K9F2G08U0B

FLASHMEMORY1K9F2G08U0BK9F2G08B0BPreliminarySamsungConfidentialK9F2G08X0B*SamsungElectronicsreservestherighttochangeproductsorspecificationwithoutnotice.INFORMATIONINTHISDOCUMENTISPROVIDEDINRELATIONTOSAMSUNGPRODUCTS,ANDISSUBJECTTOCHANGEWITHOUTNOTICE.NOTHINGINTHISDOCUMENTSHALLBECONSTRUEDASGRANTINGANYLICENSE,EXPRESSORIMPLIED,BYESTOPPELOROTHERWISE,TOANYINTELLECTUALPROPERTYRIGHTSINSAMSUNGPRODUCTSORTECHNOLOGY.ALLINFORMATIONINTHISDOCUMENTISPROVIDEDONASASISBASISWITHOUTGUARANTEEORWARRANTYOFANYKIND.1.ForupdatesoradditionalinformationaboutSamsungproducts,contactyournearestSamsungoffice.2.Samsungproductsarenotintendedforuseinlifesupport,criticalcare,medical,safetyequipment,orsimilarapplicationswhereProductfailurecouldresultinlossoflifeorpersonalorphysicalharm,oranymilitaryordefenseapplication,oranygovernmentalprocurementtowhichspecialtermsorprovisionsmayapply.•VoltageSupply-2.7Vdevice(K9F2G08B0B):2.50V~2.90V-3.3Vdevice(K9F2G08U0B):2.70V~3.60V•Organization-MemoryCellArray:(256M+8M)x8bit-DataRegister:(2K+64)x8bit•AutomaticProgramandErase-PageProgram:(2K+64)Byte-BlockErase:(128K+4K)Byte•PageReadOperation-PageSize:(2K+64)Byte-RandomRead:25µs(Max.)-SerialAccess:25ns(Min.)256Mx8BitNANDFlashMemory•FastWriteCycleTime-PageProgramtime:200µs(Typ.)-BlockEraseTime:1.5ms(Typ.)•Command/Address/DataMultiplexedI/OPort•HardwareDataProtection-Program/EraseLockoutDuringPowerTransitions•ReliableCMOSFloating-GateTechnology-Endurance:100KProgram/EraseCycles(with1bit/512ByteECC)-DataRetention:10Years•CommandDrivenOperation•UniqueIDforCopyrightProtection•Package:-K9F2G08X0B-PCB0/PIB0:Pb-FREEPACKAGE48-PinTSOPI(12x20/0.5mmpitch)Offeredin256Mx8bit,theK9F2G08X0Bisa2G-bitNANDFlashMemorywithspare64M-bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical200µsonthe(2K+64)Bytepageandaneraseoperationcanbeperformedintypical1.5msona(128K+4K)Byteblock.Datainthedataregistercanbereadoutat25nscycletimeperByte.TheI/Opinsserveastheportsforaddressanddatainput/outputaswellascommandinput.Theon-chipwritecontrollerautomatesallprogramanderasefunctionsincludingpulserepetition,whererequired,andinternalverificationandmarginingofdata.Eventhewrite-intensivesystemscantakeadvantageoftheK9F2G08X0B′sextendedreliabilityof100Kprogram/erasecyclesbyprovidingECC(ErrorCorrectingCode)withrealtimemapping-outalgorithm.TheK9F2G08X0Bisanoptimumsolu-tionforlargenonvolatilestorageapplicationssuchassolidstatefilestorageandotherportableapplicationsrequiringnon-volatility.PRODUCTLISTPartNumberVccRangeOrganizationPKGTypeK9F2G08B0B-P2.5~2.9VX8TSOP1K9F2G08U0B-P2.7~3.6v(TSOP1)K9F2G08X0B-PCB0/PIB0PACKAGEDIMENSIONS48-PINLEAD/LEADFREEPLASTICTHINSMALLOUT-LINEPACKAGETYPE(I)48-TSOP1-1220FUnit:mm/Inch0.787±0.00820.00±0.20#1#240.20+0.07-0.030.008+0.003-0.0010.500.0197#48#250.48812.40MAX12.000.4720.100.004MAX0.250.010()0.039±0.0021.00±0.050.0020.05MIN0.0471.20MAX0.45~0.750.018~0.0300.724±0.00418.40±0.100~8°0.0100.25TYP0.125+0.0750.0350.005+0.003-0.0010.500.020()48-pinTSOP1StandardType12mmx20mm123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.CN.CN.CN.CN.CN.CR/BRECEN.CN.CVccVssN.CN.CCLEALEWEWPN.CN.CN.CN.CN.CN.CN.CN.CN.CI/O7I/O6I/O5I/O4N.CN.CN.CVccVssN.CN.CN.CI/O3I/O2I/O1I/O0N.CN.CN.CN.C~I/O7DATAINPUTS/OUTPUTSTheI/Opinsareusedtoinputcommand,addressanddata,andtooutputdataduringreadoperations.TheI/Opinsfloattohigh-zwhenthechipisdeselectedorwhentheoutputsaredisabled.CLECOMMANDLATCHENABLETheCLEinputcontrolstheactivatingpathforcommandssenttothecommandregister.Whenactivehigh,commandsarelatchedintothecommandregisterthroughtheI/OportsontherisingedgeoftheWEsignal.ALEADDRESSLATCHENABLETheALEinputcontrolstheactivatingpathforaddresstotheinternaladdressregisters.AddressesarelatchedontherisingedgeofWEwithALEhigh.CECHIPENABLETheCEinputisthedeviceselectioncontrol.WhenthedeviceisintheBusystate,CEhighisignored,andthedevicedoesnotreturntostandbymodeinprogramoreraseoperation.REREADENABLETheREinputistheserialdata-outcontrol,andwhenactivedrivesthedataontotheI/Obus.DataisvalidtREAafterthefalli