.259/1.330,(220)〈001〉β-FeSi2∥(111)〈110〉Si,δ1a=0.54302-0.78390.7839=-2.1%,(220)〈110〉β-FeSi2∥(111)〈112〉Si,δ′1a=0.54306-0.98792+0.779920.98792+0.77992=5.7%②,(202)〈010〉β-FeSi2∥Si(111)〈101〉Si,δ1b=-1.6%,,(202)〈101〉β-FeSi2∥Si(111)〈112〉Si,δ1b=5.5%,β-FeSi2Si(111),,。GaN。LiAlO2,a=5.170,c=6.260;LiGaO2,a=5.402,b=6.651　　　　　:372,c=5.007,10-10m。,1.7321.155(2/3/),。β-FeSi21.274,LiA-lO2LiGaO21.2111.180。,:①1.7321.155;②。2.3.3　RR(0112),2　GaN/δ1GaN/LiAlO2//(0001)〈1120〉GaN∥(100)〈001〉LiAlO2(0001)〈1100〉GaN∥(100)〈010〉LiAlO26.37/6.265.516/5.171.7%6.8%GaN/LiGaO2//(0001)〈1120〉GaN∥(001)〈010〉LiGaO2(0001)〈1100〉GaN∥(001)〈100〉LiGaO26.370/6.3725.516/5.4020.03%2.1%。,,C(0001)GaN[17]。GaN(0001),(0001)GaN∥(0112)Al2O3,R〈2110〉,4.785,GaN3.1853,〈1010〉,,〈1010〉GaN∥〈2110〉Al2O3,δ1=13.3%。,〈1210〉GaN∥〈0111〉Al2O3,(3.185×5)/15.384,δ′1=3.4%。,C。3　3.1　2θ,X2θ。(),2θ。a1a2,d1d2,2d1sinθ1=λ,2d2sinθ2=λ,,δ=a1-a2a2=d1-d2d2=sinθ2-sinθ1sinθ1,θ1、θ2,θ1-θ2=Δθ,δ=sinθ2-sinθ1sinθ1≈-Δθctgθ1。,53C-SiCSi,3C-SiCSi,。3C-SiC5(200)、Si(400)2θ=41.5°2θ=69.2°,2d12sinθ1=λ,2d24sinθ2=λ,d1d23C-SiC(100)、Si(100)。δ=a1-a2a2=d1-d2d2≈20%。。25%,,。3.2　2θ、Υ,,XRD。[19],GaN。(a)(0001)GaN∥(0001)Al2O3,30°,〈1010〉GaN∥〈2110〉Al2O3,,δ1=3.1853-4.7853.1853=13.7%。(b)(1012)GaN,7.571×10-10m,3.185×10-10m。(1012)GaN∥(0001)Al2O3,〈1210〉GaN∥〈0110〉Al2O3,66()2006　(3.185×3)/(4.7853),δ1=3.185×3-4.78533.185×3=13.3%;〈1011〉GaN∥〈2110〉Al2O3,((1012)GaN)/(4.785×2),,δ′1=(3.1853)2+5.1852-4.785×2(3.1853)2+5.1852=-26.4%,,()6　GaN/Al2O3(0001)。,,,。,,。4　,。,。,、、。,,ZnO/Al2O3,〈1120〉ZnO∥〈1010〉Al2O3,〈1120〉ZnO∥〈1120〉Al2O330°[20];,cGaN/GaAs,45°,20%13%,25%11%,,。,。、、,。,,,。,。10%,1%,0.1%。、,GaN、ZnO。:[1]　LeeYK,HanSW,LeeSS,eta.lTheGrowthofβ-Li-GaO2FilmsUsingNovelSinglePrecursors.JournalofCrystalGrowth,2001(226):481-487.[2]　LeeJJ,ParkYS,YangCS,eta.lMBEGrowthofWurtz-iteGaNonLaAlO3(100)Substrate.JournalofCrystalGrowth,2000(213):33-39.[3]　,　,　,.GaN[J].,2002,23(10):1093.[4]　,.[M].:,2003.,262,122,341.[5]　　.[M].:,1995:2,566.[6]　,..[J],2001,30(3):171.[7]　,,.[M].:.2004:415.[8]　,,,.ZnO/Si[J].,2005,19(2):109.[9]　LuJ,HaworthL,WestwoodDI,eta.lInitialStagesofMo-lecular-beamEpitaxyGrowthofGaNon6H-SiC(0001).ApplPhysLett,2001,78(8):1080.[10]　Seong-Hwanjiang,Seung-JaeLee,Iu-SeokSeo,eta.lCharacteristicsofGaN/Si(111)EpitaxyGrownUsingAl0.1Ga0.9N/AlNCompositeNucleationLayersHavingDifferentThicknessesofAlN.JournalofCrystalGrowth241(2002):289-296.[11]　,,　,.GaN/GaAs.[J],1999,120(1):58.[12]　　,,..:,2002:588.[13]　,,　.GaAs(100)GaN[J].,2001,3,22(3):315.(下转第102页)671　　　　　:[10]　,.DPS[M].:,2002:626-627.ApplicationGreySystemTheorytoForecastingandAnalysisonAffectecFactorsofAtmosphericNO2Concentration———TakeChangchenDistrictFoshanCityasExampleXUSong,CHENGTong-qing(DepartmentofResourceandEnvironment,FoshanUniversity,Foshan528000,China)Abstract:Usingthegraysystemtheorymethod,itisidentifiedbycorrelationanlysisthatthesuperiorfactorsaffect-ingtheatmosphericNO2concentrationofCheanchendistrictareformthedensityofmotorvehicleandtheamountofmotorvehicle.AndwiththeGrayModelGM(1,1),theatmosphericNO2concentrationinfuturefiveyearsarede-scending.thepapermakescien