IS42S32400B-7TLI中文资料

IS42S32400BIntegratedSiliconSolution,Inc.——1-800-379-47741PRELIMINARYINFORMATION,Rev.00G06/15/06Copyright©2006IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytimewithoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.ISSI®FEATURES•Clockfrequency:166,143,125,100MHz�Fullysynchronous;allsignalsreferencedtoapositiveclockedge�Internalbankforhidingrowaccess/precharge�PowersupplyVDDVDDQIS42S32400B3.3V3.3V�LVTTLinterface�Programmableburstlength–(1,2,4,8,fullpage)�Programmableburstsequence:Sequential/Interleave�AutoRefresh(CBR)�SelfRefreshwithprogrammablerefreshperiods�4096refreshcyclesevery64ms�Randomcolumnaddresseveryclockcycle�ProgrammableCASlatency(2,3clocks)�Burstread/writeandburstread/singlewriteoperationscapability�Burstterminationbyburststopandprechargecommand�AvailableinIndustrialTemperature�Availablein86-pinTSOP-IIand90-ballFBGA�AvailableinLead-freeOVERVIEWISSI's128MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The128MbSDRAMisorganizedin1Megx32bitx4Banks.4Megx32128-MBITSYNCHRONOUSDRAMPRELIMINARYINFORMATIONJUNE2006KEYTIMINGPARAMETERSParameter-6-7UnitClkCycleTimeCASLatency=367nsCASLatency=2810nsClkFrequencyCASLatency=3166143MhzCASLatency=2125100MhzAccessTimefromClockCASLatency=35.45.4nsCASLatency=26.56.5nsISSI®2IntegratedSiliconSolution,Inc.——1-800-379-4774PRELIMINARYINFORMATIONRev.00G06/15/06IS42S32400BDEVICEOVERVIEWThe128MbSDRAMisahighspeedCMOS,dynamicrandom-accessmemorydesignedtooperatein3.3VVDDand3.3VVDDQmemorysystemscontaining134,217,728bits.Internallyconfiguredasaquad-bankDRAMwithasynchronousinterface.Each33,554,432-bitbankisorga-nizedas4,096rowsby256columnsby32bits.The128MbSDRAMincludesanAUTOREFRESHMODE,andapower-saving,power-downmode.Allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK.AllinputsandoutputsareLVTTLcompatible.The128MbSDRAMhastheabilitytosynchronouslyburstdataatahighdataratewithautomaticcolumn-addressgeneration,theabilitytointerleavebetweeninternalbankstohideprechargetimeandthecapabilitytorandomlychangecolumnaddressesoneachclockcycleduringburstaccess.Aself-timedrowprechargeinitiatedattheendoftheburstsequenceisavailablewiththeAUTOPRECHARGEfunc-tionenabled.Prechargeonebankwhileaccessingoneoftheotherthreebankswillhidetheprechargecyclesandprovideseamless,high-speed,random-accessoperation.SDRAMreadandwriteaccessesareburstorientedstartingataselectedlocationandcontinuingforaprogrammednum-beroflocationsinaprogrammedsequence.Theregistra-tionofanACTIVEcommandbeginsaccesses,followedbyaREADorWRITEcommand.TheACTIVEcommandinconjunctionwithaddressbitsregisteredareusedtoselectthebankandrowtobeaccessed(BA0,BA1selectthebank;A0-A11selecttherow).TheREADorWRITEcommandsinconjunctionwithaddressbitsregisteredareusedtoselectthestartingcolumnlocationfortheburstaccess.ProgrammableREADorWRITEburstlengthsconsistof1,2,4and8locationsorfullpage,withaburstterminateoption.CLKCKECSRASCASWEA9A8A7A6A5A4A3A2A1A0BA0BA1A10COMMANDDECODER&CLOCKGENERATORMODEREGISTERREFRESHCONTROLLERREFRESHCOUNTERSELFREFRESHCONTROLLERROWADDRESSLATCHMULTIPLEXERCOLUMNADDRESSLATCHBURSTCOUNTERCOLUMNADDRESSBUFFERCOLUMNDECODERDATAINBUFFERDATAOUTBUFFERDQM0-DQM3DQ0-31VDD/VDDQVss/VssQ121281212832323232256(x32)409640964096ROWDECODER4096MEMORYCELLARRAYBANK0SENSEAMPI/OGATEBANKCONTROLLOGICROWADDRESSBUFFERA114FUNCTIONALBLOCKDIAGRAM(FOR1MX32X4BANKS)IntegratedSiliconSolution,Inc.——1-800-379-47743PRELIMINARYINFORMATIONRev.00G06/15/06ISSI®IS42S32400BPINCONFIGURATIONS86pinTSOP-TypeIIforx32PINDESCRIPTIONSA0-A11RowAddressInputA0-A7ColumnAddressInputBA0,BA1BankSelectAddressDQ0toDQ31DataI/OCLKSystemClockInputCKEClockEnableCSChipSelectRASRowAddressStrobeCommandCASColumnAddressStrobeCommandVDDDQ0VDDQDQ1DQ2VSSQDQ3DQ4VDDQDQ5DQ6VSSQDQ7NCVDDDQM0WECASRASCSA11BA0BA1A10A0A1A2DQM2VDDNCDQ16VSSQDQ17DQ18VDDQDQ19DQ20VSSQDQ21DQ22VDDQDQ23VDD1234567891011121314151617181920212223242526272829303132333435363738394041424386858483828180797877767574737271706968676665646362616059585756555453525150494847464544VSSDQ15VSSQDQ14DQ13VDDQDQ12DQ11VSSQDQ10DQ9VDDQDQ8NCVSSDQM1NCNCCLKCKEA9A8A7A6A5A4A3DQM3VSSNCDQ31VDDQDQ30DQ29VSSQDQ28DQ27VDDQDQ26DQ25VSSQDQ24VSSWEWriteEnableDQM0-DQM3x32Input/OutputMaskVDDPowerVssGroundVDDQPowerSupplyforI/OPinVssQGroundforI/OPinNCNoConnectionISSI®4IntegratedSiliconSolution,Inc.——1-800-379-4774PRELIMINARYINFORMATIONRev.00G06/15/06IS42S32400BPINCONFIGURATIONPACKAGECODE:B90BALLFBGA(TopView)(8.00mmx13.00mmBody,0.8mmBallPitch)123456789ABCDEFGHJKLMNPRDQ26DQ28VSSQVSSQVDDQVSSA4A7CLKDQM1VDDQVSSQVSSQDQ11DQ13DQ24VDDQDQ27DQ29DQ31DQM3A5A8CKENCDQ8DQ10DQ12VDDQDQ15VSSVSSQDQ25DQ30NCA3A6NCA9NCVSSDQ9DQ14VSSQVSSVDDVDDQDQ22DQ17NCA2A10NCBA0CASVDDDQ6DQ1VDDQVDDDQ23VSSQDQ20DQ18DQ16DQM2A0BA