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基于数值模拟的LDMOS解析模型作者：吴秀龙学位授予单位：安徽大学参考文献(42条)1.参考文献2.VitezslayBenda.JohnGowarPowerSemiconductorDevicesTheoryandApplications19993.柯导明.陈军宁高温CMOS集成电路原理与实现20004.EArnoldSilicon-on-InsulatordevicesforhighvoltageandpowerICapplications19855.ANakagawaImpactofdielectricisolationtechnologyonpowerIcs19916.ANakagawa.NYasuharaProspectsofhighvoltagepowerIcsonthinSOI19927.ColingeJSilicon-On-InsulatorTechnology:MaterialstoVLSI19918.YSugawara.YInoueNewdielectricisolationforhighvoltagepowerIcsbysinglesiliconpolysilicondirectboding(SPSDB)technique19929.ANakagawa.YYamaguchi500VthreephaseinverterIcsbasedonanewdielectricisolationtechnique199210.EMcShaneKrishnaThedesign,characterizationandmodelingofRFLDMOSonSilicon-on-Insulatormaterial200211.SMerchant.EArnoldRealizationofhighbreakdownvoltage700VinthinSOIdevices199112.JGFiorenza.JesusAdelExperimentalcomparisonofRFpowerLDMOSFETsonthin-filmSOIandbulksilicon[外文期刊]200213.陆生礼.孙伟锋.谭悦.吴建辉.时龙兴PDP选址驱动芯片HV-CMOS器件的研究[期刊论文]-微电子学2002(1)14.吴建辉.孙伟锋.陆生礼PDP选址驱动芯片高压管设计[期刊论文]-东南大学学报(自然科学版)2003(2)15.KwokKNG.WilliamTLynchAnalysisofthegatevoltagedependentseriesresistanceofMOSFETs198616.PochaMDAcomputer-aideddesignmodelforhigh-voltagedoublediffusedMOS(DMOS)transistors197617.CleasenHR.ZeePiet.VenDerAnaccurateDCmodelforhigh-voltagelateralDMOStransistorssuitedforCAD198618.YSKim.JGFossumPhysicalDMOSTmodelingforhigh-voltageICCAD[外文期刊]199019.CWTang.KYTongAcompactlargesignalmodelofLDMOS200220.VishnuKhemka.VijayP.RonghuaZhuDetectionandOptimizationofTemperatureDistributionAcrossLarge-AreaPowerMOSFETstoImproveEnergyCapability[外文期刊]200421.TMAMEDICIuser'smanual,Version2003-12200322.陈星弼功率MOSFET与高压集成电路199023.刘恩科.朱秉升.罗晋生半导体物理200124.kLKasleyAmodelforthelateraljunctioncontourofdoublediffusedGaussianprofiles1984(09)25.曾树荣半导体器件物理基础200226.富力文.阎力大RESURF原理应用于SOILDMOS晶体管[期刊论文]-半导体学报1996(4)27.LuoJ.CaoG.EkkanathSAhighperformanceRFLDMOSFETinthinfilmSOItechnologywithstepdriftprofile2003(11)28.Hyoung-WooKim.Yearn-ikChoiLinearly-gradedsurface-dopedSOILDMOSFETwithrecessedsource2000(05)29.MatsudaiT.NakagawaASimulationofa700VhighvoltagedevicestructureonathinSOI199230.AkioNakagawa.NorioYasuharaBreakdownVoltageEnhancementforDevicesonThinSiliconLayer/SiliconDioxideFilm[外文期刊]1991(07)31.YSHuang.BJBaligaHighvoltagesilicon-on-insulator(SOI)MOSFETs199132.KimI.MatsumotoSBreakdownvoltageimprovementforthin-filmSOIpowerMOSFETsbyaburiedoxidestepstructure1994(05)33.Hyung-KyuLim.JerryGfossumThresholdVoltageofThin-FilmSilicon-on-insulatorMOSFETs1983(10)34.Jwin-YenGuo.Ching-yuanWuAnew2DanalyticthresholdvoltagemodelforfullydepletedshortchannelS0IMOSFETs1993(09)35.BannaSrinivasa.ChanCHThresholdVoltageModelforDeepSubmicrometerFullyDepletedSOIMOSFETs1995(11)36.HalleweynN.TiemeijerL.RedmanWhiteChargeModelforSOILDMOSTwithLateralDopingGradient200137.VPO'Neil.PGAlonasRelationshipbetweenoxidethicknessandthebreakdownvoltageofaplanarjunctionwithfieldreliefelectrode1979(09)38.ARusu.CBuluceaDeep-depletionbreakdownvoltageofsilicondioxide/siliconMOScapacitors1979(02)39.SMSzePhysicsofSemiconductorDevices198140.IL-JungKim.SatoshiMatsumotoAnalyticalapproachtobreakdownvoltagesinthin-filmSOIpowerMOSFETs1996(01)41.AVandooren.SCristoloveanu.JFConleyAsystematicinvestigationofthedegradationmechanismsinSOIn-channelLDMOSFETs2003(10)42.JGFiorenza.JAdelAlamoExperimentalComparisonofRFpowerLDMOSFETsonthin-filmSOIandbulksilicon[外文期刊]2002(04)本文链接：